{"title":"用于模拟/射频应用的金属状源极/漏极gaas finfet的性能分析","authors":"Yogesh Pratap, Reshma Sinha, Praveen Pal, Sarul Malik, S. Kabra, Sachin Kumar","doi":"10.1109/ICDCSYST.2018.8605159","DOIUrl":null,"url":null,"abstract":"In this paper, FinFET device with metalloid source/drain and GaAs channel has been proposed for Analog/RF Applications. Drain current, transconductance, intrinsic gain, device efficiency, cut-off frequency, and VIP3 has been analysed by using ATLAS 3D TCAD simulator. A comprehensive comparative analysis has been carried out between FinFET device with and without metalloid source/drain. The drastic enhancement in device performance makes Metalloid-S/D-GaAs FinFET as a ultimate novel device structure for high-frequency applications.","PeriodicalId":175583,"journal":{"name":"2018 4th International Conference on Devices, Circuits and Systems (ICDCS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Performance Analysis Of Metalloid Source/ Drain GaAs-FinFET For Analog/RF Applications\",\"authors\":\"Yogesh Pratap, Reshma Sinha, Praveen Pal, Sarul Malik, S. Kabra, Sachin Kumar\",\"doi\":\"10.1109/ICDCSYST.2018.8605159\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, FinFET device with metalloid source/drain and GaAs channel has been proposed for Analog/RF Applications. Drain current, transconductance, intrinsic gain, device efficiency, cut-off frequency, and VIP3 has been analysed by using ATLAS 3D TCAD simulator. A comprehensive comparative analysis has been carried out between FinFET device with and without metalloid source/drain. The drastic enhancement in device performance makes Metalloid-S/D-GaAs FinFET as a ultimate novel device structure for high-frequency applications.\",\"PeriodicalId\":175583,\"journal\":{\"name\":\"2018 4th International Conference on Devices, Circuits and Systems (ICDCS)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-03-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 4th International Conference on Devices, Circuits and Systems (ICDCS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICDCSYST.2018.8605159\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 4th International Conference on Devices, Circuits and Systems (ICDCS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICDCSYST.2018.8605159","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
摘要
本文提出了一种具有金属状源/漏极和GaAs通道的FinFET器件，用于模拟/射频应用。利用ATLAS 3D TCAD模拟器对漏极电流、跨导、固有增益、器件效率、截止频率和VIP3进行了分析。对具有和不具有类金属源极/漏极的FinFET器件进行了全面的比较分析。器件性能的急剧提高使Metalloid-S/D-GaAs FinFET成为高频应用的终极新型器件结构。
Performance Analysis Of Metalloid Source/ Drain GaAs-FinFET For Analog/RF Applications
In this paper, FinFET device with metalloid source/drain and GaAs channel has been proposed for Analog/RF Applications. Drain current, transconductance, intrinsic gain, device efficiency, cut-off frequency, and VIP3 has been analysed by using ATLAS 3D TCAD simulator. A comprehensive comparative analysis has been carried out between FinFET device with and without metalloid source/drain. The drastic enhancement in device performance makes Metalloid-S/D-GaAs FinFET as a ultimate novel device structure for high-frequency applications.
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