Performance Analysis Of Metalloid Source/ Drain GaAs-FinFET For Analog/RF Applications

Abstract

In this paper, FinFET device with metalloid source/drain and GaAs channel has been proposed for Analog/RF Applications. Drain current, transconductance, intrinsic gain, device efficiency, cut-off frequency, and VIP3 has been analysed by using ATLAS 3D TCAD simulator. A comprehensive comparative analysis has been carried out between FinFET device with and without metalloid source/drain. The drastic enhancement in device performance makes Metalloid-S/D-GaAs FinFET as a ultimate novel device structure for high-frequency applications.