发布求助
文献互助 智能选刊 最新文献

Journal of Semiconductors最新文献

筛选
英文 中文
High-performance GaSb planar PN junction detector 高性能 GaSb 平面 PN 结探测器
IF 5.1 4区 物理与天体物理
Journal of Semiconductors Pub Date : 2024-09-01 DOI: 10.1088/1674-4926/24040024
Yuanzhi Cui, Hongyue Hao, Shihao Zhang, Shuo Wang, Jing Zhang, Yifan Shan, Ruoyu Xie, Xiaoyu Wang, Chuang Wang, Mengchen Liu, Dongwei Jiang, Yingqiang Xu, Guowei Wang, Donghai Wu, Zhichuan Niu, Derang Cao
{"title":"High-performance GaSb planar PN junction detector","authors":"Yuanzhi Cui, Hongyue Hao, Shihao Zhang, Shuo Wang, Jing Zhang, Yifan Shan, Ruoyu Xie, Xiaoyu Wang, Chuang Wang, Mengchen Liu, Dongwei Jiang, Yingqiang Xu, Guowei Wang, Donghai Wu, Zhichuan Niu, Derang Cao","doi":"10.1088/1674-4926/24040024","DOIUrl":"https://doi.org/10.1088/1674-4926/24040024","url":null,"abstract":"This paper examines GaSb short-wavelength infrared detectors employing planar PN junctions. The fabrication was based on the Zn diffusion process and the diffusion temperature was optimized. Characterization revealed a 50% cut-off wavelength of 1.73 <italic toggle=\"yes\">μ</italic>m, a maximum detectivity of 8.73 × 10<sup>10</sup> cm·Hz<sup>1/2</sup>/W, and a minimum dark current density of 1.02 × 10<sup>−5</sup> A/cm<sup>2</sup>. Additionally, a maximum quantum efficiency of 60.3% was achieved. Subsequent optimization of fabrication enabled the realization of a 320 × 256 focal plane array that exhibited satisfactory imaging results. Remarkably, the GaSb planar detectors demonstrated potential in low-cost short wavelength infrared imaging, without requiring material epitaxy or deposition.","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":null,"pages":null},"PeriodicalIF":5.1,"publicationDate":"2024-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142215732","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
10 × 10 Ga2O3-based solar-blind UV detector array and imaging characteristic 基于 Ga2O3 的 10 × 10 太阳盲紫外线探测器阵列和成像特性
IF 5.1 4区 物理与天体物理
Journal of Semiconductors Pub Date : 2024-09-01 DOI: 10.1088/1674-4926/24030005
Haifeng Chen, Zhanhang Liu, Yixin Zhang, Feilong Jia, Chenlu Wu, Qin Lu, Xiangtai Liu, Shaoqing Wang
{"title":"10 × 10 Ga2O3-based solar-blind UV detector array and imaging characteristic","authors":"Haifeng Chen, Zhanhang Liu, Yixin Zhang, Feilong Jia, Chenlu Wu, Qin Lu, Xiangtai Liu, Shaoqing Wang","doi":"10.1088/1674-4926/24030005","DOIUrl":"https://doi.org/10.1088/1674-4926/24030005","url":null,"abstract":"A 10 × 10 solar-blind ultraviolet (UV) imaging array with double-layer wire structure was prepared based on Ga<sub>2</sub>O<sub>3</sub> film grown by atomic layer deposition. These single detection units in the array exhibit excellent performance at 3 V: photo-to-dark current ratio (PDCR) of 5.5 × 10<sup>5</sup>, responsivity (<italic toggle=\"yes\">R</italic>) of 4.28 A/W, external quantum efficiency (EQE) of 2.1 × 10<sup>3</sup>%, detectivity (<italic toggle=\"yes\">D</italic>\u0000<sup>*</sup>) of 1.5 × 10<sup>14</sup> Jones, and fast response time. The photodetector array shows high uniformity under different light intensity and low operating bias. The array also has good temperature stability. Under 300 °C, it still presents clear imaging and keeps high <italic toggle=\"yes\">R</italic> of 34.4 and 6.45 A/W at 5 and 1 V, respectively. This work provides a new insight for the large-scale array of Ga<sub>2</sub>O<sub>3</sub> solar-blind UV detectors.","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":null,"pages":null},"PeriodicalIF":5.1,"publicationDate":"2024-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142215729","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effects of gallium surfactant on AlN thin films by microwave plasma chemical vapor deposition 微波等离子体化学气相沉积法中镓表面活性剂对氮化铝薄膜的影响
IF 5.1 4区 物理与天体物理
Journal of Semiconductors Pub Date : 2024-09-01 DOI: 10.1088/1674-4926/24020017
