2012 2nd IEEE CPMT Symposium Japan最新文献

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3D integration techniques using stacked PCBs and small dipole antenna for wireless sensor nodes 三维集成技术使用堆叠pcb和小型偶极子天线无线传感器节点
2012 2nd IEEE CPMT Symposium Japan Pub Date : 2012-12-01 DOI: 10.1109/ICSJ.2012.6523438
S. Oshima, K. Matsunaga, H. Morimura, M. Harada
{"title":"3D integration techniques using stacked PCBs and small dipole antenna for wireless sensor nodes","authors":"S. Oshima, K. Matsunaga, H. Morimura, M. Harada","doi":"10.1109/ICSJ.2012.6523438","DOIUrl":"https://doi.org/10.1109/ICSJ.2012.6523438","url":null,"abstract":"This paper describes an ultra-small wireless sensor node (WSN) with a solar battery for the 300-MHz band. In Japan, this band is regulated for extremely low-power wireless systems, require no license. To reduce the total size of the WSN, all elements, which are made of different materials, and their integration must be as small as possible. To realize an electrically small dipole antenna, we consider two methods: to mitigate the impedance decrease with an asymmetric structure, and to design a wireless IC to drive low impedance. We fabricated two types of WSNs consisting of a solar battery, charging capacitor, ultra-low-power pulse modulation wireless IC, electrically small-size dipole antenna, and vibration sensor. The WSNs are mounted on small printed circuit boards (PCBs) and the PCBs are stacked three-dimensionally to integrate devices made of different materials with reduced fabrication cost. As a result, the total volumes are reduced to 1-cm cubic with 1/10 wavelength λ of asymmetric dipole antenna and 5-mm cubic with 1/20 λ symmetric one. It achieves data transmission by only solar energy charged in capacitor.","PeriodicalId":174050,"journal":{"name":"2012 2nd IEEE CPMT Symposium Japan","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124779615","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Compact multi-fiber receptacle interface for on-board optical interconnection 紧凑的多光纤插座接口,用于板载光互连
2012 2nd IEEE CPMT Symposium Japan Pub Date : 2012-12-01 DOI: 10.1109/ICSJ.2012.6523408
K. Shikama, S. Asakawa, Y. Abe, S. Yanagi, J. Kobayashi, T. Takahashi
{"title":"Compact multi-fiber receptacle interface for on-board optical interconnection","authors":"K. Shikama, S. Asakawa, Y. Abe, S. Yanagi, J. Kobayashi, T. Takahashi","doi":"10.1109/ICSJ.2012.6523408","DOIUrl":"https://doi.org/10.1109/ICSJ.2012.6523408","url":null,"abstract":"We have developed a new type of receptacle interface that enables us to achieve dense multi-fiber connection between a planar lightwave circuit based optical device and single-mode fibers on a printed circuit board. To obtain both a small size and good optical performance with this interface we devised a small fiber guide for aligning the fibers with waveguides, and also developed a refractive-index-matching gel that maintains stable optical performance. We fabricated sufficiently small (5 mm long) 32-fiber interfaces, and successfully obtained low connection and high return losses with average values of 0.17 and 60 dB, respectively. We also demonstrated that the interface can provide sufficient environmental durability. Our new interface eliminates the need for pigtail fibers on the board, and this will lead to the development of dense and low-cost optical interconnection on a board for advanced optical network systems.","PeriodicalId":174050,"journal":{"name":"2012 2nd IEEE CPMT Symposium Japan","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129981939","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Fast life-time assessment of LED luminaries LED灯具的快速寿命评估
2012 2nd IEEE CPMT Symposium Japan Pub Date : 2012-12-01 DOI: 10.1109/ICSJ.2012.6523395
Daoguo Yang, M. Cai, Wenbin Chen, Zhen Zhang
