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2018 4th International Conference on Devices, Circuits and Systems (ICDCS)最新文献

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Two Dimensional Analytical Potential Model for Double Gate TFETs 双栅tfet的二维解析电位模型
2018 4th International Conference on Devices, Circuits and Systems (ICDCS) Pub Date : 2018-03-01 DOI: 10.1109/ICDCSYST.2018.8605141
N. Nithin Kumar, P. Vimala
{"title":"Two Dimensional Analytical Potential Model for Double Gate TFETs","authors":"N. Nithin Kumar, P. Vimala","doi":"10.1109/ICDCSYST.2018.8605141","DOIUrl":"https://doi.org/10.1109/ICDCSYST.2018.8605141","url":null,"abstract":"This paper presents a 2D analytical surface potential model and lateral electric field for undoped double gate (DG) tunnel field effect transistors (TFETs). With suitable boundary condition 2D Poisson’s equation is solved by using superposition method. The Surface potential and lateral electric field is modeled by considering mobile charges. The analytical results of the proposed model have been compared with the Silvaco TCAD atlas results. The proposed results are in excellent agreement with the simulation results and having higher performance in small dimensions.","PeriodicalId":175583,"journal":{"name":"2018 4th International Conference on Devices, Circuits and Systems (ICDCS)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133109551","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
1x4 and 1x8 Photonic crystal ring resonator based Optical Splitters 基于1x4和1x8光子晶体环形谐振器的分光器
2018 4th International Conference on Devices, Circuits and Systems (ICDCS) Pub Date : 2018-03-01 DOI: 10.1109/ICDCSYST.2018.8605126
M. Rakshitha, S. Gandhi
{"title":"1x4 and 1x8 Photonic crystal ring resonator based Optical Splitters","authors":"M. Rakshitha, S. Gandhi","doi":"10.1109/ICDCSYST.2018.8605126","DOIUrl":"https://doi.org/10.1109/ICDCSYST.2018.8605126","url":null,"abstract":"In this paper, 2 dimensional (2-D) photonic crystal ring resonator based lx4 and lx8 optical power splitters have been designed and analysed. By using ring resonators and waveguides, the splitter is designed which has nearly equal power at each of the output ports. This equal output power at the output ports are obtained due to the symmetrical structure. Plane wave expansion method is used to calculate the Photonic Bandgap of the structure. FDTD method is used for design, simulation and analysation of the structure. The structure is designed using square lattice with $25times 43$ rods in x-z direction and hence the structure is ultra-compact with an area of $313.2mu m^{2}.$","PeriodicalId":175583,"journal":{"name":"2018 4th International Conference on Devices, Circuits and Systems (ICDCS)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126913442","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
DC Performance analysis of AlGaN/GaN HEMT for future High power applications 未来大功率应用中AlGaN/GaN HEMT的直流性能分析
2018 4th International Conference on Devices, Circuits and Systems (ICDCS) Pub Date : 2018-03-01 DOI: 10.1109/ICDCSYST.2018.8605071
Pratik P Pandit, L. Arivazhagan, P. Prajoon, J. Rajkumar, J. Ajayan, D. Nirmal
{"title":"DC Performance analysis of AlGaN/GaN HEMT for future High power applications","authors":"Pratik P Pandit, L. Arivazhagan, P. Prajoon, J. Rajkumar, J. Ajayan, D. Nirmal","doi":"10.1109/ICDCSYST.2018.8605071","DOIUrl":"https://doi.org/10.1109/ICDCSYST.2018.8605071","url":null,"abstract":"In this work, we analyzed the DC performance of asymmetric AlGaN/GaN High Electron Mobility Transistors (HEMTs) on SiC substarte using Silvaco-TCAD software. The highlights of the proposed HEMT are intrinsic GaN channel, AlN nucleation layer, AIGaN barrier layer and asymmetric gate technology and GaN cap layer. The $mathrm {L}_{mathrm {g}} = 50$ nm proposed HEMT on SiC substrate exhibits a $mathrm {g}_{mathrm {m}_{-}max }$ of 170 mS/mm and $mathrm {I}_{mathrm {D}mathrm {S}_{-}max }$ of 800 mA/mm and breakdown voltage of 550 V. The proposed HEMT on SiC substrate exhibits a threshold voltage of -5V which indicates its D-Mode operation of the device. This excellent DC and breakdown characteristics of the proposed HEMT makes them an excellent candidate for future high power and high frequency applications.","PeriodicalId":175583,"journal":{"name":"2018 4th International Conference on Devices, Circuits and Systems (ICDCS)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133362731","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Radio Frequency Identification and Sensor Networks based Bin Level Monitoring Systems-A Review 基于射频识别和传感器网络的液位监测系统综述
2018 4th International Conference on Devices, Circuits and Systems (ICDCS) Pub Date : 2018-03-01 DOI: 10.1109/ICDCSYST.2018.8605153
S. Ramson, Deepthi Bhavanam, Srirupa Draksharam, Ranjeet Kumar, D. Moni, A. Kirubaraj
