2018 4th International Conference on Devices, Circuits and Systems (ICDCS)最新文献_第3页

Investigation of Gate All Around Junctionless Nanowire Transistor with Arbitrary Polygonal Cross Section 任意多边形截面栅极无结纳米线晶体管的研究

2018 4th International Conference on Devices, Circuits and Systems (ICDCS) Pub Date : 2018-03-01 DOI: 10.1109/ICDCSYST.2018.8605133

Monika Sharma, Mridula Gupta, R. Narang, M. Saxena

引用次数: 4

A 3-Port Y-Junction Power Splitter for 60GHz Applications 用于60GHz应用的3端口y结功率分配器

2018 4th International Conference on Devices, Circuits and Systems (ICDCS) Pub Date : 2018-03-01 DOI: 10.1109/ICDCSYST.2018.8605176

K. Kumar, T. Shanmuganantham

{"title":"A 3-Port Y-Junction Power Splitter for 60GHz Applications","authors":"K. Kumar, T. Shanmuganantham","doi":"10.1109/ICDCSYST.2018.8605176","DOIUrl":"https://doi.org/10.1109/ICDCSYST.2018.8605176","url":null,"abstract":"In this research paper, Y-Junction power splitter is designed for 60GHz in the millimeter wave frequency range for upcoming new technologies in wireless and wire communications. Y-Junction power splitter is designed by using rectangular substrate integrated waveguide technology with grounded coplanar waveguide technique is used as transmission path. Rogers RT/Duriod 5880 Substrate material is used to design Y-Junction power splitter with loss tangent as 0.0009 and dielectric constant 2.2. This Y-Junction power splitter analyzed the characteristic like reflection coefficient, voltage standing wave ratio and electric fields. This Y-Junction power splitter gives max reflection coefficient of -50dB at 60.1GHz, voltage standing wave ratio of 1.02 and transmission coefficient as -3.39dB at 60GHz. This Y-Junction power splitter gives 2. 32GHz as bandwidth. Dimensions of the Y-Junction power splitter are $6.8^{star }6^{star }0.508mathrm {m}mathrm {m}^{3}$. Due to its reflection coefficient, dimensions, transmission coefficient and bandwidth this power splitter is suitable for V-band millimeter wave applications like Wireless LAN and RADAR applications for what today’s need of society.","PeriodicalId":175583,"journal":{"name":"2018 4th International Conference on Devices, Circuits and Systems (ICDCS)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132200153","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Nonlinear Electron Transport Mobility in GaAs/Al x Ga1-x As Square - Parabolic Double Quantum Well MODFET Structure GaAs/Al x Ga1-x As平方-抛物双量子阱MODFET结构中的非线性电子输运迁移率

2018 4th International Conference on Devices, Circuits and Systems (ICDCS) Pub Date : 2018-03-01 DOI: 10.1109/ICDCSYST.2018.8605171

N. Sahoo, T. Sahu, A. K. Panda

{"title":"Nonlinear Electron Transport Mobility in GaAs/Al x Ga1-x As Square - Parabolic Double Quantum Well MODFET Structure","authors":"N. Sahoo, T. Sahu, A. K. Panda","doi":"10.1109/ICDCSYST.2018.8605171","DOIUrl":"https://doi.org/10.1109/ICDCSYST.2018.8605171","url":null,"abstract":"We study doping dependence nonlinear electron transport mobility $mu _{t}$ in a GaAslAlxGal-x4s double quantum well MODFET structure. We consider square (parabolic) well towards the substrate (surface) side of the structure. The side barrier towards the substrate (surface) is modulation delta doped with Si of doping concentration $Nd_{sub}(Nd_{sur})$. We analyze $mu _{t}$ as function of $Nd_{sub}$ (keeping $Nd_{sur}$ constant) by considering different scattering mechanisms such as: ionized impurity (Imp-), alloy disorder (Al-) and interface roughness $(Ir-)$. We show that $mu _{t}$ is mainly decided by $mu i^{mp}$ whereas $mu i^{r}$ reduces the overall $mu _{t}$. We also show that nonlinear $mu _{t}$ can be achieved during double subband occupancy and attain minimum at the anticrossing of subband states which occur for $Nd_{sub} lt Nd_{sur}$. There is also a sudden enhancement $ofmu _{t}$ due to the cease of intersubband effects at $(Nd_{sub})_{trans}$ where double to single subband occupancy takes place. It is gratifying to show that increasing well width $w$ enhances $mu _{t}$ as well as transition from double to single occur for higher value of $(Nd_{sub})_{trms}$. Our results can be utilized for the analysis of improvement of channel conductivity of double quantum well MODFET structure.","PeriodicalId":175583,"journal":{"name":"2018 4th International Conference on Devices, Circuits and Systems (ICDCS)","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130511034","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

