Journal of Semiconductors最新文献

Compositional engineering for lead-free antimony bismuth alloy-based halide perovskite solar cells 无铅锑铋合金基卤化物钙钛矿太阳能电池的组成工程

4区物理与天体物理

Journal of Semiconductors Pub Date : 2025-05-01 DOI: 10.1088/1674-4926/24120038

Ziyu Cai, Junchi Zhu, Chenyuan Ding, Tao Dong, Boyang Yu, Wenzheng Hu, Jiayi Xie, Feng Ye, Qiufeng Ye, Zebo Fang

{"title":"Compositional engineering for lead-free antimony bismuth alloy-based halide perovskite solar cells","authors":"Ziyu Cai, Junchi Zhu, Chenyuan Ding, Tao Dong, Boyang Yu, Wenzheng Hu, Jiayi Xie, Feng Ye, Qiufeng Ye, Zebo Fang","doi":"10.1088/1674-4926/24120038","DOIUrl":"https://doi.org/10.1088/1674-4926/24120038","url":null,"abstract":"Abstract Owing to their low toxicity and remarkable stability, perovskites based on antimony and bismuth have garnered significant interest in recent years. However, A 3 B 2 X 9 perovskite materials derived from antimony and bismuth face several challenges, including excessively wide band gaps, elevated defect densities, and suboptimal film quality, all of which hinder advancements in device efficiency. While extensive studies have been undertaken to investigate the effects of modulating the A-site and X-site elements in lead-free A 3 B 2 X 9 perovskites, there remains a notable scarcity of reports addressing the impact of modifications to the B-site element. In this study, we investigated the alloying of antimony and bismuth within the 2D Cs 3 B 2 I 6 Br 3 perovskite. By systematically varying the ratios of two elements, we found that the incorporation of both antimony and bismuth at the B-site significantly enhances the quality of the perovskite films. Our findings indicate that a 1 : 1 ratio of antimony to bismuth produces the densest films, the highest photoluminescence intensity, and superior photovoltaic performance. Ultimately, the devices fabricated using this optimal ratio achieved an open-circuit voltage ( V OC ) of 1.01 V and a power conversion efficiency (PCE) of 0.645%.","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":"46 5","pages":"052803-052803"},"PeriodicalIF":0.0,"publicationDate":"2025-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147886498","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Polyamino acid-mediated crystallization and crystal stabilization in perovskite for efficient and stable photovoltaic devices 钙钛矿中多氨基酸介导的结晶和晶体稳定用于高效稳定的光伏器件

4区物理与天体物理

Journal of Semiconductors Pub Date : 2025-05-01 DOI: 10.1088/1674-4926/25030040

Chaoyang Wu, Chao Wang, Feifan Chen, Xinhe Dong, Jiajiu Ye, Haiying Zheng

{"title":"Polyamino acid-mediated crystallization and crystal stabilization in perovskite for efficient and stable photovoltaic devices","authors":"Chaoyang Wu, Chao Wang, Feifan Chen, Xinhe Dong, Jiajiu Ye, Haiying Zheng","doi":"10.1088/1674-4926/25030040","DOIUrl":"https://doi.org/10.1088/1674-4926/25030040","url":null,"abstract":"Abstract Although perovskite solar cells (PSCs) demonstrate outstanding power conversion efficiency (PCE), their practical applications are still limited by stability issues caused by various problems such as poor crystal quality triggered structural instability. Herein, to address the structural instability of perovskites, we introduced a polymer additive, poly-L-lysine hydrobromide (PLL), into the perovskite precursor to promote perovskite crystal growth, thereby constructing a stable crystal structure. The results show that the introduction of PLL modulates the colloidal aggregation state in the precursor solution, provides longer time for growth of perovskite and successfully realizes the formation of large-sized perovskite films with high crystallinity. More importantly, owing to its hydrophobic long-chain structure and the widespread distribution of C=O and NH on the chain, PLL firmly locks the perovskite crystals, enhancing their structural stability while blocking the intrusion of external factors such as water molecules, significantly enhances the overall stability of the device. The results show that the PLL-based PSC has negligible hysteresis and its PCE is improved from 22.20% to 23.66%. while the PLL-modified perovskite films and devices demonstrate excellent thermal and environmental stability. These findings highlight PLL as a promising additive for optimizing perovskite crystallization, offering guidance for fabricating efficient and stable photovoltaic devices.","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":"46 5","pages":"052804-052804"},"PeriodicalIF":0.0,"publicationDate":"2025-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147911890","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Bilayer interfacial engineering with PEAI/OAI for synergistic defect passivation in high-performance perovskite solar cells 基于PEAI/OAI的高性能钙钛矿太阳能电池缺陷协同钝化的双层界面工程

