Two Dimensional Analytical Potential Model for Double Gate TFETs

Abstract

This paper presents a 2D analytical surface potential model and lateral electric field for undoped double gate (DG) tunnel field effect transistors (TFETs). With suitable boundary condition 2D Poisson’s equation is solved by using superposition method. The Surface potential and lateral electric field is modeled by considering mobile charges. The analytical results of the proposed model have been compared with the Silvaco TCAD atlas results. The proposed results are in excellent agreement with the simulation results and having higher performance in small dimensions.