Journal of Semiconductors最新文献_第2页

Self-powered UVC detectors based on α-Ga2O3 with enchanted speed performance 基于 α-Ga2O3 的自供电紫外线探测器，速度性能令人着迷

IF 5.1 4区物理与天体物理

Journal of Semiconductors Pub Date : 2024-07-31 DOI: 10.1088/1674-4926/24020001

Aleksei Almaev, Alexander Tsymbalov, Bogdan Kushnarev, Vladimir Nikolaev, Alexei Pechnikov, Mikhail Scheglov and Andrei Chikiryaka

{"title":"Self-powered UVC detectors based on α-Ga2O3 with enchanted speed performance","authors":"Aleksei Almaev, Alexander Tsymbalov, Bogdan Kushnarev, Vladimir Nikolaev, Alexei Pechnikov, Mikhail Scheglov and Andrei Chikiryaka","doi":"10.1088/1674-4926/24020001","DOIUrl":"https://doi.org/10.1088/1674-4926/24020001","url":null,"abstract":"Detectors were developed for detecting irradiation in the short-wavelength ultraviolet (UVC) interval using high-quality single-crystalline α-Ga2O3 films with Pt interdigital contacts. The films of α-Ga2O3 were grown on planar sapphire substrates with c-plane orientation using halide vapor phase epitaxy. The spectral dependencies of the photo to dark current ratio, responsivity, external quantum efficiency and detectivity of the structures were investigated in the wavelength interval of 200−370 nm. The maximum of photo to dark current ratio, responsivity, external quantum efficiency, and detectivity of the structures were 1.16 × 104 arb. un., 30.6 A/W, 1.65 × 104%, and 6.95 × 1015 Hz0.5·cm/W at a wavelength of 230 nm and an applied voltage of 1 V. The high values of photoelectric properties were due to the internal enhancement of the photoresponse associated with strong hole trapping. The α-Ga2O3 film-based UVC detectors can function in self-powered operation mode due to the built-in electric field at the Pt/α-Ga2O3 interfaces. At a wavelength of 254 nm and zero applied voltage, the structures exhibit a responsivity of 0.13 mA/W and an external quantum efficiency of 6.2 × 10−2%. The UVC detectors based on the α-Ga2O3 films demonstrate high-speed performance with a rise time of 18 ms in self-powered mode.","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":"9 1","pages":""},"PeriodicalIF":5.1,"publicationDate":"2024-07-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141934516","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Review of the SiC LDMOS power device 碳化硅 LDMOS 功率器件回顾

IF 5.1 4区物理与天体物理

Journal of Semiconductors Pub Date : 2024-07-31 DOI: 10.1088/1674-4926/24010029

Ziwei Hu, Jiafei Yao, Ang Li, Qi Sun, Man Li, Kemeng Yang, Jun Zhang, Jing Chen, Maolin Zhang and Yufeng Guo

引用次数: 0

Peripheral carbazole units-decorated MR emitter containing B−N covalent bond for highly efficient green OLEDs with low roll-off 含有 B-N 共价键的外围咔唑单元装饰 MR 发射器，用于制造低滚降的高效绿色 OLED

IF 5.1 4区物理与天体物理

Journal of Semiconductors Pub Date : 2024-07-31 DOI: 10.1088/1674-4926/24040008

Danrui Wan, Jianping Zhou, Guoyun Meng, Ning Su, Dongdong Zhang, Lian Duan and Junqiao Ding

{"title":"Peripheral carbazole units-decorated MR emitter containing B−N covalent bond for highly efficient green OLEDs with low roll-off","authors":"Danrui Wan, Jianping Zhou, Guoyun Meng, Ning Su, Dongdong Zhang, Lian Duan and Junqiao Ding","doi":"10.1088/1674-4926/24040008","DOIUrl":"https://doi.org/10.1088/1674-4926/24040008","url":null,"abstract":"Boron−nitrogen doped multiple resonance (BN-MR) emitters, characterized by B−N covalent bonds, offer distinctive advantages as pivotal building blocks for facile access to novel MR emitters featuring narrowband spectra and high efficiency. However, there remains a scarcity of exploration concerning synthetic methods and structural derivations to expand the library of novel BN-MR emitters. Herein, we present the synthesis of a BN-MR emitter, tCz[B−N]N, through a one-pot borylation reaction directed by the amine group, achieving an impressive yield of 94%. The emitter is decorated by incorporating two 3,6-di-t-butylcarbazole (tCz) units into a B−N covalent bond doped BN-MR parent molecule via para-C−π−D and para-N−π−D conjugations. This peripheral decoration strategy enhances the reverse intersystem crossing process and shifts the emission band towards the pure green region, peaking at 526 nm with a narrowband full-width at half maximum (FWHM) of 41 nm. Consequently, organic light emitting diodes (OLEDs) employing this emitter achieved a maximum external quantum efficiency (EQEmax) value of 27.7%, with minimal efficiency roll-off. Even at a practical luminance of 1000 cd∙m−2, the device maintains a high EQE value of 24.6%.","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":"86 1","pages":""},"PeriodicalIF":5.1,"publicationDate":"2024-07-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141934468","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Embedded high-quality ternary GaAs1−x Sb x quantum dots in GaAs nanowires by molecular-beam epitaxy 通过分子束外延在砷化镓纳米线中嵌入高质量的 GaAs1-x Sb x 三元量子点