{"title":"Fast life-time assessment of LED luminaries","authors":"Daoguo Yang, M. Cai, Wenbin Chen, Zhen Zhang","doi":"10.1109/ICSJ.2012.6523395","DOIUrl":"https://doi.org/10.1109/ICSJ.2012.6523395","url":null,"abstract":"The life-time assessment is becoming one of the major concerns for LED industry. It is highly requested to develop an effective and fast life-time qualification method to support and drive LED industry. In this paper, firstly an overview of the life-time assessment methods for LED products is conducted. A comparison has been made among the methods. Traditional constant stress accelerated test (CSAT) requires long test duration, with complication to select stress level, large sample size, high test cost and so on. The step stress accelerated test (SSAT) method has several advantages, such as suitable for long life field, short test time and few sample size, showing the potential for application to the reliability testing for LED products. Secondly, SSAT study was conducted on LED module and LED products. A design of experiments was performed based our preliminary SSAT results. Then a series of tests have been carried out. The effective accelerated degradation paths demonstrated that a fast life-time qualification procedure could be developed with step stress testing. Based on the test results, a step stress based fast life-time assessment approach is proposed for LED Products.","PeriodicalId":174050,"journal":{"name":"2012 2nd IEEE CPMT Symposium Japan","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131266222","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Development of human body communication transceiver based on impulse radio scheme 基于脉冲无线电方案的人体通信收发器的研制
2012 2nd IEEE CPMT Symposium Japan Pub Date : 2012-12-01 DOI: 10.1109/ICSJ.2012.6523440
K. Shikada, Jianqing Wang
{"title":"Development of human body communication transceiver based on impulse radio scheme","authors":"K. Shikada, Jianqing Wang","doi":"10.1109/ICSJ.2012.6523440","DOIUrl":"https://doi.org/10.1109/ICSJ.2012.6523440","url":null,"abstract":"IEEE 802.15.6 standard has defined the human body communication (HBC) as one of physical layers for wireless body area networks in healthcare, medical and entertainment applications. In this study, we developed an impulse radio (IR) type transceiver for HBC application. The basic structure was described and its communication performance were evaluated. The results show a sufficient feasibility to realize a HBC transmission at a data rate as high as 1.2 Mbps along the human body surface.","PeriodicalId":174050,"journal":{"name":"2012 2nd IEEE CPMT Symposium Japan","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132806892","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 17
Modeling and experiment on low voltage slow-light electro-absorption modulators for high-speed and low power consumption optical interconnect 高速低功耗光互连用低压慢光电吸收调制器的建模与实验
2012 2nd IEEE CPMT Symposium Japan Pub Date : 2012-12-01 DOI: 10.1109/ICSJ.2012.6523406
Syoki Shimizu, X. Gu, T. Shimada, A. Matsutani, F. Koyama
{"title":"Modeling and experiment on low voltage slow-light electro-absorption modulators for high-speed and low power consumption optical interconnect","authors":"Syoki Shimizu, X. Gu, T. Shimada, A. Matsutani, F. Koyama","doi":"10.1109/ICSJ.2012.6523406","DOIUrl":"https://doi.org/10.1109/ICSJ.2012.6523406","url":null,"abstract":"Optical interconnects offer significant advantages for future high performance computers and large scale data centers. The development of low-voltage and high-speed modulators would be a challenge for further increase of the link capacity with low power consumption. we present the modeling and the experiment toward ultra-low voltage (<;500mV) and small footprint (<;50mV) electro-absorption modulators. We fabricated Bragg reflector waveguide slow light modulators with GaInAs/GaAs QW electro-absorption. We present the modeling and the measurement on their static characteristics including their near-field patterns with different applied voltages. While extinction ratios are lower than the modeling, sub-volt modulation can be seen for miniature devices below 100μm. In addition, we calculated the power consumption by simple circuit of modulator. As a result, a possibility of low power consumption below 100fJ/bit is presented.","PeriodicalId":174050,"journal":{"name":"2012 2nd IEEE CPMT Symposium Japan","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129332495","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Sn-Ag-Cu-solder-reflow-capable 10-Gb/s × 4-channel very thin high-density parallel-optical modules 具有sn - ag - cu焊回流功能的10gb /s × 4通道超薄高密度并行光模块
2012 2nd IEEE CPMT Symposium Japan Pub Date : 2012-12-01 DOI: 10.1109/ICSJ.2012.6523409
