2018 4th International Conference on Devices, Circuits and Systems (ICDCS)最新文献_第2页

Overview of Current Compliance Effect on Reliability of Nano Scaled Metal Oxide Resistive Random Access Memory Device 电流顺应性对纳米级金属氧化物电阻随机存取存储器可靠性影响的综述

2018 4th International Conference on Devices, Circuits and Systems (ICDCS) Pub Date : 2018-03-16 DOI: 10.1109/ICDCSYST.2018.8605178

A. Napolean, N. M. Sivamangai, Joel Samuel, Vimukth John

引用次数: 5

Pulsed Laser Deposited Molybdenum Oxides (MoO3 & MoO2) Thin Films for Nanoelectronics Device Application 脉冲激光沉积氧化钼(MoO3 & MoO2)薄膜在纳米电子器件中的应用

2018 4th International Conference on Devices, Circuits and Systems (ICDCS) Pub Date : 2018-03-16 DOI: 10.1109/ICDCSYST.2018.8605070

C. J., Ponmudi Selvan T., S. M., I. Sheebha, V. B, R. S.

{"title":"Pulsed Laser Deposited Molybdenum Oxides (MoO3 & MoO2) Thin Films for Nanoelectronics Device Application","authors":"C. J., Ponmudi Selvan T., S. M., I. Sheebha, V. B, R. S.","doi":"10.1109/ICDCSYST.2018.8605070","DOIUrl":"https://doi.org/10.1109/ICDCSYST.2018.8605070","url":null,"abstract":"Orthorhombic molybdenum trioxide (MoO3) and monoclinic molybdenum dioxide (MoO2) thin films were prepared using the pulsed laser deposition technique under the oxygen (O2) and Argon (Ar) processing gas atmospheres. The MoO3 samples were pulsed laser deposited over a range of deposition temperature, 303K to 873K at 10Hz in the O2 atmosphere. The characterisation of both the oxide thin films was studied using FESEM, XRD, UV-Visible spectroscopy, Hall measurement systems and linear sweep voltammetry. This deposition technique would be an effective deposition method for MoO3 and MoO2 thin films due to the fast, high quality, stoichiometric and eco-friendly process. The surface morphology dramatically changed by substrate deposition and deposition time at different temperatures. The samples were annealed at 673K and the properties were analysed. The neatly decorated nanostructures of 500 nm thick MoO3 and MoO2 are obtained for 12000 shots laser ablated samples and are then characterized. The IV characteristics, optical and electrical properties provide essential characteristics results for the potential nanoelectronics applications.","PeriodicalId":175583,"journal":{"name":"2018 4th International Conference on Devices, Circuits and Systems (ICDCS)","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121578404","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

A Low Power Dynamic Comparator For A 12-Bit Pipelined Successive Approximation Register (SAR) ADC 用于12位流水线逐次逼近寄存器(SAR) ADC的低功耗动态比较器

2018 4th International Conference on Devices, Circuits and Systems (ICDCS) Pub Date : 2018-03-16 DOI: 10.1109/ICDCSYST.2018.8605130

D. Shylu, S. Jasmine, D. Moni

引用次数: 5

Performance Study of Short Channel Symmetric Double Gate Gaussian Doped Ferroelectric FET for Analog and Digital Applications 用于模拟和数字应用的短通道对称双栅高斯掺杂铁电场效应管的性能研究

2018 4th International Conference on Devices, Circuits and Systems (ICDCS) Pub Date : 2018-03-01 DOI: 10.1109/ICDCSYST.2018.8605129

Hema Mehta, H. Kaur

引用次数: 0

Comparative analysis of MOSFET and STBFET based amplifier for analog application 基于MOSFET和stbet的模拟应用放大器的比较分析

2018 4th International Conference on Devices, Circuits and Systems (ICDCS) Pub Date : 2018-03-01 DOI: 10.1109/ICDCSYST.2018.8605174

B. Jain, K. K. Jha, M. Pattanaik

{"title":"Comparative analysis of MOSFET and STBFET based amplifier for analog application","authors":"B. Jain, K. K. Jha, M. Pattanaik","doi":"10.1109/ICDCSYST.2018.8605174","DOIUrl":"https://doi.org/10.1109/ICDCSYST.2018.8605174","url":null,"abstract":"In this work we have analyzed the impact of charge carrier’s injection mechanism on analog performance of amplifier. The present study is based on comparative analysis of two different FET based amplifiers i.e., Metal Oxide Semiconductor FET (MOSFET) amplifier and Sandwich Tunnel Barrier FET (STBFET) amplifier. The performance parameters for both the devices such as output characteristics, transfer characteristics, trans-conductance, output resistance, transconductance to drive current ratio, intrinsic gain, and unity gain cutoff frequency have been analyzed using numerical simulations. The analog performance of STBFET, which shows good drain current saturation, has been analyzed. Moreover its high trans-conductance to drive current ratio makes it suitable for high frequency applications. The output resistance of STBFET is found to be more than eight orders of magnitude higher than that for the MOSFET. Further STBFET based common source (CS) resistive load amplifier shows 2 to 3 times variations in amplification with variable load than that of MOSFET based amplifier. The qualitative analysis with variable input bias, oxide thickness and peak to peak swing is also reported.","PeriodicalId":175583,"journal":{"name":"2018 4th International Conference on Devices, Circuits and Systems (ICDCS)","volume":"80 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122271867","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Design of Voltage Amplifiers with optimization of Multiple Design Parameters 多设计参数优化的电压放大器设计

