{"title":"β-Ga2O3肖特基功率二极管的景观","authors":"Man Hoi Wong","doi":"10.1088/1674-4926/44/9/091605","DOIUrl":null,"url":null,"abstract":"Abstract β -Ga 2 O 3 Schottky barrier diodes have undergone rapid progress in research and development for power electronic applications. This paper reviews state-of-the-art β -Ga 2 O 3 rectifier technologies, including advanced diode architectures that have enabled lower reverse leakage current via the reduced-surface-field effect. Characteristic device properties including on-resistance, breakdown voltage, rectification ratio, dynamic switching, and nonideal effects are summarized for the different devices. Notable results on the high-temperature resilience of β -Ga 2 O 3 Schottky diodes, together with the enabling thermal packaging solutions, are also presented.","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":null,"pages":null},"PeriodicalIF":4.8000,"publicationDate":"2023-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"A landscape of β-Ga<sub>2</sub>O<sub>3</sub> Schottky power diodes\",\"authors\":\"Man Hoi Wong\",\"doi\":\"10.1088/1674-4926/44/9/091605\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Abstract β -Ga 2 O 3 Schottky barrier diodes have undergone rapid progress in research and development for power electronic applications. This paper reviews state-of-the-art β -Ga 2 O 3 rectifier technologies, including advanced diode architectures that have enabled lower reverse leakage current via the reduced-surface-field effect. Characteristic device properties including on-resistance, breakdown voltage, rectification ratio, dynamic switching, and nonideal effects are summarized for the different devices. Notable results on the high-temperature resilience of β -Ga 2 O 3 Schottky diodes, together with the enabling thermal packaging solutions, are also presented.\",\"PeriodicalId\":17038,\"journal\":{\"name\":\"Journal of Semiconductors\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":4.8000,\"publicationDate\":\"2023-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Semiconductors\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1088/1674-4926/44/9/091605\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"PHYSICS, CONDENSED MATTER\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Semiconductors","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1088/1674-4926/44/9/091605","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
Abstract β -Ga 2 O 3 Schottky barrier diodes have undergone rapid progress in research and development for power electronic applications. This paper reviews state-of-the-art β -Ga 2 O 3 rectifier technologies, including advanced diode architectures that have enabled lower reverse leakage current via the reduced-surface-field effect. Characteristic device properties including on-resistance, breakdown voltage, rectification ratio, dynamic switching, and nonideal effects are summarized for the different devices. Notable results on the high-temperature resilience of β -Ga 2 O 3 Schottky diodes, together with the enabling thermal packaging solutions, are also presented.