{"title":"10 × 10 Ga2O3-based solar-blind UV detector array and imaging characteristic","authors":"Haifeng Chen, Zhanhang Liu, Yixin Zhang, Feilong Jia, Chenlu Wu, Qin Lu, Xiangtai Liu, Shaoqing Wang","doi":"10.1088/1674-4926/24030005","DOIUrl":null,"url":null,"abstract":"A 10 × 10 solar-blind ultraviolet (UV) imaging array with double-layer wire structure was prepared based on Ga<sub>2</sub>O<sub>3</sub> film grown by atomic layer deposition. These single detection units in the array exhibit excellent performance at 3 V: photo-to-dark current ratio (PDCR) of 5.5 × 10<sup>5</sup>, responsivity (<italic toggle=\"yes\">R</italic>) of 4.28 A/W, external quantum efficiency (EQE) of 2.1 × 10<sup>3</sup>%, detectivity (<italic toggle=\"yes\">D</italic>\n<sup>*</sup>) of 1.5 × 10<sup>14</sup> Jones, and fast response time. The photodetector array shows high uniformity under different light intensity and low operating bias. The array also has good temperature stability. Under 300 °C, it still presents clear imaging and keeps high <italic toggle=\"yes\">R</italic> of 34.4 and 6.45 A/W at 5 and 1 V, respectively. This work provides a new insight for the large-scale array of Ga<sub>2</sub>O<sub>3</sub> solar-blind UV detectors.","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":"229 1","pages":""},"PeriodicalIF":4.8000,"publicationDate":"2024-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Semiconductors","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1088/1674-4926/24030005","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
引用次数: 0
Abstract
A 10 × 10 solar-blind ultraviolet (UV) imaging array with double-layer wire structure was prepared based on Ga2O3 film grown by atomic layer deposition. These single detection units in the array exhibit excellent performance at 3 V: photo-to-dark current ratio (PDCR) of 5.5 × 105, responsivity (R) of 4.28 A/W, external quantum efficiency (EQE) of 2.1 × 103%, detectivity (D*) of 1.5 × 1014 Jones, and fast response time. The photodetector array shows high uniformity under different light intensity and low operating bias. The array also has good temperature stability. Under 300 °C, it still presents clear imaging and keeps high R of 34.4 and 6.45 A/W at 5 and 1 V, respectively. This work provides a new insight for the large-scale array of Ga2O3 solar-blind UV detectors.