4区物理与天体物理

Journal of Semiconductors Pub Date : 2025-05-01 DOI: 10.1088/1674-4926/25030046

Chentai Cao, Yuli Tao, Quan Yang, Haitao Yu, Yonggang Chen, Qiangqiang Meng, Jiajiu Ye, Xu Pan

{"title":"Bilayer interfacial engineering with PEAI/OAI for synergistic defect passivation in high-performance perovskite solar cells","authors":"Chentai Cao, Yuli Tao, Quan Yang, Haitao Yu, Yonggang Chen, Qiangqiang Meng, Jiajiu Ye, Xu Pan","doi":"10.1088/1674-4926/25030046","DOIUrl":"https://doi.org/10.1088/1674-4926/25030046","url":null,"abstract":"Abstract Interfacial defects and environmental instability at perovskite surfaces pose significant challenges for inverted perovskite solar cells (PSCs). Surface post-treatment strategies have emerged as a viable approach to improve film quality and passivate defects. Although organic molecules can passivate both surfaces and grain boundaries via hydrogen or covalent bonding, their limited adsorption specificity often results in incomplete defect neutralization. In this work, we introduce a bilayer passivation approach employing phenethylammonium iodide (PEAI) and n-octylammonium iodide (OAI) to concurrently mitigate non-radiative recombination and improve stability. PEAI passivates undercoordinated Pb 2+ at grain boundaries and surfaces, effectively eliminating deep-level traps and suppressing non-radiative losses. Meanwhile, OAI forms a hydrophobic barrier on the perovskite surface through its long alkyl chains, inhibiting moisture penetration without compromising interfacial charge transport. As a result, the perovskite film exhibits significantly enhanced optoelectronic performance and environmental stability, achieving a champion power conversion efficiency (PCE) of 24.48%.","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":"46 5","pages":"052805-052805"},"PeriodicalIF":0.0,"publicationDate":"2025-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147331918","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 5

Molecular sieves assisted chemical vapor deposition preparation of high-κ dielectric m-ZrO₂ nanosheets 分子筛辅助化学气相沉积制备高介电常数m-ZrO2纳米片