2018 4th International Conference on Devices, Circuits and Systems (ICDCS) Pub Date : 2018-03-01 DOI: 10.1109/ICDCSYST.2018.8605066

Patil Siddhant Vitthal, Amartya Basak, P. Mane

{"title":"Design of Voltage Amplifiers with optimization of Multiple Design Parameters","authors":"Patil Siddhant Vitthal, Amartya Basak, P. Mane","doi":"10.1109/ICDCSYST.2018.8605066","DOIUrl":"https://doi.org/10.1109/ICDCSYST.2018.8605066","url":null,"abstract":"In the current age of having sophisticated appliances with sophisticated circuits, it becomes necessary to have circuit designs that are exploited to their full potential by making minimal changes in their basic designs. Low Power, high gain, high voltage swing and stable operating voltage amplifiers are required at various stages in these appliances. Therefore, the paper focuses on improving designs that have two stages. The three designs, namely, the simple two stage operational amplifier, the two stage operational amplifier with cascoding in the inner stage and lead compensation, and the two stage operational amplifier with cascoding in the inner stage, lead compensation and gain boosting are compared. The circuits are designed and simulated using the GPDK045 and Analog Library in the Cadence Virtuoso Design Environment with Length of MOSFETs as 180nm and VDD as 2V. Out of the three methods, the two stage operational amplifier with cascoding in the inner stage and lead compensation is found to give the highest unity gain bandwidth of 1.1436 GHz and the method with gain boosting is found to give the highest DC Gain of 117.1087dB. The corresponding phase margin and power dissipation of the two methods are 57.8963 degrees, 57.3776 degrees and 0.69mW, 0.235mW.","PeriodicalId":175583,"journal":{"name":"2018 4th International Conference on Devices, Circuits and Systems (ICDCS)","volume":"93 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133750157","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A Novel on Microstrip Low Pass Filter for Elliptic Response 一种新型椭圆响应微带低通滤波器

2018 4th International Conference on Devices, Circuits and Systems (ICDCS) Pub Date : 2018-03-01 DOI: 10.1109/ICDCSYST.2018.8605160

S. K. Sriwas, Pramod Kumar

引用次数: 1

A Study on Transparent and Flexible Capacitor using Hybrid Zinc Oxide: Indium Tin Oxide and Silver as electrodes 以氧化锌、氧化铟锡和银为电极的透明柔性电容器的研究

2018 4th International Conference on Devices, Circuits and Systems (ICDCS) Pub Date : 2018-03-01 DOI: 10.1109/ICDCSYST.2018.8605134

S. Franklin, J. G. Jency

引用次数: 0

Comparative Study of CMOS based Dosimeters for Gamma Radiation 基于CMOS的伽马辐射剂量计的比较研究

2018 4th International Conference on Devices, Circuits and Systems (ICDCS) Pub Date : 2018-03-01 DOI: 10.1109/ICDCSYST.2018.8605158

Avashesh Dubey, Mridula Gupta, R. Narang, M. Saxena

引用次数: 5

Analysis of LBP and LOOP Based Textural Feature Extraction for the Classification of CT Lung Images 基于LBP和LOOP纹理特征提取的CT肺部图像分类分析

2018 4th International Conference on Devices, Circuits and Systems (ICDCS) Pub Date : 2018-03-01 DOI: 10.1109/ICDCSYST.2018.8605138

D. NarainPonraj, Esther Christy, A. G., S. G, Monica Sharu

{"title":"Analysis of LBP and LOOP Based Textural Feature Extraction for the Classification of CT Lung Images","authors":"D. NarainPonraj, Esther Christy, A. G., S. G, Monica Sharu","doi":"10.1109/ICDCSYST.2018.8605138","DOIUrl":"https://doi.org/10.1109/ICDCSYST.2018.8605138","url":null,"abstract":"Lung Cancer tops the list among all cancers. According to a study by IASLC (International Association For the study of Lung Cancer) it is found that more than 1.6 million deaths are witnessed every year due to Lung Cancer, which is more than the death rate caused by prostrate, colon and breast cancers combined. Thus there is a need for an early detection followed by early treatment in order to improve the patient's chance of survival. In this paper a Lung Cancer detection model is developed using image processing technique. This model involves three stages to detect the presence of cancer nodule which are preprocessing, feature extraction and classification. The extracted features classify the lung as normal or abnormal with the help of SVM classifier. In this paper we extract texture features using Local Optimal Oriented Pattern(LOOP) and classify them using K-fold cross validation technique. The results obtained are then compared to the results of various binary patterns-LBP(Local Binary Pattern),LBC(Local Binary Count) and LDP(Local Directional Pattern).","PeriodicalId":175583,"journal":{"name":"2018 4th International Conference on Devices, Circuits and Systems (ICDCS)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123977556","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 8