RF Performance comparison of Dual Material Gate (DMG) and Conventional AlGaN/GaN High Electron Mobility Transistor

This paper presents a simulation based analysis of the RF performance of dual material gate (DMG) AlGaN/GaN HEMT and its performance is compared with that of Single Material Gate (SMG) AlGaN/GaN HEMT by using two-dimensional ATLAS TCAD device simulation. The simulation results demonstrate that the DMG HEMT exhibits much higher drain current, higher transconductance, higher cut-off frequency as compared to the conventional HEMT due to improved velocity of carriers in the channel and reduced SCEs. Also, an improvement in carrier transport efficiency is achieved by the uniform electric field along the channel. This Tuning of DMG HEMT in terms of the different gate-source voltage and drain voltage has been carried out to enhance the drive current, transconductance and the cut-off frequency illustrating the superior performance of DMG HEMT as compared to SMG HEMT for future high speed, microwave, digital and analog applications.