4区物理与天体物理

Journal of Semiconductors Pub Date : 2025-04-01 DOI: 10.1088/1674-4926/24090034

Ting Lu, Zhuojun Duan, Ling Zhang, Yuanyuan Jin, Huimin Li, Song Liu

{"title":"Molecular sieves assisted chemical vapor deposition preparation of high-κ dielectric m-ZrO2 nanosheets","authors":"Ting Lu, Zhuojun Duan, Ling Zhang, Yuanyuan Jin, Huimin Li, Song Liu","doi":"10.1088/1674-4926/24090034","DOIUrl":"https://doi.org/10.1088/1674-4926/24090034","url":null,"abstract":"Abstract In order to address challenges posed by the reduction in transistor size, researchers are concentrating on two-dimensional (2D) materials with high dielectric constants and large band gaps. Monoclinic ZrO 2 (m-ZrO 2 ) has emerged as a promising gate dielectric material due to its suitable dielectric constant, wide band gap, ideal valence-band offset, and good thermodynamic stability. However, current deposition methods face compatibility issues with 2D semiconductors, highlighting the need for high-quality dielectrics and interfaces. Here, high-quality 2D m-ZrO 2 single crystals are successfully prepared using a one-step chemical vapor deposition (CVD) method, aided by 5A molecular sieves for oxygen supply. The prepared ZrO 2 is utilized as a gate dielectric in the construction of MoS 2 field-effect transistors (FETs) to investigate its electrical property. The FETs exhibit a high carrier mobility of up to 5.50 cm 2 ·V −1 ·s −1 , and a current switching ratio ( I on/off ) of approximately 10 4 , which aligns with the current standards of logic circuits, indicating that ZrO 2 has application value as a gate dielectric. The successful one-step preparation of single-crystal ZrO 2 paves the way for the utilization of high- κ gate dielectrics and creates favorable conditions for the development of high-performance semiconductor devices, offering new possibilities for transistor miniaturization.","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":"46 4","pages":"042703-042703"},"PeriodicalIF":0.0,"publicationDate":"2025-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147903944","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

High quality 6-inch single-crystalline AlN template for E-mode HEMT power device 高品质6英寸单晶AlN模板，用于E-mode HEMT电源器件

4区物理与天体物理

Journal of Semiconductors Pub Date : 2025-03-01 DOI: 10.1088/1674-4926/24100041

Zhiwen Liang, Shangfeng Liu, Ye Yuan, Tongxin Lu, Xiaopeng Li, Zirong Wang, Neng Zhang, Tai Li, Xiangdong Li, Q.P. Wang, Shengqiang Zhou, Kai Kang, Jincheng Zhang, Yue Hao, Xinqiang Wang

{"title":"High quality 6-inch single-crystalline AlN template for E-mode HEMT power device","authors":"Zhiwen Liang, Shangfeng Liu, Ye Yuan, Tongxin Lu, Xiaopeng Li, Zirong Wang, Neng Zhang, Tai Li, Xiangdong Li, Q.P. Wang, Shengqiang Zhou, Kai Kang, Jincheng Zhang, Yue Hao, Xinqiang Wang","doi":"10.1088/1674-4926/24100041","DOIUrl":"https://doi.org/10.1088/1674-4926/24100041","url":null,"abstract":"Abstract In the present work, the high uniform 6-inch single-crystalline AlN template is successfully achieved by high temperature annealing technique, which opens up the path towards industrial application in power device. Moreover, the outstanding crystalline-quality is confirmed by Rutherford backscattering spectrometry (RBS). In accompanied with the results from X-ray diffraction, the RBS results along both [0001] and reveal that the in-plane lattice is effectively reordered by high temperature annealing. In addition, the constant Φ epi angle between [0001] and at different depths of 31.54° confirms the uniform compressive strain inside the AlN region. Benefitting from the excellent crystalline quality of AlN template, we can epitaxially grow the enhanced-mode high electron mobility transistor (HEMT) with a graded AlGaN buffer as thin as only ~300 nm. Such an ultra-thin AlGaN buffer layer results in the wafer-bow as low as 18.1 μ m in 6-inch wafer scale. The fabricated HEMT devices with 16 μ m- L GD exhibits a threshold voltage ( V TH ) of 1.1 V and a high OFF-state breakdown voltage ( V BD ) over 1400 V. Furthermore, after 200 V high-voltage OFF-state stress, the current collapse is only 13.6%. Therefore, the advantages of both 6-inch size and excellent crystallinity announces the superiority of single-crystalline AlN template in low-cost electrical power applications.","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":"46 3","pages":"032501-032501"},"PeriodicalIF":0.0,"publicationDate":"2025-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147879550","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

10 × 10 Ga2O3-based solar-blind UV detector array and imaging characteristic 基于 Ga2O3 的 10 × 10 太阳盲紫外线探测器阵列和成像特性