Lu Wang, Xulei Qin, Li Zhang, Kun Xu, Feng Yang, Shaoqian Lu, Yifei Li, Bosen Liu, Guohao Yu, Zhongming Zeng, Baoshun Zhang
{"title":"Effects of gallium surfactant on AlN thin films by microwave plasma chemical vapor deposition","authors":"Lu Wang, Xulei Qin, Li Zhang, Kun Xu, Feng Yang, Shaoqian Lu, Yifei Li, Bosen Liu, Guohao Yu, Zhongming Zeng, Baoshun Zhang","doi":"10.1088/1674-4926/24020017","DOIUrl":"https://doi.org/10.1088/1674-4926/24020017","url":null,"abstract":"In this work, AlN films were grown using gallium (Ga) as surfactant on 4° off-axis 4H-SiC substrates via microwave plasma chemical vapor deposition (MPCVD). We have found that AlN growth rate can be greatly improved due to the catalytic effect of trimethyl-gallium (TMGa), but AlN crystal structure and composition are not affected. When the proportion of TMGa in gas phase was low, crystal quality of AlN can be improved and three-dimensional growth mode of AlN was enhanced with the increase of Ga source. When the proportion of TMGa in gas phase was high, two-dimensional growth mode of AlN was presented, with the increase of Ga source results in the deterioration of AlN crystal quality. Finally, employing a two-step growth approach, involving the initial growth of Ga-free AlN nucleation layer followed by Ga-assisted AlN growth, high quality of AlN film with flat surface was obtained and the full width at half maximum (FWHM) values of 415 nm AlN (002) and (102) planes were 465 and 597 arcsec.","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":null,"pages":null},"PeriodicalIF":5.1,"publicationDate":"2024-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142215727","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Recent progress on fabrication, spectroscopy properties, and device applications in Sn-doped CdS micro-nano structures 掺锡 CdS 微纳结构的制造、光谱特性和器件应用的最新进展
IF 5.1 4区 物理与天体物理
Journal of Semiconductors Pub Date : 2024-09-01 DOI: 10.1088/1674-4926/24040041
Bo Cao, Ye Tian, Huan Fei Wen, Hao Guo, Xiaoyu Wu, Liangjie Li, Zhenrong Zhang, Lai Liu, Qiang Zhu, Jun Tang, Jun Liu
{"title":"Recent progress on fabrication, spectroscopy properties, and device applications in Sn-doped CdS micro-nano structures","authors":"Bo Cao, Ye Tian, Huan Fei Wen, Hao Guo, Xiaoyu Wu, Liangjie Li, Zhenrong Zhang, Lai Liu, Qiang Zhu, Jun Tang, Jun Liu","doi":"10.1088/1674-4926/24040041","DOIUrl":"https://doi.org/10.1088/1674-4926/24040041","url":null,"abstract":"One-dimensional semiconductor materials possess excellent photoelectric properties and potential for the construction of integrated nanodevices. Among them, Sn-doped CdS has different micro-nano structures, including nanoribbons, nanowires, comb-like structures, and superlattices, with rich optical microcavity modes, excellent optical properties, and a wide range of application fields. This article reviews the research progress of various micrometer structures of Sn-doped CdS, systematically elaborates the effects of different growth conditions on the preparation of Sn-doped CdS micro-nano structures, as well as the spectral characteristics of these structures and their potential applications in certain fields. With the continuous progress of nanotechnology, it is expected that Sn-doped CdS micro-nano structures will achieve more breakthroughs in the field of optoelectronics and form cross-integration with other fields, jointly promoting scientific, technological, and social development.","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":null,"pages":null},"PeriodicalIF":5.1,"publicationDate":"2024-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142215756","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Multiframe-integrated, in-sensor computing using persistent photoconductivity 利用持久光电导技术实现多帧集成传感器内计算
IF 5.1 4区 物理与天体物理