K. Nagashima, Y. Ishikawa, H. Nasu
{"title":"Sn-Ag-Cu-solder-reflow-capable 10-Gb/s × 4-channel very thin high-density parallel-optical modules","authors":"K. Nagashima, Y. Ishikawa, H. Nasu","doi":"10.1109/ICSJ.2012.6523409","DOIUrl":"https://doi.org/10.1109/ICSJ.2012.6523409","url":null,"abstract":"In recent years, optical interconnects are attracting attention to achieve high-speed signal transmission in high-end routers, high-end servers, and high performance computing systems. In rack-to-rack applications, AOCs that have the same electrical interface as conventional electrical cables have been equipped in actual systems especially. On the other hand, board-to-board applications have been expected as the next-generation high-density optical interconnects supported by high-density mounting of parallel-optical modules nearby LSI. In order to meet both of demands, we developed 10-Gb/s × 4-channel parallel-optical modules that are capable to be mounted by Sn-Ag-Cu-solder-reflow process which is the most popular for handling other SMDs. The size of fabricated modules is as small as 12mm × 7.2mm × 1.5mm. We paid attention to minimize the thickness to realize a simple heat dissipation structure together with other SMDs. We achieved a very low height as same as 1.5mm in total. We tested transmission characteristics and achieved error-free transmission in back-to-back, OM2 of 100 m and OM3 of 100 m where a power-penalty is estimated to 1dB. Through experiments of transmitting all 4 channels simultaneously, we clarified that the modules have a sufficient jitter margin in all channel. And we verified Sn-Ag-Cu reflow temperature resistance of the modules based on JIS standard whose peak temperature is as high as 250°C (i.e., JIS C 60068-2-58). We evaluated output power variation in TX module and sensitivity variation in RX modules before and after test. Both optical power variation and sensitivity variation are less than ±10%. We also fabricated a small PCB whose edge is compliant with a standard QSFP+ connector and TX and RX modules are mounted a PCB through Sn-Ag-Cu-solder-reflow process. We performed primary reliability tests of temperature cycling, mechanical shock and vibration tests based on the specified conditions in Telcordia GR-468-CORE. As results, optical power and input sensitivity deviation are less than ±10% and transmission characteristics have no degradation in all tests.","PeriodicalId":174050,"journal":{"name":"2012 2nd IEEE CPMT Symposium Japan","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128587840","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Investigation on the mutual inductance of on-chip transformers 片上变压器互感特性的研究
2012 2nd IEEE CPMT Symposium Japan Pub Date : 2012-12-01 DOI: 10.1109/ICSJ.2012.6523471
H. Hsu, Sih-Han Lai, Meng-Syun Chen, Hsien-Feng Liao
{"title":"Investigation on the mutual inductance of on-chip transformers","authors":"H. Hsu, Sih-Han Lai, Meng-Syun Chen, Hsien-Feng Liao","doi":"10.1109/ICSJ.2012.6523471","DOIUrl":"https://doi.org/10.1109/ICSJ.2012.6523471","url":null,"abstract":"The behavior related to mutual inductance of on-chip transformer has been discussed comprehensively in this work, the characterization includes the low and high frequency performances. At low frequency, the analytical formula is developed to predict the mutual inductance based on GMD (geometry mean distance) approach. Moreover, the corresponding equivalent circuit is proposed to describe the high frequency characteristic. Adopting the model extraction based on the proposed circuit, the behavior of mutual inductance with opposite excitation of input signal especially in high frequency can be understood completely.","PeriodicalId":174050,"journal":{"name":"2012 2nd IEEE CPMT Symposium Japan","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115526577","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Effects of GaN blue LED chip and phosphor on optical performance of white light LED GaN蓝光LED芯片和荧光粉对白光LED光学性能的影响
2012 2nd IEEE CPMT Symposium Japan Pub Date : 2012-12-01 DOI: 10.1109/ICSJ.2012.6523414
Huishan Zhao, Changying Chen, S. W. R. Lee
