Journal of Semiconductors最新文献

{"title":"A wearable sweat patch for non-invasive and wireless monitoring inflammatory status","authors":"Qilin Hua, Guozhen Shen","doi":"10.1088/1674-4926/44/10/100401","DOIUrl":"https://doi.org/10.1088/1674-4926/44/10/100401","url":null,"abstract":"Sweat diagnostics are being developed to provide insights into monitoring human health status using an accessi-bly non-invasive technique of sweat analysis [1-3] . Abundant compositions, ranging from electrolytes and metabolites to large proteins, can be found in sweat, which have similar types of physiological biomarkers observed in the blood [1] . Recent advances in flexible electronics [4-7] have transformed conventional laboratory tests into personalized sweat molecular analysis that facilitates real-time sensing of target biomarkers [3] . Previous works have shown the simultaneous and selective sensing capabilities of electrolytes (e.g., sodium (Na + ), potassium (K + ), ammonium (NH 4+ ), and chloride (Cl − ) ions) [8] and metabolites (e.g., alcohols, lactate, uric acid, and glucose) [9] by designing fully integrated wearable sensor arrays [8, 10] .","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135849972","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"THz plasmonics and electronics in germanene nanostrips","authors":"Talia Tene, Marco Guevara, Gabriela Tubon-Usca, Oswaldo Villacrés Cáceres, Gabriel Moreano, Cristian Vacacela Gomez, Stefano Bellucci","doi":"10.1088/1674-4926/44/10/102001","DOIUrl":"https://doi.org/10.1088/1674-4926/44/10/102001","url":null,"abstract":"Abstract Germanene nanostrips (GeNSs) have garnered significant attention in modern semiconductor technology due to their exceptional physical characteristics, positioning them as promising candidates for a wide range of applications. GeNSs exhibit a two-dimensional (buckled) honeycomb-like lattice, which is similar to germanene but with controllable bandgaps. The modeling of GeNSs is essential for developing appropriate synthesis methods as it enables understanding and controlling the growth process of these systems. Indeed, one can adjust the strip width, which in turn can tune the bandgap and plasmonic response of the material to meet specific device requirements. In this study, the objective is to investigate the electronic behavior and THz plasmon features of GeNSs (≥100 nm wide). A semi-analytical model based on the charge-carrier velocity of freestanding germanene is utilized for this purpose. The charge-carrier velocity of freestanding germanene is determined through the GW approximation ( <?CDATA ${v}_{mathrm{F}}=0.702 times {10}^{6} $?> m·s −1 ). Within the width range of 100 to 500 nm, GeNSs exhibit narrow bandgaps, typically measuring only a few meV. Specifically, upon analysis, it was found that the bandgaps of the investigated GeNSs ranged between 29 and 6 meV. As well, these nanostrips exhibit <?CDATA $ sqrt{q} $?> -like plasmon dispersions, with their connected plasmonic frequency (≤30 THz) capable of being manipulated by varying parameters such as strip width, excitation plasmon angle, and sample quality. These manipulations can lead to frequency variations, either increasing or decreasing, as well as shifts towards larger momentum values. The outcomes of our study serve as a foundational motivation for future experiments, and further confirmation is needed to validate the reported results.","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":"64 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135921935","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Pressure-dependent electronic, optical, and mechanical properties of antiperovskite X₃NP (X = Ca, Mg): A first-principles study","authors":"Chunbao Feng, Changhe Wu, Xin Luo, Tao Hu, Fanchuan Chen, Shichang Li, Shengnan Duan, Wenjie Hou, Dengfeng Li, Gang Tang, Gang Zhang","doi":"10.1088/1674-4926/44/10/102101","DOIUrl":"https://doi.org/10.1088/1674-4926/44/10/102101","url":null,"abstract":"Abstract Hydrostatic pressure provides an efficient way to tune and optimize the properties of solid materials without changing their composition. In this work, we investigate the electronic, optical, and mechanical properties of antiperovskite X 3 NP (X 2+ = Ca, Mg) upon compression by first-principles calculations. Our results reveal that the system is anisotropic, and the lattice constant a of X 3 NP exhibits the fastest rate of decrease upon compression among the three directions, which is different from the typical Pnma phase of halide and chalcogenide perovskites. Meanwhile, Ca 3 NP has higher compressibility than Mg 3 NP due to its small bulk modulus. The electronic and optical properties of Mg 3 NP show small fluctuations upon compression, but those of Ca 3 NP are more sensitive to pressure due to its higher compressibility and lower unoccupied 3 d orbital energy. For example, the band gap, lattice dielectric constant, and exciton binding energy of Ca 3 NP decrease rapidly as the pressure increases. In addition, the increase in pressure significantly improves the optical absorption and theoretical conversion efficiency of Ca 3 NP. Finally, the mechanical properties of X 3 NP are also increased upon compression due to the reduction in bond length, while inducing a brittle-to-ductile transition. Our research provides theoretical guidance and insights for future experimental tuning of the physical properties of antiperovskite semiconductors by pressure.","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135849974","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"GaAs-based resonant tunneling diode: Device aspects from design, manufacturing, characterization and applications","authors":"Swagata