掺锡 CdS 微纳结构的制造、光谱特性和器件应用的最新进展

IF 4.8 4区 物理与天体物理 Q2 PHYSICS, CONDENSED MATTER
Bo Cao, Ye Tian, Huan Fei Wen, Hao Guo, Xiaoyu Wu, Liangjie Li, Zhenrong Zhang, Lai Liu, Qiang Zhu, Jun Tang, Jun Liu
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引用次数: 0

摘要

一维半导体材料具有优异的光电特性,具有构建集成纳米器件的潜力。其中,掺杂Sn的CdS具有不同的微纳结构,包括纳米带、纳米线、梳状结构和超晶格等,具有丰富的光学微腔模式、优异的光学性能和广泛的应用领域。本文综述了各种掺锡 CdS 微米结构的研究进展,系统阐述了不同生长条件对掺锡 CdS 微纳结构制备的影响,以及这些结构的光谱特性和在某些领域的潜在应用。随着纳米技术的不断进步,掺Sn CdS微纳结构有望在光电子领域取得更多突破,并与其他领域形成交叉融合,共同推动科技和社会发展。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Recent progress on fabrication, spectroscopy properties, and device applications in Sn-doped CdS micro-nano structures
One-dimensional semiconductor materials possess excellent photoelectric properties and potential for the construction of integrated nanodevices. Among them, Sn-doped CdS has different micro-nano structures, including nanoribbons, nanowires, comb-like structures, and superlattices, with rich optical microcavity modes, excellent optical properties, and a wide range of application fields. This article reviews the research progress of various micrometer structures of Sn-doped CdS, systematically elaborates the effects of different growth conditions on the preparation of Sn-doped CdS micro-nano structures, as well as the spectral characteristics of these structures and their potential applications in certain fields. With the continuous progress of nanotechnology, it is expected that Sn-doped CdS micro-nano structures will achieve more breakthroughs in the field of optoelectronics and form cross-integration with other fields, jointly promoting scientific, technological, and social development.
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来源期刊
Journal of Semiconductors
Journal of Semiconductors PHYSICS, CONDENSED MATTER-
CiteScore
6.70
自引率
9.80%
发文量
119
期刊介绍: Journal of Semiconductors publishes articles that emphasize semiconductor physics, materials, devices, circuits, and related technology.
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