Journal of Semiconductors最新文献_第2页

Self-powered UVC detectors based on α-Ga2O3 with enchanted speed performance 基于 α-Ga2O3 的自供电紫外线探测器，速度性能令人着迷

IF 5.1 4区物理与天体物理

Journal of Semiconductors Pub Date : 2024-07-31 DOI: 10.1088/1674-4926/24020001

Aleksei Almaev, Alexander Tsymbalov, Bogdan Kushnarev, Vladimir Nikolaev, Alexei Pechnikov, Mikhail Scheglov and Andrei Chikiryaka

{"title":"Self-powered UVC detectors based on α-Ga2O3 with enchanted speed performance","authors":"Aleksei Almaev, Alexander Tsymbalov, Bogdan Kushnarev, Vladimir Nikolaev, Alexei Pechnikov, Mikhail Scheglov and Andrei Chikiryaka","doi":"10.1088/1674-4926/24020001","DOIUrl":"https://doi.org/10.1088/1674-4926/24020001","url":null,"abstract":"Detectors were developed for detecting irradiation in the short-wavelength ultraviolet (UVC) interval using high-quality single-crystalline α-Ga2O3 films with Pt interdigital contacts. The films of α-Ga2O3 were grown on planar sapphire substrates with c-plane orientation using halide vapor phase epitaxy. The spectral dependencies of the photo to dark current ratio, responsivity, external quantum efficiency and detectivity of the structures were investigated in the wavelength interval of 200−370 nm. The maximum of photo to dark current ratio, responsivity, external quantum efficiency, and detectivity of the structures were 1.16 × 104 arb. un., 30.6 A/W, 1.65 × 104%, and 6.95 × 1015 Hz0.5·cm/W at a wavelength of 230 nm and an applied voltage of 1 V. The high values of photoelectric properties were due to the internal enhancement of the photoresponse associated with strong hole trapping. The α-Ga2O3 film-based UVC detectors can function in self-powered operation mode due to the built-in electric field at the Pt/α-Ga2O3 interfaces. At a wavelength of 254 nm and zero applied voltage, the structures exhibit a responsivity of 0.13 mA/W and an external quantum efficiency of 6.2 × 10−2%. The UVC detectors based on the α-Ga2O3 films demonstrate high-speed performance with a rise time of 18 ms in self-powered mode.","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":null,"pages":null},"PeriodicalIF":5.1,"publicationDate":"2024-07-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141934516","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Review of the SiC LDMOS power device 碳化硅 LDMOS 功率器件回顾

IF 5.1 4区物理与天体物理

Journal of Semiconductors Pub Date : 2024-07-31 DOI: 10.1088/1674-4926/24010029

Ziwei Hu, Jiafei Yao, Ang Li, Qi Sun, Man Li, Kemeng Yang, Jun Zhang, Jing Chen, Maolin Zhang and Yufeng Guo

引用次数: 0

Embedded high-quality ternary GaAs1−x Sb x quantum dots in GaAs nanowires by molecular-beam epitaxy 通过分子束外延在砷化镓纳米线中嵌入高质量的 GaAs1-x Sb x 三元量子点

IF 5.1 4区物理与天体物理

Journal of Semiconductors Pub Date : 2024-07-31 DOI: 10.1088/1674-4926/24030038

Xiyu Hou, Lianjun Wen, Fengyue He, Ran Zhuo, Lei Liu, Hailong Wang, Qing Zhong, Dong Pan and Jianhua Zhao

{"title":"Embedded high-quality ternary GaAs1−x Sb x quantum dots in GaAs nanowires by molecular-beam epitaxy","authors":"Xiyu Hou, Lianjun Wen, Fengyue He, Ran Zhuo, Lei Liu, Hailong Wang, Qing Zhong, Dong Pan and Jianhua Zhao","doi":"10.1088/1674-4926/24030038","DOIUrl":"https://doi.org/10.1088/1674-4926/24030038","url":null,"abstract":"Semiconductor quantum dots are promising candidates for preparing high-performance single photon sources. A basic requirement for this application is realizing the controlled growth of high-quality semiconductor quantum dots. Here, we report the growth of embedded GaAs1−xSbx quantum dots in GaAs nanowires by molecular-beam epitaxy. It is found that the size of the GaAs1−xSbx quantum dot can be well-defined by the GaAs nanowire. Energy dispersive spectroscopy analyses show that the antimony content x can be up to 0.36 by tuning the growth temperature. All GaAs1−xSbx quantum dots exhibit a pure zinc-blende phase. In addition, we have developed a new technology to grow GaAs passivation layers on the sidewalls of the GaAs1−xSbx quantum dots. Different from the traditional growth process of the passivation layer, GaAs passivation layers can be grown simultaneously with the growth of the embedded GaAs1−xSbx quantum dots. The spontaneous GaAs passivation layer shows a pure zinc-blende phase due to the strict epitaxial relationship between the quantum dot and the passivation layer. The successful fabrication of embedded high-quality GaAs1−xSbx quantum dots lays the foundation for the realization of GaAs1−xSbx-based single photon sources.","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":null,"pages":null},"PeriodicalIF":5.1,"publicationDate":"2024-07-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141934519","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Peripheral carbazole units-decorated MR emitter containing B−N covalent bond for highly efficient green OLEDs with low roll-off 含有 B-N 共价键的外围咔唑单元装饰 MR 发射器，用于制造低滚降的高效绿色 OLED