Journal of Semiconductors Pub Date : 2024-09-01 DOI: 10.1088/1674-4926/24040002
Xiaoyong Jiang, Minrui Ye, Yunhai Li, Xiao Fu, Tangxin Li, Qixiao Zhao, Jinjin Wang, Tao Zhang, Jinshui Miao, Zengguang Cheng
{"title":"Multiframe-integrated, in-sensor computing using persistent photoconductivity","authors":"Xiaoyong Jiang, Minrui Ye, Yunhai Li, Xiao Fu, Tangxin Li, Qixiao Zhao, Jinjin Wang, Tao Zhang, Jinshui Miao, Zengguang Cheng","doi":"10.1088/1674-4926/24040002","DOIUrl":"https://doi.org/10.1088/1674-4926/24040002","url":null,"abstract":"The utilization of processing capabilities within the detector holds significant promise in addressing energy consumption and latency challenges. Especially in the context of dynamic motion recognition tasks, where substantial data transfers are necessitated by the generation of extensive information and the need for frame-by-frame analysis. Herein, we present a novel approach for dynamic motion recognition, leveraging a spatial-temporal in-sensor computing system rooted in multiframe integration by employing photodetector. Our approach introduced a retinomorphic MoS<sub>2</sub> photodetector device for motion detection and analysis. The device enables the generation of informative final states, nonlinearly embedding both past and present frames. Subsequent multiply-accumulate (MAC) calculations are efficiently performed as the classifier. When evaluating our devices for target detection and direction classification, we achieved an impressive recognition accuracy of 93.5%. By eliminating the need for frame-by-frame analysis, our system not only achieves high precision but also facilitates energy-efficient in-sensor computing.","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":null,"pages":null},"PeriodicalIF":5.1,"publicationDate":"2024-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142215730","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
InGaZnO-based photoelectric synaptic devices for neuromorphic computing 基于 InGaZnO 的神经形态计算光电突触器件
IF 5.1 4区 物理与天体物理
Journal of Semiconductors Pub Date : 2024-09-01 DOI: 10.1088/1674-4926/24040038
Jieru Song, Jialin Meng, Tianyu Wang, Changjin Wan, Hao Zhu, Qingqing Sun, David Wei Zhang, Lin Chen
{"title":"InGaZnO-based photoelectric synaptic devices for neuromorphic computing","authors":"Jieru Song, Jialin Meng, Tianyu Wang, Changjin Wan, Hao Zhu, Qingqing Sun, David Wei Zhang, Lin Chen","doi":"10.1088/1674-4926/24040038","DOIUrl":"https://doi.org/10.1088/1674-4926/24040038","url":null,"abstract":"Photoelectric synaptic devices could emulate synaptic behaviors utilizing photoelectric effects and offer promising prospects with their high-speed operation and low crosstalk. In this study, we introduced a novel InGaZnO-based photoelectric memristor. Under both electrical and optical stimulation, the device successfully emulated synaptic characteristics including excitatory postsynaptic current (EPSC), paired-pulse facilitation (PPF), long-term potentiation (LTP), and long-term depression (LTD). Furthermore, we demonstrated the practical application of our synaptic devices through the recognition of handwritten digits. The devices have successfully shown their ability to modulate synaptic weights effectively through light pulse stimulation, resulting in a recognition accuracy of up to 93.4%. The results illustrated the potential of IGZO-based memristors in neuromorphic computing, particularly their ability to simulate synaptic functionalities and contribute to image recognition tasks.","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":null,"pages":null},"PeriodicalIF":5.1,"publicationDate":"2024-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142215755","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Localized-states quantum confinement induced by roughness in CdMnTe/CdTe heterostructures grown on Si(111) substrates 硅（111）衬底上生长的碲镉合金/碲镉合金异质结构中粗糙度诱导的局域态量子约束
