Journal of Semiconductors最新文献

{"title":"A landscape of β-Ga₂O₃ Schottky power diodes","authors":"Man Hoi Wong","doi":"10.1088/1674-4926/44/9/091605","DOIUrl":"https://doi.org/10.1088/1674-4926/44/9/091605","url":null,"abstract":"Abstract β -Ga 2 O 3 Schottky barrier diodes have undergone rapid progress in research and development for power electronic applications. This paper reviews state-of-the-art β -Ga 2 O 3 rectifier technologies, including advanced diode architectures that have enabled lower reverse leakage current via the reduced-surface-field effect. Characteristic device properties including on-resistance, breakdown voltage, rectification ratio, dynamic switching, and nonideal effects are summarized for the different devices. Notable results on the high-temperature resilience of β -Ga 2 O 3 Schottky diodes, together with the enabling thermal packaging solutions, are also presented.","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135889875","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A dual-mode image sensor using an all-inorganic perovskite nanowire array for standard and neuromorphic imaging","authors":"Zhenghao Long, Yucheng Ding, Xiao Qiu, Yu Zhou, Shivam Kumar, Zhiyong Fan","doi":"10.1088/1674-4926/44/9/092604","DOIUrl":"https://doi.org/10.1088/1674-4926/44/9/092604","url":null,"abstract":"Abstract The high-density, vertically aligned retinal neuron array provides effective vision, a feature we aim to replicate with electronic devices. However, the conventional complementary metal-oxide-semiconductor (CMOS) image sensor, based on separate designs for sensing, memory, and processing units, limits its integration density. Moreover, redundant signal communication significantly increases energy consumption. Current neuromorphic devices integrating sensing and signal processing show promise in various computer vision applications, but there is still a need for frame-based imaging with good compatibility. In this study, we developed a dual-mode image sensor based on a high-density all-inorganic perovskite nanowire array. The device can switch between frame-based standard imaging mode and neuromorphic imaging mode by applying different biases. This unique bias-dependent photo response is based on a well-designed energy band diagram. The biomimetic alignment of nanowires ensures the potential for high-resolution imaging. To further demonstrate the imaging ability, we conducted pattern reconstruction in both modes with a 10 × 10 crossbar device. This study introduces a novel image sensor with high compatibility and efficiency, suitable for various applications including computer vision, surveillance, and robotics.","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135891233","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Photo-induced flexible semiconductor CdSe/CdS quantum rods alignment","authors":"Wanlong Zhang, Julian Schneider, Maksym F. Prodanov, Valerii V. Vashchenko, Andrey L. Rogach, Xiaocong Yuan, Abhishek K. Srivastava","doi":"10.1088/1674-4926/44/9/092605","DOIUrl":"https://doi.org/10.1088/1674-4926/44/9/092605","url":null,"abstract":"Abstract The anisotropic absorption and emission from semiconductor CdSe/CdS quantum rods (QRs) provide extra benefits among other photoluminescence nanocrystals. Using photo-induced alignment technique, the QRs can be oriented in liquid crystal polymer matrix at a large scale. In this article, a 2D Dammann grating pattern, within “SKL” characters domains aligned QRs in composite film, was fabricated by multi-step photo exposure using several photo masks, and a continuous geometric lens profile pattern aligned QRs was realized by the single step polarization converting holographic irradiation method. Both polarized optical microscope and fluorescence microscope are employed to determine the liquid crystal director profiles and QRs anisotropic excitation properties. We have been able to orient the QRs in fine binary and continuous patterns that confirms the strong quantum rod aligning ability of the proposed method. Thus, the proposed approach paves a way for photo-induced flexible QRs alignments to provide a highly specific and difficult-to-replicate security application at a large scale.","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":"351 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135891231","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Advances in mobility enhancement of ITZO thin-film transistors: a review","authors":"Feilian Chen, Meng Zhang, Yunhao Wan, Xindi Xu, Man Wong, Hoi-Sing Kwok","doi":"10.1088/1674-4926/44/9/091602","DOIUrl":"https://doi.org/10.1088/1674-4926/44/9/091602","url":null,"abstract":"Abstract Indium-tin-zinc oxide (ITZO) thin-film