{"title":"Radio Frequency Identification and Sensor Networks based Bin Level Monitoring Systems-A Review","authors":"S. Ramson, Deepthi Bhavanam, Srirupa Draksharam, Ranjeet Kumar, D. Moni, A. Kirubaraj","doi":"10.1109/ICDCSYST.2018.8605153","DOIUrl":"https://doi.org/10.1109/ICDCSYST.2018.8605153","url":null,"abstract":"A variety of technologies provided solution for innumerable problems. But, still human wastes are handled by human beings. Solid waste management is the method of collecting, transporting, processing or dumping, managing and monitoring the waste materials. Radio Frequency Identification (RFID) and Wireless Sensor Networks (WSNs) plays a vital role in the field of solid waste management. A small number of RFID and WSNs based solid waste bin level monitoring systems have been deployed to handle solid wastes. This article presents the review of various bin level monitoring systems with the insight for advanced researches in the field of waste management.","PeriodicalId":175583,"journal":{"name":"2018 4th International Conference on Devices, Circuits and Systems (ICDCS)","volume":"89 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130871767","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Effects of Interface Charge (Qit) and Interface Trap Density (Dit) on A12O3, ZrO2 and HfO2 based Nano Regime Multi-Gate Devices 界面电荷(Qit)和界面阱密度(Dit)对A12O3、ZrO2和HfO2基纳米多栅极器件的影响
2018 4th International Conference on Devices, Circuits and Systems (ICDCS) Pub Date : 2018-03-01 DOI: 10.1109/ICDCSYST.2018.8605166
R. Thakur, Pragati Singh
{"title":"Effects of Interface Charge (Qit) and Interface Trap Density (Dit) on A12O3, ZrO2 and HfO2 based Nano Regime Multi-Gate Devices","authors":"R. Thakur, Pragati Singh","doi":"10.1109/ICDCSYST.2018.8605166","DOIUrl":"https://doi.org/10.1109/ICDCSYST.2018.8605166","url":null,"abstract":"As the technology has been scaling down very rapidly, it is becoming diflicult to isolate the oxide-semiconductor layer to prevent tunneling of carriers to the gate and thus the leakage is becoming a major threat in MOSFET based semiconductor devices for applications in the Nano Regime. In this paper, a method for having a good isolation between Si-SiO2has been shown by replacing the earlier SiO2With High-k. In this study, Hafnium Oxide (HfO2) and Zirconium Oxide (ZrO2) were found to be the good alternatives for Sifh.The device was simulated using Sentaurus TCAD and mathematical calculations were done using MATLAB.","PeriodicalId":175583,"journal":{"name":"2018 4th International Conference on Devices, Circuits and Systems (ICDCS)","volume":"71 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127376845","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Performance Analysis Of Metalloid Source/ Drain GaAs-FinFET For Analog/RF Applications 用于模拟/射频应用的金属状源极/漏极gaas finfet的性能分析
2018 4th International Conference on Devices, Circuits and Systems (ICDCS) Pub Date : 2018-03-01 DOI: 10.1109/ICDCSYST.2018.8605159
Yogesh Pratap, Reshma Sinha, Praveen Pal, Sarul Malik, S. Kabra, Sachin Kumar
{"title":"Performance Analysis Of Metalloid Source/ Drain GaAs-FinFET For Analog/RF Applications","authors":"Yogesh Pratap, Reshma Sinha, Praveen Pal, Sarul Malik, S. Kabra, Sachin Kumar","doi":"10.1109/ICDCSYST.2018.8605159","DOIUrl":"https://doi.org/10.1109/ICDCSYST.2018.8605159","url":null,"abstract":"In this paper, FinFET device with metalloid source/drain and GaAs channel has been proposed for Analog/RF Applications. Drain current, transconductance, intrinsic gain, device efficiency, cut-off frequency, and VIP3 has been analysed by using ATLAS 3D TCAD simulator. A comprehensive comparative analysis has been carried out between FinFET device with and without metalloid source/drain. The drastic enhancement in device performance makes Metalloid-S/D-GaAs FinFET as a ultimate novel device structure for high-frequency applications.","PeriodicalId":175583,"journal":{"name":"2018 4th International Conference on Devices, Circuits and Systems (ICDCS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128707432","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Novel Approach to Analyze Current-Voltage Characteristics of Double Gated-Memristor 一种分析双门忆阻器电流电压特性的新方法
2018 4th International Conference on Devices, Circuits and Systems (ICDCS) Pub Date : 2018-03-01 DOI: 10.1109/ICDCSYST.2018.8605149
H. M. Vijay, V. N. Ramakrishnan
{"title":"A Novel Approach to Analyze Current-Voltage Characteristics of Double Gated-Memristor","authors":"H. M. Vijay, V. N. Ramakrishnan","doi":"10.1109/ICDCSYST.2018.8605149","DOIUrl":"https://doi.org/10.1109/ICDCSYST.2018.8605149","url":null,"abstract":"Memristor is a nano-electronic device which relates charge and flux. It is an excellent candidate for emerging technologies. Memristor exits as either two- or three-terminal device. In this work, As far as we know to the best of our knowledge we are for the first time proposing four terminal memristor known as double gated memristor. The structure of the double gated memristor resembles double gate MOSFET. The current-voltage analysis of double gated memristor is carried out in this paper work. It is observed that there is an improvement in the current of the double gated memristor in comparison to conventional memristor. It finds important application in analog, digital and neuromorphic circuits.","PeriodicalId":175583,"journal":{"name":"2018 4th International Conference on Devices, Circuits and Systems (ICDCS)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125737671","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Slotted Antenna Deign For GPS Applications Using Feko Software 利用Feko软件设计GPS应用的开槽天线