IF 5.1 4区物理与天体物理

Journal of Semiconductors Pub Date : 2024-07-31 DOI: 10.1088/1674-4926/24040008

Danrui Wan, Jianping Zhou, Guoyun Meng, Ning Su, Dongdong Zhang, Lian Duan and Junqiao Ding

{"title":"Peripheral carbazole units-decorated MR emitter containing B−N covalent bond for highly efficient green OLEDs with low roll-off","authors":"Danrui Wan, Jianping Zhou, Guoyun Meng, Ning Su, Dongdong Zhang, Lian Duan and Junqiao Ding","doi":"10.1088/1674-4926/24040008","DOIUrl":"https://doi.org/10.1088/1674-4926/24040008","url":null,"abstract":"Boron−nitrogen doped multiple resonance (BN-MR) emitters, characterized by B−N covalent bonds, offer distinctive advantages as pivotal building blocks for facile access to novel MR emitters featuring narrowband spectra and high efficiency. However, there remains a scarcity of exploration concerning synthetic methods and structural derivations to expand the library of novel BN-MR emitters. Herein, we present the synthesis of a BN-MR emitter, tCz[B−N]N, through a one-pot borylation reaction directed by the amine group, achieving an impressive yield of 94%. The emitter is decorated by incorporating two 3,6-di-t-butylcarbazole (tCz) units into a B−N covalent bond doped BN-MR parent molecule via para-C−π−D and para-N−π−D conjugations. This peripheral decoration strategy enhances the reverse intersystem crossing process and shifts the emission band towards the pure green region, peaking at 526 nm with a narrowband full-width at half maximum (FWHM) of 41 nm. Consequently, organic light emitting diodes (OLEDs) employing this emitter achieved a maximum external quantum efficiency (EQEmax) value of 27.7%, with minimal efficiency roll-off. Even at a practical luminance of 1000 cd∙m−2, the device maintains a high EQE value of 24.6%.","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":null,"pages":null},"PeriodicalIF":5.1,"publicationDate":"2024-07-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141934468","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A highly sensitive ratiometric near-infrared nanosensor based on erbium-hyperdoped silicon quantum dots for iron(Ⅲ) detection 基于铒-超掺杂硅量子点的高灵敏近红外比率测量法纳米传感器，用于铁(Ⅲ)检测

IF 5.1 4区物理与天体物理

Journal of Semiconductors Pub Date : 2024-07-31 DOI: 10.1088/1674-4926/24020018

Kun Wang, Wenxuan Lai, Zhenyi Ni, Deren Yang and Xiaodong Pi

引用次数: 0

A 128 × 128 SPAD LiDAR sensor with column-parallel 25 ps resolution TA-ADCs 配备列并行 25 ps 分辨率 TA-ADC 的 128 × 128 SPAD 激光雷达传感器

IF 5.1 4区物理与天体物理

Journal of Semiconductors Pub Date : 2024-07-31 DOI: 10.1088/1674-4926/24030019

Na Tian, Zhe Wang, Kai Ma, Xu Yang, Nan Qi, Jian Liu, Nanjian Wu, Runjiang Dou and Liyuan Liu

引用次数: 0

Achievable hole concentration at room temperature as a function of Mg concentration for MOCVD-grown p-GaN after sufficient annealing 充分退火后 MOCVD 生长的 p-GaN 在室温下的可实现空穴浓度与镁浓度的函数关系

IF 5.1 4区物理与天体物理

Journal of Semiconductors Pub Date : 2024-07-31 DOI: 10.1088/1674-4926/24010017

Siyi Huang, Masao Ikeda, Feng Zhang, Minglong Zhang, Jianjun Zhu, Shuming Zhang and Jianping Liu

引用次数: 0

Assembly of functional carboxymethyl cellulose/polyethylene oxide/anatase TiO2 nanocomposites and tuning the dielectric relaxation, optical, and photoluminescence performances 组装功能性羧甲基纤维素/聚环氧乙烷/阳极氧化钛纳米复合材料并调整介电弛豫、光学和光致发光性能

