Comparative analysis of MOSFET and STBFET based amplifier for analog application

2018 4th International Conference on Devices, Circuits and Systems (ICDCS) Pub Date : 2018-03-01 DOI:10.1109/ICDCSYST.2018.8605174

B. Jain, K. K. Jha, M. Pattanaik

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Abstract

In this work we have analyzed the impact of charge carrier’s injection mechanism on analog performance of amplifier. The present study is based on comparative analysis of two different FET based amplifiers i.e., Metal Oxide Semiconductor FET (MOSFET) amplifier and Sandwich Tunnel Barrier FET (STBFET) amplifier. The performance parameters for both the devices such as output characteristics, transfer characteristics, trans-conductance, output resistance, transconductance to drive current ratio, intrinsic gain, and unity gain cutoff frequency have been analyzed using numerical simulations. The analog performance of STBFET, which shows good drain current saturation, has been analyzed. Moreover its high trans-conductance to drive current ratio makes it suitable for high frequency applications. The output resistance of STBFET is found to be more than eight orders of magnitude higher than that for the MOSFET. Further STBFET based common source (CS) resistive load amplifier shows 2 to 3 times variations in amplification with variable load than that of MOSFET based amplifier. The qualitative analysis with variable input bias, oxide thickness and peak to peak swing is also reported.

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基于MOSFET和stbet的模拟应用放大器的比较分析

本文分析了载流子注入机制对放大器模拟性能的影响。本研究是基于比较分析两种不同的FET放大器，即金属氧化物半导体FET (MOSFET)放大器和夹层隧道势垒FET (STBFET)放大器。通过数值模拟分析了两种器件的输出特性、转移特性、跨导、输出电阻、跨导驱动电流比、本征增益和单位增益截止频率等性能参数。分析了stbet具有良好漏极电流饱和特性的模拟性能。此外，它的高跨导驱动电流比使其适合于高频应用。stfet的输出电阻比MOSFET高8个数量级以上。此外，基于stfet的共源电阻负载放大器在负载变化时的放大效果是基于MOSFET的放大器的2到3倍。定性分析变量输入偏置，氧化厚度和峰间摆动也报道。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2018 4th International Conference on Devices, Circuits and Systems (ICDCS)

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