IF 5.1 4区 物理与天体物理
Journal of Semiconductors Pub Date : 2024-09-01 DOI: 10.1088/1674-4926/24030022
Leonarde N. Rodrigues, Wesley F. Inoch, Marcos L. F. Gomes, Odilon D. D. Couto Jr., Bráulio S. Archanjo, Sukarno O. Ferreira
{"title":"Localized-states quantum confinement induced by roughness in CdMnTe/CdTe heterostructures grown on Si(111) substrates","authors":"Leonarde N. Rodrigues, Wesley F. Inoch, Marcos L. F. Gomes, Odilon D. D. Couto Jr., Bráulio S. Archanjo, Sukarno O. Ferreira","doi":"10.1088/1674-4926/24030022","DOIUrl":"https://doi.org/10.1088/1674-4926/24030022","url":null,"abstract":"This work shows that despite a lattice mismatch of almost 20%, CdMnTe/CdTe/CdMnTe heterostructures grown directly on Si(111) have surprisingly good optical emission properties. The investigated structures were grown by molecular beam epitaxy and characterized by scanning transmission electron microscopy, macro- and micro-photoluminescence. Low temperature macro-photoluminescence experiments indicate three emission bands which depend on the CdTe layer thickness and have different confinement characteristics. Temperature measurements reveal that the lower energy emission band (at 1.48 eV) is associated to defects and bound exciton states, while the main emission at 1.61 eV has a weak 2D character and the higher energy one at 1.71 eV has a well-defined (zero-dimensional, 0D) 0D nature. Micro-photoluminescence measurements show the existence of sharp and strongly circularly polarized (up to 40%) emission lines which can be related to the presence of Mn in the heterostructure. This result opens the possibility of producing photon sources with the typical spin control of the diluted magnetic semiconductors using the low-cost silicon technology.","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":null,"pages":null},"PeriodicalIF":5.1,"publicationDate":"2024-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142215731","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effects of 1 MeV electron radiation on the AlGaN/GaN high electron mobility transistors 1 MeV 电子辐射对氮化铝/氮化镓高电子迁移率晶体管的影响
IF 5.1 4区 物理与天体物理
Journal of Semiconductors Pub Date : 2024-09-01 DOI: 10.1088/1674-4926/24020020
Shijie Pan, Shiwei Feng, Xuan Li, Zixuan Feng, Xiaozhuang Lu, Kun Bai, Yamin Zhang
{"title":"Effects of 1 MeV electron radiation on the AlGaN/GaN high electron mobility transistors","authors":"Shijie Pan, Shiwei Feng, Xuan Li, Zixuan Feng, Xiaozhuang Lu, Kun Bai, Yamin Zhang","doi":"10.1088/1674-4926/24020020","DOIUrl":"https://doi.org/10.1088/1674-4926/24020020","url":null,"abstract":"In this study, the effects of 1 MeV electron radiation on the D-mode GaN-based high electron mobility transistors (HEMTs) were investigated after different radiation doses. The changes in electrical properties of the device were obtained, and the related physical mechanisms were analyzed. It indicated that under the radiation dose of 5 × 10<sup>14</sup> cm<sup>−2</sup>, the channel current cannot be completely pinched off even if the negative gate voltage was lower than the threshold voltage, and the gate leakage current increased significantly. The emission microscopy and scanning electron microscopy were used to determine the damage location. Besides, the radiation dose was adjusted ranging from 5 × 10<sup>12</sup> to 1 × 10<sup>14</sup> cm<sup>−2</sup>, and we noticed that the drain−source current increased and the threshold voltage presented slightly negative shift. By calculations, it suggested that the carrier density and electron mobility gradually increased. It provided a reference for the development of device radiation reinforcement technology.","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":null,"pages":null},"PeriodicalIF":5.1,"publicationDate":"2024-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142215728","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A mechanically coupled MEMS filter with high-Q width extensional mode resonators 具有高 Q 值宽度扩展模式谐振器的机械耦合 MEMS 滤波器