IF 5.1 4区物理与天体物理

Journal of Semiconductors Pub Date : 2024-09-01 DOI: 10.1088/1674-4926/24030005

Haifeng Chen, Zhanhang Liu, Yixin Zhang, Feilong Jia, Chenlu Wu, Qin Lu, Xiangtai Liu, Shaoqing Wang

引用次数: 0

High-performance GaSb planar PN junction detector 高性能 GaSb 平面 PN 结探测器

IF 5.1 4区物理与天体物理

Journal of Semiconductors Pub Date : 2024-09-01 DOI: 10.1088/1674-4926/24040024

Yuanzhi Cui, Hongyue Hao, Shihao Zhang, Shuo Wang, Jing Zhang, Yifan Shan, Ruoyu Xie, Xiaoyu Wang, Chuang Wang, Mengchen Liu, Dongwei Jiang, Yingqiang Xu, Guowei Wang, Donghai Wu, Zhichuan Niu, Derang Cao

引用次数: 0

Effects of gallium surfactant on AlN thin films by microwave plasma chemical vapor deposition 微波等离子体化学气相沉积法中镓表面活性剂对氮化铝薄膜的影响

IF 5.1 4区物理与天体物理

Journal of Semiconductors Pub Date : 2024-09-01 DOI: 10.1088/1674-4926/24020017

Lu Wang, Xulei Qin, Li Zhang, Kun Xu, Feng Yang, Shaoqian Lu, Yifei Li, Bosen Liu, Guohao Yu, Zhongming Zeng, Baoshun Zhang

引用次数: 0

Recent progress on fabrication, spectroscopy properties, and device applications in Sn-doped CdS micro-nano structures 掺锡 CdS 微纳结构的制造、光谱特性和器件应用的最新进展

IF 5.1 4区物理与天体物理

Journal of Semiconductors Pub Date : 2024-09-01 DOI: 10.1088/1674-4926/24040041

Bo Cao, Ye Tian, Huan Fei Wen, Hao Guo, Xiaoyu Wu, Liangjie Li, Zhenrong Zhang, Lai Liu, Qiang Zhu, Jun Tang, Jun Liu

引用次数: 0

Multiframe-integrated, in-sensor computing using persistent photoconductivity 利用持久光电导技术实现多帧集成传感器内计算

IF 5.1 4区物理与天体物理

Journal of Semiconductors Pub Date : 2024-09-01 DOI: 10.1088/1674-4926/24040002

Xiaoyong Jiang, Minrui Ye, Yunhai Li, Xiao Fu, Tangxin Li, Qixiao Zhao, Jinjin Wang, Tao Zhang, Jinshui Miao, Zengguang Cheng

{"title":"Multiframe-integrated, in-sensor computing using persistent photoconductivity","authors":"Xiaoyong Jiang, Minrui Ye, Yunhai Li, Xiao Fu, Tangxin Li, Qixiao Zhao, Jinjin Wang, Tao Zhang, Jinshui Miao, Zengguang Cheng","doi":"10.1088/1674-4926/24040002","DOIUrl":"https://doi.org/10.1088/1674-4926/24040002","url":null,"abstract":"The utilization of processing capabilities within the detector holds significant promise in addressing energy consumption and latency challenges. Especially in the context of dynamic motion recognition tasks, where substantial data transfers are necessitated by the generation of extensive information and the need for frame-by-frame analysis. Herein, we present a novel approach for dynamic motion recognition, leveraging a spatial-temporal in-sensor computing system rooted in multiframe integration by employing photodetector. Our approach introduced a retinomorphic MoS2 photodetector device for motion detection and analysis. The device enables the generation of informative final states, nonlinearly embedding both past and present frames. Subsequent multiply-accumulate (MAC) calculations are efficiently performed as the classifier. When evaluating our devices for target detection and direction classification, we achieved an impressive recognition accuracy of 93.5%. By eliminating the need for frame-by-frame analysis, our system not only achieves high precision but also facilitates energy-efficient in-sensor computing.","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":"11 1","pages":""},"PeriodicalIF":5.1,"publicationDate":"2024-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142215730","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0