GAA-CNTFET based Single/Dual-Channel and Single/Dual-Chirality digital gates for High Speed and Low Power Application 基于GAA-CNTFET的单/双通道和单/双手性数字门，用于高速低功耗应用

2018 4th International Conference on Devices, Circuits and Systems (ICDCS) Pub Date : 2018-03-01 DOI: 10.1109/ICDCSYST.2018.8605137

Singh Rohitkumar Shailendra, V. N. Ramakrishnan

引用次数: 0

Analysis of Dynamic Models of a STT-MRAM STT-MRAM的动力学模型分析

2018 4th International Conference on Devices, Circuits and Systems (ICDCS) Pub Date : 2018-03-01 DOI: 10.1109/ICDCSYST.2018.8605161

Bettymol Mathew, N. M. Siva Mangai

引用次数: 0

A FAM-2D RLS based smart Massive MIMO system 基于FAM-2D RLS的智能大规模MIMO系统

2018 4th International Conference on Devices, Circuits and Systems (ICDCS) Pub Date : 2018-03-01 DOI: 10.1109/ICDCSYST.2018.8605128

Arun Joy, Athira jess, Irin Sajan, Priscilla Grace

引用次数: 0

RF Performance comparison of Dual Material Gate (DMG) and Conventional AlGaN/GaN High Electron Mobility Transistor 双材料栅极(DMG)与传统AlGaN/GaN高电子迁移率晶体管的射频性能比较

2018 4th International Conference on Devices, Circuits and Systems (ICDCS) Pub Date : 2018-03-01 DOI: 10.1109/ICDCSYST.2018.8605122

Nisha Chugh, Manoj Kumar, M. Bhattacharya, R. Gupta

引用次数: 2

Design and Study of Memristor based Non-autonomous Chua's circuit 基于非自治蔡氏电路的忆阻器设计与研究

2018 4th International Conference on Devices, Circuits and Systems (ICDCS) Pub Date : 2018-03-01 DOI: 10.1109/ICDCSYST.2018.8605075

T. S. Ghouse Basha, I. R. Mohamed, A. Chithra

引用次数: 1

Design of Chopper Stabilized Preamplifier for ECG monitoring System 心电监测系统斩波稳定前置放大器的设计

2018 4th International Conference on Devices, Circuits and Systems (ICDCS) Pub Date : 2018-03-01 DOI: 10.1109/ICDCSYST.2018.8605168

A. Uma, C. Selvagangai, P. Kalpana

引用次数: 2

A Low-Power High Linear RF Mixer for 2.4GHz Low-Rate WPAN Applications 一种用于2.4GHz低速率WPAN应用的低功耗高线性射频混频器

2018 4th International Conference on Devices, Circuits and Systems (ICDCS) Pub Date : 2018-03-01 DOI: 10.1109/ICDCSYST.2018.8605165

S. Gladson, K. Alekhya, M. Bhaskar

{"title":"A Low-Power High Linear RF Mixer for 2.4GHz Low-Rate WPAN Applications","authors":"S. Gladson, K. Alekhya, M. Bhaskar","doi":"10.1109/ICDCSYST.2018.8605165","DOIUrl":"https://doi.org/10.1109/ICDCSYST.2018.8605165","url":null,"abstract":"The IEEE 802.15.4 Low-Rate Wireless Personal Area Network (LR-WPAN) standard dictates stringent requirements on performance and cost. The standard is designed to cover a small area of coverage (10m), within the personal accessible space of the user. The LR-WPAN systems must be smaller in size to fit in the accessible area and also must be able to communicate with other wireless systems nearby, thus creating a wireless personal area network for the user. This personal communication network is the base for the Internet-of-Things (IoT) applications. These wireless systems must be of low cost and also provide the highest quality of performance to the user. A low cost chip poses the challenge of reduction in the area of the Silicon chip without affecting the performance of the system. This challenge is addressed in this paper by introducing a low cost, low-power, high-performance mixer for the LR-WPAN application. The proposed mixer circuit employs bulk biasing and active degeneration for linearity improvement. The analysis of the circuit for the gain and linearity is given for the understanding of the circuit operation. The mixer is designed and implemented in 180nm UMC CMOS technology using Cadence SpectreRF tool with probe pads for bare die measurement. The mixer offers a conversion gain of 15. 08dB with the output referred third-order intercept point (OIP3) at 21. 28dBm and a single-sideband (SSB) noise figure (NF) of 14.01dB. The performance is achieved by consuming only 3. 52mW of power from a 1. 8V supply. The Figure-of-Merit is calculated for performance comparison, and it is found to be better than some of the other mixer circuits reported in the literature. The proposed mixer circuit occupies a core area of 23.98 μm × 49.95 μm without the power rails and the probe pads.","PeriodicalId":175583,"journal":{"name":"2018 4th International Conference on Devices, Circuits and Systems (ICDCS)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129026560","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1