高性能 GaSb 平面 PN 结探测器

IF 4.8 4区物理与天体物理 Q2 PHYSICS, CONDENSED MATTER

Journal of Semiconductors Pub Date : 2024-09-01 DOI:10.1088/1674-4926/24040024

Yuanzhi Cui, Hongyue Hao, Shihao Zhang, Shuo Wang, Jing Zhang, Yifan Shan, Ruoyu Xie, Xiaoyu Wang, Chuang Wang, Mengchen Liu, Dongwei Jiang, Yingqiang Xu, Guowei Wang, Donghai Wu, Zhichuan Niu, Derang Cao

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引用次数: 0

摘要

本文研究了采用平面 PN 结的 GaSb 短波红外探测器。该探测器的制造基于锌扩散工艺，并对扩散温度进行了优化。特性分析表明，50% 截止波长为 1.73 μm，最大探测率为 8.73 × 1010 cm-Hz1/2/W，最小暗电流密度为 1.02 × 10-5 A/cm2 。此外，还实现了 60.3% 的最大量子效率。随后对制造工艺进行了优化，实现了 320 × 256 焦平面阵列，成像效果令人满意。值得注意的是，GaSb 平面探测器在低成本短波长红外成像方面表现出了潜力，而无需材料外延或沉积。

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High-performance GaSb planar PN junction detector

This paper examines GaSb short-wavelength infrared detectors employing planar PN junctions. The fabrication was based on the Zn diffusion process and the diffusion temperature was optimized. Characterization revealed a 50% cut-off wavelength of 1.73 μm, a maximum detectivity of 8.73 × 10¹⁰ cm·Hz^1/2/W, and a minimum dark current density of 1.02 × 10⁻⁵ A/cm². Additionally, a maximum quantum efficiency of 60.3% was achieved. Subsequent optimization of fabrication enabled the realization of a 320 × 256 focal plane array that exhibited satisfactory imaging results. Remarkably, the GaSb planar detectors demonstrated potential in low-cost short wavelength infrared imaging, without requiring material epitaxy or deposition.

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来源期刊

Journal of Semiconductors PHYSICS, CONDENSED MATTER-

CiteScore

6.70

自引率

9.80%

发文量

119

期刊介绍： Journal of Semiconductors publishes articles that emphasize semiconductor physics, materials, devices, circuits, and related technology.