2012 2nd IEEE CPMT Symposium Japan最新文献_第2页

Light-induced self-written waveguide for optoelectronic integration devices 光电集成器件用光致自写波导

2012 2nd IEEE CPMT Symposium Japan Pub Date : 2012-12-01 DOI: 10.1109/ICSJ.2012.6523385

T. Yamashita, D. Inoue, A. Kawasaki, O. Watanabe, M. Kagami

引用次数: 0

Ultracompact 4×3.4 Gbps optoelectronic package for an active optical HDMI cable 超紧凑4×3.4 Gbps光电封装，用于有源光学HDMI电缆

2012 2nd IEEE CPMT Symposium Japan Pub Date : 2012-12-01 DOI: 10.1109/ICSJ.2012.6523412

N. Schlepple, M. Nishigaki, H. Uemura, H. Furuyama, Y. Sugizaki, H. Shibata, Y. Koike

引用次数: 4

Heterogeneous 3D Stacking technology developments in ASET ASET中异构三维叠加技术的发展

2012 2nd IEEE CPMT Symposium Japan Pub Date : 2012-12-01 DOI: 10.1109/ICSJ.2012.6523453

H. Ikeda

引用次数: 2

Examination of insoluble anodes used for acid copper plating 酸性镀铜用不溶性阳极的检验

2012 2nd IEEE CPMT Symposium Japan Pub Date : 2012-12-01 DOI: 10.1109/ICSJ.2012.6523428

H. Hagiwara

引用次数: 0

Analysis of inter-channel crosstalk in multi-mode parallel optical waveguide using Beam Propagation Method 用光束传播法分析多模平行光波导的通道间串扰

2012 2nd IEEE CPMT Symposium Japan Pub Date : 2012-12-01 DOI: 10.1109/ICSJ.2012.6523386

Takuya Kudo, T. Ishigure

引用次数: 2

Thermal and electric conductive analysis in Isotropic Conductive Adhesive by modeling 3D fillers dispersion observed by FIB-SEM 利用FIB-SEM观察到的三维填料分布，模拟各向同性导电胶粘剂的导热和导电性

2012 2nd IEEE CPMT Symposium Japan Pub Date : 2012-12-01 DOI: 10.1109/ICSJ.2012.6523431

O. Arao, A. Shintai, A. Sugiura

引用次数: 0

Co-simulation of AC power noise of CMOS microprocessor using capacitor charging modeling 基于电容充电建模的CMOS微处理器交流电源噪声联合仿真

2012 2nd IEEE CPMT Symposium Japan Pub Date : 2012-12-01 DOI: 10.1109/ICSJ.2012.6523442

K. Yoshikawa, M. Nagata

引用次数: 1

A 25-Gbit/s high-speed optical-electrical printed circuit board for chip-to-chip optical interconnections 用于片对片光互连的25gbit /s高速光电印刷电路板

2012 2nd IEEE CPMT Symposium Japan Pub Date : 2012-12-01 DOI: 10.1109/ICSJ.2012.6523381

Y. Matsuoka, K. Adachi, Yong Lee, T. Ido

引用次数: 3

PDN characteristics of 3D-SiP with a wide-bus structure under 4k-IO operations 4g - io操作下宽总线结构3D-SiP的PDN特性

2012 2nd IEEE CPMT Symposium Japan Pub Date : 2012-12-01 DOI: 10.1109/ICSJ.2012.6523460

A. Sakai, S. Yamada, T. Kariya, S. Uchiyama, H. Ikeda, H. Fujita, H. Takatani, Y. Tanaka, Y. Oizono, Y. Nabeshima, T. Sudo

引用次数: 2

Effect of preformed Cu-Sn IMC layer on electromigration reliability of solder capped Cu pillar bump interconnection on an organic substrate 预成形Cu- sn IMC层对有机衬底上锡盖铜柱凸点互连电迁移可靠性的影响

2012 2nd IEEE CPMT Symposium Japan Pub Date : 2012-12-01 DOI: 10.1109/ICSJ.2012.6523394

Y. Orii, K. Toriyama, S. Kohara, H. Noma, K. Okamoto, K. Uenishi

{"title":"Effect of preformed Cu-Sn IMC layer on electromigration reliability of solder capped Cu pillar bump interconnection on an organic substrate","authors":"Y. Orii, K. Toriyama, S. Kohara, H. Noma, K. Okamoto, K. Uenishi","doi":"10.1109/ICSJ.2012.6523394","DOIUrl":"https://doi.org/10.1109/ICSJ.2012.6523394","url":null,"abstract":"The electromigration behavior of 80μm pitch solder capped Cu pillar bump interconnection on an organic carrier is studied and discussed. In 2011, the EM tests were performed on 80μm pitch solder capped Cu pillar bump interconnections and the effects of Ni barrier layers on the Cu pillars and the pre-formed intermetallic compound (IMC) layers on the EM tests were studied. The EM test conditions of the test vehicles were 7-10 kA/cm2 at 125-170°C. The Cu pillar height was 45μm and the solder height was 25μm. The solder composition was Sn-2.5Ag. Aged condition for pre-formed IMCs was 2,000 hours at 150°C. It was shown that the formation of the pre-formed IMC layers and the insertion of Ni barrier layers are effective in reducing the Cu atom dissolution. In this report, it is studied that which of the IMC layers, Cu3Sn or Cu6Sn5, is more effective in preventing the Cu atom dissolution. The cross-sectional analyses of the joints after the 2,000 hours of the test with 7kA/cm2 at 170°C were performed for this purpose. The relationship between the thickness of Cu3Sn IMC layer and the Cu migration is also studied by performing the current stress tests on the joints with controlled Cu3Sn IMC thicknesses. The samples were thermally aged prior to the tests at a higher temperature (200°C) and in a shorter time (10-50 hours) than the previous experiments. The cross-sectional analyses of the Sn-2.5Ag joints without pre-aging consisting mostly of Cu6Sn5, showed a significant Cu dissolution while the Cu dissolution was not detected for the pre-aged joints with thick Cu3Sn layers. A large number of Kirkendall voids were also observed in the joints without pre-aging. The current stress tests on the controlled Cu3Sn joints showed that Cu3Sn layer thickness of more than 1.5μm is effective in reducing Cu dissolution in the joints.","PeriodicalId":174050,"journal":{"name":"2012 2nd IEEE CPMT Symposium Japan","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115260513","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 4