Samanta","doi":"10.1088/1674-4926/44/10/103101","DOIUrl":"https://doi.org/10.1088/1674-4926/44/10/103101","url":null,"abstract":"Abstract This review article discusses the development of gallium arsenide (GaAs)-based resonant tunneling diodes (RTD) since the 1970s. To the best of my knowledge, this article is the first review of GaAs RTD technology which covers different epitaxial-structure design, fabrication techniques, and characterizations for various application areas. It is expected that the details presented here will help the readers to gain a perspective on the previous accomplishments, as well as have an outlook on the current trends and future developments in GaAs RTD research.","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135850470","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Fundamentals and applications of photonic waveguides with bound states in the continuum","authors":"Zejie Yu, He Gao, Yi Wang, Yue Yu, Hon Ki Tsang, Xiankai Sun, Daoxin Dai","doi":"10.1088/1674-4926/44/10/101301","DOIUrl":"https://doi.org/10.1088/1674-4926/44/10/101301","url":null,"abstract":"Abstract Photonic waveguides are the most fundamental element for photonic integrated circuits (PICs). Waveguide properties, such as propagation loss, modal areas, nonlinear coefficients, etc., directly determine the functionalities and performance of PICs. Recently, the emerging waveguides with bound states in the continuum (BICs) have opened new opportunities for PICs because of their special properties in resonance and radiation. Here, we review the recent progress of PICs composed of waveguides with BICs. First, fundamentals including background physics and design rules of a BIC-based waveguide will be introduced. Next, two types of BIC-based waveguide structures, including shallowly etched dielectric and hybrid waveguides, will be presented. Lastly, the challenges and opportunities of PICs with BICs will be discussed.","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":"09 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135849978","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Study of quantum well mixing induced by impurity-free vacancy in the primary epitaxial wafers of a 915 nm semiconductor laser","authors":"Tianjiang He, Suping Liu, Wei Li, Li Zhong, Xiaoyu Ma, Cong Xiong, Nan Lin, Zhennuo Wang","doi":"10.1088/1674-4926/44/10/102302","DOIUrl":"https://doi.org/10.1088/1674-4926/44/10/102302","url":null,"abstract":"Abstract Output power and reliability are the most important characteristic parameters of semiconductor lasers. However, catastrophic optical damage (COD), which usually occurs on the cavity surface, will seriously damage the further improvement of the output power and affect the reliability. To improve the anti-optical disaster ability of the cavity surface, a non-absorption window (NAW) is adopted for the 915 nm InGaAsP/GaAsP single-quantum well semiconductor laser using quantum well mixing (QWI) induced by impurity-free vacancy. Both the principle and the process of point defect diffusion are described in detail in this paper. We also studied the effects of annealing temperature, annealing time, and the thickness of SiO 2 film on the quantum well mixing in a semiconductor laser with a primary epitaxial structure, which is distinct from the previous structures. We found that when compared with the complete epitaxial structure, the blue shift of the semiconductor laser with the primary epitaxial structure is larger under the same conditions. To obtain the appropriate blue shift window, the primary epitaxial structure can use a lower annealing temperature and shorter annealing time. In addition, the process is less expensive. We also provide references for upcoming device fabrication.","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135850196","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Femoral Vein Intravascular Synovial Sarcoma Mimicking Primary Deep Vein Thrombosis-A Rare Cause of Deep Vein Thrombosis.","authors":"R Jayakrishanan, Jineesh Valakkada, Anoop Ayyappan, Rajalakshmi Poyuran, Shivanesan Pitchai","doi":"10.1055/s-0043-1771521","DOIUrl":"10.1055/s-0043-1771521","url":null,"abstract":"<p><p>Synovial sarcomas are rare malignant mesenchymal soft tissue tumors. We presented the case of a 53-year-old woman patient presenting with acute deep vein thrombosis, later diagnosed as a deep synovial sarcoma of the femoral vein wall. The tumor was identified through cross-sectional magnetic resonance angiography and computed tomography, followed by ultrasound-guided core biopsy. The case report emphasized the importance of considering the possibility of an intravascular neoplasm mimicking thrombus, particularly if calcifications, vein expansion with intravascular cystic spaces, fluid-fluid levels, and septations within a thrombosed vein are seen in imaging.</p>","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":"31 1","pages":"156-159"},"PeriodicalIF":5.1,"publicationDate":"2023-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10723955/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83164254","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Preface to Special Issue on Advanced Optoelectronic and Electronic Devices toward Future Displays","authors":"Hoi-Sing Kwok, Zhiyong Fan","doi":"10.1088/1674-4926/44/9/090101","DOIUrl":"https://doi.org/10.1088/1674-4926/44/9/090101","url":null,"abstract":"This year marks the tenth anniversary of the State Key Laboratory of Advanced Displays and Optoelectronics Technologies (SKLADOT) at the Hong Kong University of Science and Technology (HKUST). The predecessor of SKLADOT was the Center for Display Research (CDR) which was started in 1995. Thus display research has a long history at HKUST. Display