β-Ga2O3肖特基功率二极管的景观

IF 4.8 4区物理与天体物理 Q2 PHYSICS, CONDENSED MATTER

Journal of Semiconductors Pub Date : 2023-09-01 DOI:10.1088/1674-4926/44/9/091605

Man Hoi Wong

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引用次数: 2

摘要

摘要β - ga2o3肖特基势垒二极管在电力电子领域的应用研究进展迅速。本文回顾了最新的β - ga2o3整流器技术，包括先进的二极管架构，通过减少表面场效应实现更低的反向泄漏电流。总结了不同器件的特性，包括导通电阻、击穿电压、整流比、动态开关和非理想效应。在β - ga2o3肖特基二极管的高温弹性方面取得了显著的成果，并提出了热封装解决方案。

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A landscape of β-Ga₂O₃ Schottky power diodes

Abstract β -Ga 2 O 3 Schottky barrier diodes have undergone rapid progress in research and development for power electronic applications. This paper reviews state-of-the-art β -Ga 2 O 3 rectifier technologies, including advanced diode architectures that have enabled lower reverse leakage current via the reduced-surface-field effect. Characteristic device properties including on-resistance, breakdown voltage, rectification ratio, dynamic switching, and nonideal effects are summarized for the different devices. Notable results on the high-temperature resilience of β -Ga 2 O 3 Schottky diodes, together with the enabling thermal packaging solutions, are also presented.

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来源期刊

Journal of Semiconductors PHYSICS, CONDENSED MATTER-

CiteScore

6.70

自引率

9.80%

发文量

119

期刊介绍： Journal of Semiconductors publishes articles that emphasize semiconductor physics, materials, devices, circuits, and related technology.