2018 4th International Conference on Devices, Circuits and Systems (ICDCS) Pub Date : 2018-03-01 DOI: 10.1109/ICDCSYST.2018.8605068
T. A. Jones, Vidhya Priyadarshni, Angelin Esther, R. Sowjanya, Ranso
{"title":"Slotted Antenna Deign For GPS Applications Using Feko Software","authors":"T. A. Jones, Vidhya Priyadarshni, Angelin Esther, R. Sowjanya, Ranso","doi":"10.1109/ICDCSYST.2018.8605068","DOIUrl":"https://doi.org/10.1109/ICDCSYST.2018.8605068","url":null,"abstract":"In recent years development of miniaturized patch antenna for quality application plays an important role. This paper presents the planning of rectangular microstrip antenna with 2 completely different slots appropriate for future Global Positioning System(GPS). The planned antenna operates at frequency at L1 (1.559 GHz-1.610GHz). The designs are based on an equivalent patch dimensions loaded with 2 completely different slots of U-shaped slot and inverted H-Shaped slot. The experimental results show that this style is ideally fitted to GPS mobile communications. Simulation are done using FEKO software.","PeriodicalId":175583,"journal":{"name":"2018 4th International Conference on Devices, Circuits and Systems (ICDCS)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121513537","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Decision Support System for Heart Disease Diagnosis Using Interval Vague Set and Fuzzy Association Rule Mining 基于区间模糊集和模糊关联规则挖掘的心脏病诊断决策支持系统
2018 4th International Conference on Devices, Circuits and Systems (ICDCS) Pub Date : 2018-03-01 DOI: 10.1109/ICDCSYST.2018.8605065
P. Umasankar, V. Thiagarasu
{"title":"Decision Support System for Heart Disease Diagnosis Using Interval Vague Set and Fuzzy Association Rule Mining","authors":"P. Umasankar, V. Thiagarasu","doi":"10.1109/ICDCSYST.2018.8605065","DOIUrl":"https://doi.org/10.1109/ICDCSYST.2018.8605065","url":null,"abstract":"The most common death is due to the condition that affects the heart is Cardiovascular disease (CVD). The inadequate oxygen to the heart leads to the symptoms like fatigue and chest pain (angina). This paper proposes a framework which incorporates the pre-processing step, Interval Vague set, Fuzzy Association Rule mining and Fuzzy Correlation rule mining for the decision making process. In this paper, the proposed framework mainly focused on the criteria that are causing the heart attack among the people. The pre-processing step is used to reduce the size of the heart disease dataset. Using the Rule Mining algorithm, the set of rules are generated for the prediction of heart diseases based on the selected criteria. Interval vague set is used to solve the decision making problem among the doctors regarding the heart disease among the patient who are in the hesitant state.","PeriodicalId":175583,"journal":{"name":"2018 4th International Conference on Devices, Circuits and Systems (ICDCS)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116768784","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Synthesis of Broadband IF and RF Impedances under Multi-sine Stimuli 多正弦激励下宽带中频和射频阻抗的合成
2018 4th International Conference on Devices, Circuits and Systems (ICDCS) Pub Date : 2018-02-17 DOI: 10.1109/ICDCSYST.2018.8605140
M. Chaudhary
{"title":"Synthesis of Broadband IF and RF Impedances under Multi-sine Stimuli","authors":"M. Chaudhary","doi":"10.1109/ICDCSYST.2018.8605140","DOIUrl":"https://doi.org/10.1109/ICDCSYST.2018.8605140","url":null,"abstract":"This paper presents a novel RF load pull test setup that allows for the presentation of user specified impedances at both the RF (Radio frequency) and IF (intermediate frequency) domain, to enable the investigation of linear high efficiency power amplifier design using measurement data. The RF load pull impedances at the fundamental, and second harmonic were set to produce a derivative of a class J amplifier to emulate a high efficiency mode of operation. The IF impedance up to the fifth IF product was then varied to quantify its effect on linearity. To enable this investigation a multi-sine stimuli was synthesized using multiple signal sources all phase locked to reference local oscillator. It was found that a greater than 10dB improvement in linearity was achieved by actively injecting a signal at IF that can be applied in an envelope tracking system.","PeriodicalId":175583,"journal":{"name":"2018 4th International Conference on Devices, Circuits and Systems (ICDCS)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-02-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115812560","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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