{"title":"Effects of GaN blue LED chip and phosphor on optical performance of white light LED","authors":"Huishan Zhao, Changying Chen, S. W. R. Lee","doi":"10.1109/ICSJ.2012.6523414","DOIUrl":"https://doi.org/10.1109/ICSJ.2012.6523414","url":null,"abstract":"In this paper, the phosphor-converted white light LED was studied. Samples under investigation included various types of GaN blue LED chips and phosphor powders with different concentrations. Using an integrating sphere and spectrometer system, the effects of blue LED chips and phosphors on the optical performance of white light LED were analyzed comprehensively. From the experimental study, several conclusions could be drawn. The relationships between the radiant flux of the blue LED chip, the spectrum of the LED and the phosphor, and the optical performance of the resulting white light LED are discussed in detail in this paper.","PeriodicalId":174050,"journal":{"name":"2012 2nd IEEE CPMT Symposium Japan","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128212524","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Color Tuning dispense process to minimize color variation 调色过程,以减少颜色变化
2012 2nd IEEE CPMT Symposium Japan Pub Date : 2012-12-01 DOI: 10.1109/ICSJ.2012.6523415
M. Nonomura
{"title":"Color Tuning dispense process to minimize color variation","authors":"M. Nonomura","doi":"10.1109/ICSJ.2012.6523415","DOIUrl":"https://doi.org/10.1109/ICSJ.2012.6523415","url":null,"abstract":"This paper shows a dispense process to tune the target color of white LED package. This system enables to monitor the emission color through newly developed color inspection unit and correct the dispense parameter calculated on the basis of the emission color data during the production process. By setting target chromaticity data, the system automatically tunes emitting color of phosphor material on color inspection unit and feedbacks the dispense parameter before dispensing phosphor on actual packages. The standard blue light to emit the phosphor paste in this system can tune same target color with all systems installed in mass-production. The newly developed system can make a desired color in desired quantities, and increase yield rates of white LEDs.","PeriodicalId":174050,"journal":{"name":"2012 2nd IEEE CPMT Symposium Japan","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130710295","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Development of DAF (Die Attach Film) with functional gettering agent for metal impurities 带金属杂质功能捕集剂的DAF(模贴膜)的研制
2012 2nd IEEE CPMT Symposium Japan Pub Date : 2012-12-01 DOI: 10.1109/ICSJ.2012.6523427
S. Takyu, N. Togasaki, T. Kurosawa, Y. Yamada, M. Tamaoki, H. Hayashi, H. Tomita
{"title":"Development of DAF (Die Attach Film) with functional gettering agent for metal impurities","authors":"S. Takyu, N. Togasaki, T. Kurosawa, Y. Yamada, M. Tamaoki, H. Hayashi, H. Tomita","doi":"10.1109/ICSJ.2012.6523427","DOIUrl":"https://doi.org/10.1109/ICSJ.2012.6523427","url":null,"abstract":"Gettering effect which is to trap metal ions on the dangling-bonds located far from the device area is widely known as an inhibition way of this problem. Extrinsic Gettering (EG) method that is formed during back side grinding in the wafer thinning process is one of the most significant technologies considering of reducing cost. However the chip strength has been decreased with increasing the roughness derived from crystal defect. Under these circumstances, we focused on the DAF (Die Attach Film) which is commonly used as an adhesive sheet to stack thin chips and attempted to add a functional gettering agent in this film. We selected Inorganic Ion-Exchange materials as a gettering agent and prepared some samples which have Oxidized Sb for gettering agent. From the result based on this study, the main factor determining gettering effect is an amount of substance of Ion-Exchange materials in the DAF. It's also estimated the quantity of Cu ion adsorption was about 33~50% in the whole of trapped Cu ions in the DAF. And we obtained 38 % Cu ions were adsorbed in the DAF with 10um thickness, which is about 68 % compared to the value from #2000.","PeriodicalId":174050,"journal":{"name":"2012 2nd IEEE CPMT Symposium Japan","volume":"231 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114598930","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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