research is necessarily multidisciplinary combining advances in optics and electronics. In the beginning, we concentrated mainly on liquid crystal displays (LCD) and thin film transistors (TFT) research. They were the key technologies responsible for the explosive growth of active matrix high definition liquid crystal displays around the end of the 90’s and at the beginning of the 21st century. Later, areas in organic light emitting diode (OLED) and quantum technologies were added to our repertoire. However, regardless of the mode of light emission or light modulation, TFT remains the backbone of any modern electronic display. TFT provides active matrix control and is essential for high resolution and high contrast ratios. In the beginning, TFTs were made of amorphous silicon (a-Si). Later, polycrystalline silicon was developed. In fact, low temperature polycrystalline silicon (LTPS) and a-Si are still being used in the production of large flat panel displays nowadays. However, it is believed that metal oxide (MO) TFT will eventually replace both of them. It is because MOTFT has a simple and low cost production process as a-Si and high mobility approaching that of LTPS TFT. At SKLADOT, we conduct extensive research on MOTFT. In this special anniversary issue, we have invited past and present members of SKLADOT to present their results on TFT research. Other papers related to semiconductor technologies are also included. The Special Issue starts with a review paper by Runxiao Shi et al. describing the MOTFT technology developed at HKUST[1]. It also describes the numerous applications in flexible TFT based biomedical devices. Feilian Chen et al. review MOTFT made with a novel material ITZO, which promises high mobility[2]. Yanxin Wang et al. report a method to enhance the stability and lifetime of IGZO MOTFT[3]. Stability is the main issue in preventing the widespread deployment of MOTFT. With the demonstration of fluorination providing excellent stability, it is believed that MOTFT will become even more important in the future. As mentioned, besides TFT, there are other areas of semiconductor research being carried out at SKLADOT. These areas include organic light emitting diode (OLED) as well as QLED based on quantum dots. The paper by Bryan Tam et al. describes a new way to produce high resolution OLED using close space sublimation[4]. The paper by Xiangwei Qu and Xiaowei Sun[5], as well as the paper by Depeng Li et al.[6] review and report the development in quantum dot based QLEDs. Another important organic-inorganic hybrid material that is gaining attention is perovskite. It has some interesting prope","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134994699","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Low-temperature metal–oxide thin-film transistor technologies for implementing flexible electronic circuits and systems","authors":"Runxiao Shi, Tengteng Lei, Zhihe Xia, Man Wong","doi":"10.1088/1674-4926/44/9/091601","DOIUrl":"https://doi.org/10.1088/1674-4926/44/9/091601","url":null,"abstract":"Abstract Here we review two 300 °C metal–oxide (MO) thin-film transistor (TFT) technologies for the implementation of flexible electronic circuits and systems. Fluorination-enhanced TFTs for suppressing the variation and shift of turn-on voltage ( V ON ), and dual-gate TFTs for acquiring sensor signals and modulating V ON have been deployed to improve the robustness and performance of the systems in which they are deployed. Digital circuit building blocks based on fluorinated TFTs have been designed, fabricated, and characterized, which demonstrate the utility of the proposed low-temperature TFT technologies for implementing flexible electronic systems. The construction and characterization of an analog front-end system for the acquisition of bio-potential signals and an active-matrix sensor array for the acquisition of tactile images have been reported recently.","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135889869","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Organic-inorganic halide perovskites for memristors","authors":"Memoona Qammar, Bosen Zou, Jonathan E. Halpert","doi":"10.1088/1674-4926/44/9/091604","DOIUrl":"https://doi.org/10.1088/1674-4926/44/9/091604","url":null,"abstract":"Abstract Organic-inorganic halides perovskites (OHPs) have drawn the attention of many researchers owing to their astonishing and unique optoelectronic properties. They have been extensively used for photovoltaic applications, achieving higher than 26% power conversion efficiency to date. These materials have potential to be deployed for many other applications beyond photovoltaics like photodetectors, sensors, light-emitting diodes (LEDs), and resistors. To address the looming challenge of Moore's law and the Von Neumann bottleneck, many new technologies regarding the computation of architectures and storage of information are being extensively researched. Since the discovery of the memristor as a fourth component of the circuit, many materials are explored for memristive applications. Lately, researchers have advanced the exploration of OHPs for memristive applications. These materials possess promising memristive properties and various kinds of halide perovskites have been used for different applications that are not only limited to data storage but expand towards artificial synapses, and neuromorphic computing. Herein we summarize the recent advancements of OHPs for memristive applications, their unique electronic properties, fabrication of materials, and current progress in this field with some future perspectives and outlooks.","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135889871","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}