基于电容充电建模的CMOS微处理器交流电源噪声联合仿真

K. Yoshikawa, M. Nagata
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引用次数: 1

摘要

在集成度较高、电源电压较低的大规模集成电路(LSI)中,功率噪声对系统性能有决定性的影响。功率噪声仿真是大规模集成电路设计的关键环节。本文提出了一种原始的电容充电模型,表达了交流部分的功耗电流,并在90nm CMOS测试芯片上对32位微处理器的功率噪声进行了仿真。片上电源电压和板上电源电流的变化是一致的测量和模拟。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Co-simulation of AC power noise of CMOS microprocessor using capacitor charging modeling
Power noise could decisively impact on the system performance of large-scale integration (LSI), with higher integration and lower power supply voltage. Power noise simulation becomes a key step in the design of LSI systems. This paper presents an original capacitor-charging model that expresses AC part of power consumption current and also demonstrates power noise simulation of a 32 bit microprocessor on a 90 nm CMOS test chip. On-chip power supply voltage and on-board power supply current variations are consistently given by both measurements and simulation.
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