A landscape of β-Ga2O3 Schottky power diodes

IF 4.8 4区 物理与天体物理 Q2 PHYSICS, CONDENSED MATTER
Man Hoi Wong
{"title":"A landscape of β-Ga<sub>2</sub>O<sub>3</sub> Schottky power diodes","authors":"Man Hoi Wong","doi":"10.1088/1674-4926/44/9/091605","DOIUrl":null,"url":null,"abstract":"Abstract β -Ga 2 O 3 Schottky barrier diodes have undergone rapid progress in research and development for power electronic applications. This paper reviews state-of-the-art β -Ga 2 O 3 rectifier technologies, including advanced diode architectures that have enabled lower reverse leakage current via the reduced-surface-field effect. Characteristic device properties including on-resistance, breakdown voltage, rectification ratio, dynamic switching, and nonideal effects are summarized for the different devices. Notable results on the high-temperature resilience of β -Ga 2 O 3 Schottky diodes, together with the enabling thermal packaging solutions, are also presented.","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":null,"pages":null},"PeriodicalIF":4.8000,"publicationDate":"2023-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Semiconductors","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1088/1674-4926/44/9/091605","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
引用次数: 2

Abstract

Abstract β -Ga 2 O 3 Schottky barrier diodes have undergone rapid progress in research and development for power electronic applications. This paper reviews state-of-the-art β -Ga 2 O 3 rectifier technologies, including advanced diode architectures that have enabled lower reverse leakage current via the reduced-surface-field effect. Characteristic device properties including on-resistance, breakdown voltage, rectification ratio, dynamic switching, and nonideal effects are summarized for the different devices. Notable results on the high-temperature resilience of β -Ga 2 O 3 Schottky diodes, together with the enabling thermal packaging solutions, are also presented.
β-Ga2O3肖特基功率二极管的景观
摘要β - ga2o3肖特基势垒二极管在电力电子领域的应用研究进展迅速。本文回顾了最新的β - ga2o3整流器技术,包括先进的二极管架构,通过减少表面场效应实现更低的反向泄漏电流。总结了不同器件的特性,包括导通电阻、击穿电压、整流比、动态开关和非理想效应。在β - ga2o3肖特基二极管的高温弹性方面取得了显著的成果,并提出了热封装解决方案。
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来源期刊
Journal of Semiconductors
Journal of Semiconductors PHYSICS, CONDENSED MATTER-
CiteScore
6.70
自引率
9.80%
发文量
119
期刊介绍: Journal of Semiconductors publishes articles that emphasize semiconductor physics, materials, devices, circuits, and related technology.
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