transistor (TFT) technology holds promise for achieving high mobility and offers significant opportunities for commercialization. This paper provides a review of progress made in improving the mobility of ITZO TFTs. This paper begins by describing the development and current status of metal-oxide TFTs, and then goes on to explain the advantages of selecting ITZO as the TFT channel layer. The evaluation criteria for TFTs are subsequently introduced, and the reasons and significance of enhancing mobility are clarified. This paper then explores the development of high-mobility ITZO TFTs from five perspectives: active layer optimization, gate dielectric optimization, electrode optimization, interface optimization, and device structure optimization. Finally, a summary and outlook of the research field are presented.","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135889867","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Fluorination-mitigated high-current degradation of amorphous InGaZnO thin-film transistors","authors":"Yanxin Wang, Jiye Li, Fayang Liu, Dongxiang Luo, Yunping Wang, Shengdong Zhang, Lei Lu","doi":"10.1088/1674-4926/44/9/092601","DOIUrl":"https://doi.org/10.1088/1674-4926/44/9/092601","url":null,"abstract":"Abstract As growing applications demand higher driving currents of oxide semiconductor thin-film transistors (TFTs), severe instabilities and even hard breakdown under high-current stress (HCS) become critical challenges. In this work, the triggering voltage of HCS-induced self-heating (SH) degradation is defined in the output characteristics of amorphous indium-gallium-zinc oxide (a-IGZO) TFTs, and used to quantitatively evaluate the thermal generation process of channel donor defects. The fluorinated a-IGZO (a-IGZO:F) was adopted to effectively retard the triggering of the self-heating (SH) effect, and was supposed to originate from the less population of initial deep-state defects and a slower rate of thermal defect transition in a-IGZO:F. The proposed scheme noticeably enhances the high-current applications of oxide TFTs.","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":"62 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135889874","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Enhancing performance of inverted quantum-dot light-emitting diodes based on a solution-processed hole transport layer via ligand treatment","authors":"Depeng Li, Jingrui Ma, Wenbo Liu, Guohong Xiang, Xiangwei Qu, Siqi Jia, Mi Gu, Jiahao Wei, Pai Liu, Kai Wang, Xiaowei Sun","doi":"10.1088/1674-4926/44/9/092603","DOIUrl":"https://doi.org/10.1088/1674-4926/44/9/092603","url":null,"abstract":"Abstract The performance of inverted quantum-dot light-emitting diodes (QLEDs) based on solution-processed hole transport layers (HTLs) has been limited by the solvent-induced damage to the quantum dot (QD) layer during the spin-coating of the HTL. The lack of compatibility between the HTL's solvent and the QD layer results in an uneven surface, which negatively impacts the overall device performance. In this work, we develop a novel method to solve this problem by modifying the QD film with 1,8-diaminooctane to improve the resistance of the QD layer for the HTL’s solvent. The uniform QD layer leads the inverted red QLED device to achieve a low turn-on voltage of 1.8 V, a high maximum luminance of 105 500 cd/m 2 , and a remarkable maximum external quantum efficiency of 13.34%. This approach releases the considerable potential of HTL materials selection and offers a promising avenue for the development of high-performance inverted QLEDs.","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135891232","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Low-temperature conformal vacuum deposition of OLED devices using close-space sublimation","authors":"Bryan Siu Ting Tam, Shou-Cheng Dong, Ching W. Tang","doi":"10.1088/1674-4926/44/9/092602","DOIUrl":"https://doi.org/10.1088/1674-4926/44/9/092602","url":null,"abstract":"Abstract Close-space sublimation (CSS) has been demonstrated as an alternative vacuum deposition technique for fabricating organic light-emitting diodes (OLEDs). CSS utilizes a planar donor plate pre-coated with organic thin films as an area source to rapidly transfer the donor film to a device substrate at temperatures below 200 °C. CSS is also conformal and capable of depositing on odd-shaped substrates using flexible donor media. The evaporation behaviors of organic donor films under CSS were fully characterized using model OLED materials and CSS-deposited films exhibited comparable device performances in an OLED stack to films deposited by conventional point sources. The low temperature and conformal nature of