DC Performance analysis of AlGaN/GaN HEMT for future High power applications

Abstract

In this work, we analyzed the DC performance of asymmetric AlGaN/GaN High Electron Mobility Transistors (HEMTs) on SiC substarte using Silvaco-TCAD software. The highlights of the proposed HEMT are intrinsic GaN channel, AlN nucleation layer, AIGaN barrier layer and asymmetric gate technology and GaN cap layer. The $\mathrm {L}_{\mathrm {g}} = 50$ nm proposed HEMT on SiC substrate exhibits a $\mathrm {g}_{\mathrm {m}_{-}\max }$ of 170 mS/mm and $\mathrm {I}_{\mathrm {D}\mathrm {S}_{-}\max }$ of 800 mA/mm and breakdown voltage of 550 V. The proposed HEMT on SiC substrate exhibits a threshold voltage of -5V which indicates its D-Mode operation of the device. This excellent DC and breakdown characteristics of the proposed HEMT makes them an excellent candidate for future high power and high frequency applications.