IF 5.1 4区物理与天体物理

Journal of Semiconductors Pub Date : 2024-07-31 DOI: 10.1088/1674-4926/24030038

Xiyu Hou, Lianjun Wen, Fengyue He, Ran Zhuo, Lei Liu, Hailong Wang, Qing Zhong, Dong Pan and Jianhua Zhao

{"title":"Embedded high-quality ternary GaAs1−x Sb x quantum dots in GaAs nanowires by molecular-beam epitaxy","authors":"Xiyu Hou, Lianjun Wen, Fengyue He, Ran Zhuo, Lei Liu, Hailong Wang, Qing Zhong, Dong Pan and Jianhua Zhao","doi":"10.1088/1674-4926/24030038","DOIUrl":"https://doi.org/10.1088/1674-4926/24030038","url":null,"abstract":"Semiconductor quantum dots are promising candidates for preparing high-performance single photon sources. A basic requirement for this application is realizing the controlled growth of high-quality semiconductor quantum dots. Here, we report the growth of embedded GaAs1−xSbx quantum dots in GaAs nanowires by molecular-beam epitaxy. It is found that the size of the GaAs1−xSbx quantum dot can be well-defined by the GaAs nanowire. Energy dispersive spectroscopy analyses show that the antimony content x can be up to 0.36 by tuning the growth temperature. All GaAs1−xSbx quantum dots exhibit a pure zinc-blende phase. In addition, we have developed a new technology to grow GaAs passivation layers on the sidewalls of the GaAs1−xSbx quantum dots. Different from the traditional growth process of the passivation layer, GaAs passivation layers can be grown simultaneously with the growth of the embedded GaAs1−xSbx quantum dots. The spontaneous GaAs passivation layer shows a pure zinc-blende phase due to the strict epitaxial relationship between the quantum dot and the passivation layer. The successful fabrication of embedded high-quality GaAs1−xSbx quantum dots lays the foundation for the realization of GaAs1−xSbx-based single photon sources.","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":"193 1","pages":""},"PeriodicalIF":5.1,"publicationDate":"2024-07-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141934519","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Achievable hole concentration at room temperature as a function of Mg concentration for MOCVD-grown p-GaN after sufficient annealing 充分退火后 MOCVD 生长的 p-GaN 在室温下的可实现空穴浓度与镁浓度的函数关系

IF 5.1 4区物理与天体物理

Journal of Semiconductors Pub Date : 2024-07-31 DOI: 10.1088/1674-4926/24010017

Siyi Huang, Masao Ikeda, Feng Zhang, Minglong Zhang, Jianjun Zhu, Shuming Zhang and Jianping Liu

引用次数: 0

A highly sensitive ratiometric near-infrared nanosensor based on erbium-hyperdoped silicon quantum dots for iron(Ⅲ) detection 基于铒-超掺杂硅量子点的高灵敏近红外比率测量法纳米传感器，用于铁(Ⅲ)检测

IF 5.1 4区物理与天体物理

Journal of Semiconductors Pub Date : 2024-07-31 DOI: 10.1088/1674-4926/24020018

Kun Wang, Wenxuan Lai, Zhenyi Ni, Deren Yang and Xiaodong Pi

引用次数: 0

A 128 × 128 SPAD LiDAR sensor with column-parallel 25 ps resolution TA-ADCs 配备列并行 25 ps 分辨率 TA-ADC 的 128 × 128 SPAD 激光雷达传感器

IF 5.1 4区物理与天体物理

Journal of Semiconductors Pub Date : 2024-07-31 DOI: 10.1088/1674-4926/24030019

Na Tian, Zhe Wang, Kai Ma, Xu Yang, Nan Qi, Jian Liu, Nanjian Wu, Runjiang Dou and Liyuan Liu