CSS, along with its high material utilization and short process time, make it a promising method for fabricating flexible OLED displays.","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135891234","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Impedance spectroscopy for quantum dot light-emitting diodes","authors":"Xiangwei Qu, Xiaowei Sun","doi":"10.1088/1674-4926/44/9/091603","DOIUrl":"https://doi.org/10.1088/1674-4926/44/9/091603","url":null,"abstract":"Abstract Impedance spectroscopy has been increasingly employed in quantum dot light-emitting diodes (QLEDs) to investigate the charge dynamics and device physics. In this review, we introduce the mathematical basics of impedance spectroscopy that applied to QLEDs. In particular, we focus on the Nyquist plot, Mott−Schottky analysis, capacitance-frequency and capacitance-voltage characteristics, and the d C /d V measurement of the QLEDs. These impedance measurements can provide critical information on electrical parameters such as equivalent circuit models, characteristic time constants, charge injection and recombination points, and trap distribution of the QLEDs. However, this paper will also discuss the disadvantages and limitations of these measurements. Fundamentally, this review provides a deeper understanding of the device physics of QLEDs through the application of impedance spectroscopy, offering valuable insights into the analysis of performance loss and degradation mechanisms of QLEDs.","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135889870","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Returning to Frankenstein: the spark of being and the fire of life.","authors":"Sara Grimes","doi":"10.1007/s12630-019-01471-z","DOIUrl":"10.1007/s12630-019-01471-z","url":null,"abstract":"","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":"33 1","pages":"274"},"PeriodicalIF":0.0,"publicationDate":"2020-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1007/s12630-019-01471-z","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83248633","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Intensive care discharge summaries for general practice staff: a focus group study.","authors":"Suzanne Bench, Jocelyn Cornish, Andreas Xyrichis","doi":"10.3399/bjgp16X688045","DOIUrl":"10.3399/bjgp16X688045","url":null,"abstract":"<p><strong>Background: </strong>Understanding how patients and relatives can be supported after hospital discharge is a UK research priority. Intensive Care Unit (ICU) discharge summaries are a simple way of providing GPs with the information they require to coordinate ongoing care, but little evidence is available to guide best practice.</p><p><strong>Aim: </strong>This study aimed at better understanding the information needs of GP staff (GPs and practice nurses) supporting former patients of ICUs and their families following discharge from hospital, and identifying the barriers/facilitators associated with ICU-primary care information transfer.</p><p><strong>Design and setting: </strong>This was a qualitative exploratory study of practices and participants throughout the UK.</p><p><strong>Method: </strong>Audiotaped focus group discussions, complemented by small-group/individual interviews, were conducted with 15 former patients of ICUs, four relatives, and 20 GP staff between June and September 2015. Demographic data were captured by questionnaire and qualitative data were thematically analysed.</p><p><strong>Results: </strong>Findings suggest variability in discharge information experiences and blurred lines of responsibility between hospital and GP staff, and patients/relatives. Continuity of care was affected by delayed or poor communication from the hospital; GPs' limited contact with patients from critical care; and a lack of knowledge of the effects of critical illness or resources available to ameliorate these difficulties. Time pressures and information technology were, respectively, the most commonly mentioned barrier and facilitator.</p><p><strong>Conclusion: </strong>Effective rehabilitation after a critical illness requires a coordinated and comprehensive approach, incorporating the provision of well-completed, timely, and relevant ICU-primary care discharge information. Health professionals need an improved understanding of critical illness, and patients and families must be included in all aspects of the information-sharing process.</p>","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":"30 1","pages":"e904-e912"},"PeriodicalIF":0.0,"publicationDate":"2016-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5198666/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83130137","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}