Co-simulation of AC power noise of CMOS microprocessor using capacitor charging modeling

K. Yoshikawa, M. Nagata
{"title":"Co-simulation of AC power noise of CMOS microprocessor using capacitor charging modeling","authors":"K. Yoshikawa, M. Nagata","doi":"10.1109/ICSJ.2012.6523442","DOIUrl":null,"url":null,"abstract":"Power noise could decisively impact on the system performance of large-scale integration (LSI), with higher integration and lower power supply voltage. Power noise simulation becomes a key step in the design of LSI systems. This paper presents an original capacitor-charging model that expresses AC part of power consumption current and also demonstrates power noise simulation of a 32 bit microprocessor on a 90 nm CMOS test chip. On-chip power supply voltage and on-board power supply current variations are consistently given by both measurements and simulation.","PeriodicalId":174050,"journal":{"name":"2012 2nd IEEE CPMT Symposium Japan","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 2nd IEEE CPMT Symposium Japan","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSJ.2012.6523442","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

Power noise could decisively impact on the system performance of large-scale integration (LSI), with higher integration and lower power supply voltage. Power noise simulation becomes a key step in the design of LSI systems. This paper presents an original capacitor-charging model that expresses AC part of power consumption current and also demonstrates power noise simulation of a 32 bit microprocessor on a 90 nm CMOS test chip. On-chip power supply voltage and on-board power supply current variations are consistently given by both measurements and simulation.
基于电容充电建模的CMOS微处理器交流电源噪声联合仿真
在集成度较高、电源电压较低的大规模集成电路(LSI)中,功率噪声对系统性能有决定性的影响。功率噪声仿真是大规模集成电路设计的关键环节。本文提出了一种原始的电容充电模型,表达了交流部分的功耗电流,并在90nm CMOS测试芯片上对32位微处理器的功率噪声进行了仿真。片上电源电压和板上电源电流的变化是一致的测量和模拟。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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