IF 5.1 4区 物理与天体物理
Journal of Semiconductors Pub Date : 2024-07-31 DOI: 10.1088/1674-4926/24050007
Wei Wang, Wenli Liu, Junyuan Zhao, Bo Niu, Zeyu Wu, Yinfang Zhu, Jinling Yang and Fuhua Yang
{"title":"A mechanically coupled MEMS filter with high-Q width extensional mode resonators","authors":"Wei Wang, Wenli Liu, Junyuan Zhao, Bo Niu, Zeyu Wu, Yinfang Zhu, Jinling Yang and Fuhua Yang","doi":"10.1088/1674-4926/24050007","DOIUrl":"https://doi.org/10.1088/1674-4926/24050007","url":null,"abstract":"This work presents a novel radio frequency (RF) narrowband Si micro-electro-mechanical systems (MEMS) filter based on capacitively transduced slotted width extensional mode (WEM) resonators. The flexibility of the plate leads to multiple modes near the target frequency. The high Q-factor resonators of around 100 000 enable narrow bandwidth filters with small size and simplified design. The 1-wavelength and 2-wavelength WEMs were first developed as a pair of coupled modes to form a passband. To reduce bandwidth, two plates are coupled with a λ-length coupling beam. The 79.69 MHz coupled plate filter (CPF) achieved a narrow bandwidth of 8.8 kHz, corresponding to a tiny 0.011%. The CPF exhibits an impressive 34.84 dB stopband rejection and 7.82 dB insertion loss with near-zero passband ripple. In summary, the RF MEMS filter presented in this work shows promising potential for application in RF transceiver front-ends.","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":null,"pages":null},"PeriodicalIF":5.1,"publicationDate":"2024-07-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141934469","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Physico−mathematical model of the voltage−current characteristics of light-emitting diodes with quantum wells based on the Sah−Noyce−Shockley recombination mechanism 基于 Sah-Noyce-Shockley 重组机制的量子阱发光二极管电压-电流特性物理数学模型
IF 5.1 4区 物理与天体物理
Journal of Semiconductors Pub Date : 2024-07-31 DOI: 10.1088/1674-4926/23120044
Fedor I. Manyakhin, Dmitry O. Varlamov, Vladimir P. Krylov, Lyudmila O. Morketsova, Arkady A. Skvortsov and Vladimir K. Nikolaev
{"title":"Physico−mathematical model of the voltage−current characteristics of light-emitting diodes with quantum wells based on the Sah−Noyce−Shockley recombination mechanism","authors":"Fedor I. Manyakhin, Dmitry O. Varlamov, Vladimir P. Krylov, Lyudmila O. Morketsova, Arkady A. Skvortsov and Vladimir K. Nikolaev","doi":"10.1088/1674-4926/23120044","DOIUrl":"https://doi.org/10.1088/1674-4926/23120044","url":null,"abstract":"Herein, a physical and mathematical model of the voltage−current characteristics of a p−n heterostructure with quantum wells (QWs) is prepared using the Sah−Noyce−Shockley (SNS) recombination mechanism to show the SNS recombination rate of the correction function of the distribution of QWs in the space charge region of diode configuration. A comparison of the model voltage−current characteristics (VCCs) with the experimental ones reveals their adequacy. The technological parameters of the structure of the VCC model are determined experimentally using a nondestructive capacitive approach for determining the impurity distribution profile in the active region of the diode structure with a profile depth resolution of up to 10 Å. The correction function in the expression of the recombination rate shows the possibility of determining the derivative of the VCCs of structures with QWs with a nonideality factor of up to 4.","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":null,"pages":null},"PeriodicalIF":5.1,"publicationDate":"2024-07-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141934515","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：481959085
Book学术官方微信