Comparative Study of CMOS based Dosimeters for Gamma Radiation

Abstract

In this paper, a quantitative comparison study of the CMOS based Double Gate RADFET, Gate All Around (GAA) RADFET, Junctionless Double Gate (JL-DG) RADFET dosimeter and their electrical performance has been carried out. Gamma radiation Model of Sentaurus 3D Device simulator has been used to investigate the trapping detrapping of electron hole due to the moderate dose radiation environment. The impact of the total dose on the threshold voltage and drain current has been addressed. The obtained results indicate improvement in the subthreshold parameters of JL DG RADFET as compared to the conventional DG RADFET and GAA RADFET dosimeter.