Effects of Interface Charge (Qit) and Interface Trap Density (Dit) on A12O3, ZrO2 and HfO2 based Nano Regime Multi-Gate Devices

As the technology has been scaling down very rapidly, it is becoming diflicult to isolate the oxide-semiconductor layer to prevent tunneling of carriers to the gate and thus the leakage is becoming a major threat in MOSFET based semiconductor devices for applications in the Nano Regime. In this paper, a method for having a good isolation between Si-SiO2has been shown by replacing the earlier SiO2With High-k. In this study, Hafnium Oxide (HfO2) and Zirconium Oxide (ZrO2) were found to be the good alternatives for Sifh.The device was simulated using Sentaurus TCAD and mathematical calculations were done using MATLAB.