引用次数: 0

Enhanced thermal emission from metal-free, fully epitaxial structures with epsilon-near-zero InAs layers 具有ε近零砷化镓层的无金属全外延结构的热辐射增强效应

IF 5.1 4区物理与天体物理

Journal of Semiconductors Pub Date : 2024-02-01 DOI: 10.1088/1674-4926/45/2/022101

Karolis Stašys, Andrejus Geižutis, Jan Devenson

引用次数: 0

Controllable thermal rectification design for buildings based on phase change composites 基于相变复合材料的建筑物可控热整流设计

IF 5.1 4区物理与天体物理

Journal of Semiconductors Pub Date : 2024-02-01 DOI: 10.1088/1674-4926/45/2/022301

Hengbin Ding, Xiaoshi Li, Tianhang Li, Xiaoyong Zhao, He Tian

{"title":"Controllable thermal rectification design for buildings based on phase change composites","authors":"Hengbin Ding, Xiaoshi Li, Tianhang Li, Xiaoyong Zhao, He Tian","doi":"10.1088/1674-4926/45/2/022301","DOIUrl":"https://doi.org/10.1088/1674-4926/45/2/022301","url":null,"abstract":"Phase-change material (PCM) is widely used in thermal management due to their unique thermal behavior. However, related research in thermal rectifier is mainly focused on exploring the principles at the fundamental device level, which results in a gap to real applications. Here, we propose a controllable thermal rectification design towards building applications through the direct adhesion of composite thermal rectification material (TRM) based on PCM and reduced graphene oxide (rGO) aerogel to ordinary concrete walls (CWs). The design is evaluated in detail by combining experiments and finite element analysis. It is found that, TRM can regulate the temperature difference on both sides of the TRM/CWs system by thermal rectification. The difference in two directions reaches to 13.8 K at the heat flow of 80 W/m<sup>2</sup>. In addition, the larger the change of thermal conductivity before and after phase change of TRM is, the more effective it is for regulating temperature difference in two directions. The stated technology has a wide range of applications for the thermal energy control in buildings with specific temperature requirements.","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":"42 1","pages":""},"PeriodicalIF":5.1,"publicationDate":"2024-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139761890","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Progress in efficient doping of Al-rich AlGaN 高效掺杂富铝氮化铝的进展

IF 5.1 4区物理与天体物理

Journal of Semiconductors Pub Date : 2024-02-01 DOI: 10.1088/1674-4926/45/2/021501

Jiaming Wang, Fujun Xu, Lisheng Zhang, Jing Lang, Xuzhou Fang, Ziyao Zhang, Xueqi Guo, Chen Ji, Chengzhi Ji, Fuyun Tan, Xuelin Yang, Xiangning Kang, Zhixin Qin, Ning Tang, Xinqiang Wang, Weikun Ge, Bo Shen

{"title":"Progress in efficient doping of Al-rich AlGaN","authors":"Jiaming Wang, Fujun Xu, Lisheng Zhang, Jing Lang, Xuzhou Fang, Ziyao Zhang, Xueqi Guo, Chen Ji, Chengzhi Ji, Fuyun Tan, Xuelin Yang, Xiangning Kang, Zhixin Qin, Ning Tang, Xinqiang Wang, Weikun Ge, Bo Shen","doi":"10.1088/1674-4926/45/2/021501","DOIUrl":"https://doi.org/10.1088/1674-4926/45/2/021501","url":null,"abstract":"The development of semiconductors is always accompanied by the progress in controllable doping techniques. Taking AlGaN-based ultraviolet (UV) emitters as an example, despite a peak wall-plug efficiency of 15.3% at the wavelength of 275 nm, there is still a huge gap in comparison with GaN-based visible light-emitting diodes (LEDs), mainly attributed to the inefficient doping of AlGaN with increase of the Al composition. First, p-doping of Al-rich AlGaN is a long-standing challenge and the low hole concentration seriously restricts the carrier injection efficiency. Although p-GaN cladding layers are widely adopted as a compromise, the high injection barrier of holes as well as the inevitable loss of light extraction cannot be neglected. While in terms of n-doping the main issue is the degradation of the electrical property when the Al composition exceeds 80%, resulting in a low electrical efficiency in sub-250 nm UV-LEDs. This review summarizes the recent advances and outlines the major challenges in the efficient doping of Al-rich AlGaN, meanwhile the corresponding approaches pursued to overcome the doping issues are discussed in detail.","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":"60 1","pages":""},"PeriodicalIF":5.1,"publicationDate":"2024-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139761807","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0