Leonarde N. Rodrigues, Wesley F. Inoch, Marcos L. F. Gomes, Odilon D. D. Couto Jr., Bráulio S. Archanjo, Sukarno O. Ferreira
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引用次数: 0
摘要
这项研究表明,尽管晶格失配率接近 20%,但直接生长在 Si(111) 上的碲镉合金/碲镉合金/碲镉合金异质结构具有令人惊讶的良好光学发射特性。所研究的结构是通过分子束外延生长的,并通过扫描透射电子显微镜、宏观和微观光致发光进行了表征。低温宏观光致发光实验显示出三个发射带,它们取决于碲化镉层的厚度,并具有不同的约束特性。温度测量结果表明,低能发射带(1.48 eV 处)与缺陷和束缚激子态有关,而 1.61 eV 处的主发射带具有弱 2D 特性,1.71 eV 处的高能发射带具有明确的(零维,0D)0D 特性。显微光致发光测量结果表明,异质结构中存在尖锐的强圆极化(高达 40%)发射线,这可能与异质结构中存在锰有关。这一结果为利用低成本硅技术生产具有稀释磁性半导体典型自旋控制功能的光子源提供了可能。
Localized-states quantum confinement induced by roughness in CdMnTe/CdTe heterostructures grown on Si(111) substrates
This work shows that despite a lattice mismatch of almost 20%, CdMnTe/CdTe/CdMnTe heterostructures grown directly on Si(111) have surprisingly good optical emission properties. The investigated structures were grown by molecular beam epitaxy and characterized by scanning transmission electron microscopy, macro- and micro-photoluminescence. Low temperature macro-photoluminescence experiments indicate three emission bands which depend on the CdTe layer thickness and have different confinement characteristics. Temperature measurements reveal that the lower energy emission band (at 1.48 eV) is associated to defects and bound exciton states, while the main emission at 1.61 eV has a weak 2D character and the higher energy one at 1.71 eV has a well-defined (zero-dimensional, 0D) 0D nature. Micro-photoluminescence measurements show the existence of sharp and strongly circularly polarized (up to 40%) emission lines which can be related to the presence of Mn in the heterostructure. This result opens the possibility of producing photon sources with the typical spin control of the diluted magnetic semiconductors using the low-cost silicon technology.