IF 4.8 4区物理与天体物理

Journal of Semiconductors Pub Date : 2024-07-01 DOI: 10.1088/1674-4926/24020026

Asmaa M. Ismail, Abeer A. Reffaee, Fawzy G El Desouky

{"title":"Assembly of functional carboxymethyl cellulose/polyethylene oxide/anatase TiO2 nanocomposites and tuning the dielectric relaxation, optical, and photoluminescence performances","authors":"Asmaa M. Ismail, Abeer A. Reffaee, Fawzy G El Desouky","doi":"10.1088/1674-4926/24020026","DOIUrl":"https://doi.org/10.1088/1674-4926/24020026","url":null,"abstract":"\u0000 Nanocomposite films consisting of carboxymethyl cellulose, polyethylene oxide (CMC/PEO), and anatase titanium dioxide (TO) were produced by the use of sol-gel and solution casting techniques. TiO2 nanocrystals were effectively incorporated into CMC/PEO polymers, as shown by X-ray diffraction (XRD) and attenuated total reflectance fourier transform infrared (ATR-FTIR) analysis. The roughness growth is at high levels of TO nanocrystals (TO NCs), which means increasing active sites and defects in CMC/PEO. In differential scanning calorimetry (DSC) thermograms, the change in glass transition temperature (T\u0000 g) values verifies that the polymer blend interacts with TO NCs. The increment proportions of TO NCs have a notable impact on the dielectric performances of the nanocomposites, as observed. The electrical properties of the CMC/PEO/TO nanocomposite undergo significant changes. The nanocomposite films exhibit a red alteration in the absorption edge as the concentration of TO NCs increases in the polymer blend. The decline in the energy gap is readily apparent as the weight percentage of TO NCs increases. The photoluminescence (PL) emission spectra indicate that the sites of the luminescence peak maximums show slight variation; peaks get wider, while their intensities decrease dramatically as the concentration of TO increases. These nanocomposite materials show potential for multifunctional applications including optoelectronics, antireflection coatings, photocatalysis, light emitting diodes, and solid polymer electrolytes.","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":null,"pages":null},"PeriodicalIF":4.8,"publicationDate":"2024-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141701809","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Defects evolution in n-type 4H-SiC induced by electron irradiation and annealing 电子辐照和退火诱导的 n 型 4H-SiC 缺陷演化

IF 4.8 4区物理与天体物理

Journal of Semiconductors Pub Date : 2024-07-01 DOI: 10.1088/1674-4926/23090024

Huifan Xiong, Xuesong Lu, Xu Gao, Yuchao Yan, Shuai Liu, Lihui Song, Deren Yang, X. Pi

{"title":"Defects evolution in n-type 4H-SiC induced by electron irradiation and annealing","authors":"Huifan Xiong, Xuesong Lu, Xu Gao, Yuchao Yan, Shuai Liu, Lihui Song, Deren Yang, X. Pi","doi":"10.1088/1674-4926/23090024","DOIUrl":"https://doi.org/10.1088/1674-4926/23090024","url":null,"abstract":"\u0000 Radiation damage produced in 4H-SiC by electrons of different doses is presented by using multiple characterization techniques. Raman spectra results indicate that SiC crystal structures are essentially impervious to 10 MeV electron irradiation with doses up to 3000 kGy. However, irradiation indeed leads to the generation of various defects, which are evaluated through photoluminescence (PL) and deep level transient spectroscopy (DLTS). The PL spectra feature a prominent broad band centered at 500 nm, accompanied by several smaller peaks ranging from 660 to 808 nm. The intensity of each PL peak demonstrates a linear correlation with the irradiation dose, indicating a proportional increase in defect concentration during irradiation. The DLTS spectra reveal several thermally unstable and stable defects that exhibit similarities at low irradiation doses. Notably, after irradiating at the higher dose of 1000 kGy, a new stable defect labeled as R\u0000 2 (Ec − 0.51 eV) appeared after annealing at 800 K. Furthermore, the impact of irradiation-induced defects on SiC junction barrier Schottky diodes is discussed. It is observed that high-dose electron irradiation converts SiC n-epilayers to semi-insulating layers. However, subjecting the samples to a temperature of only 800 K results in a significant reduction in resistance due to the annealing out of unstable defects.","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":null,"pages":null},"PeriodicalIF":4.8,"publicationDate":"2024-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141696581","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A peak enhancement of frequency response of waveguide integrated silicon-based germanium avalanche photodetector 波导集成硅基锗雪崩光电探测器频率响应的峰值增强

IF 4.8 4区物理与天体物理

Journal of Semiconductors Pub Date : 2024-07-01 DOI: 10.1088/1674-4926/24020006

Linkai Yi, Daoqun Liu, Wenzheng Cheng, Daimo Li, Guoqi Zhou, Peng Zhang, Bo Tang, Bin Li, Wenwu Wang, Yan Yang, Zhihua Li

{"title":"A peak enhancement of frequency response of waveguide integrated silicon-based germanium avalanche photodetector","authors":"Linkai Yi, Daoqun Liu, Wenzheng Cheng, Daimo Li, Guoqi Zhou, Peng Zhang, Bo Tang, Bin Li, Wenwu Wang, Yan Yang, Zhihua Li","doi":"10.1088/1674-4926/24020006","DOIUrl":"https://doi.org/10.1088/1674-4926/24020006","url":null,"abstract":"\u0000 Avalanche photodetectors (APDs) featuring an avalanche multiplication region are vital for reaching high sensitivity and responsivity in optical transceivers. Waveguide-coupled Ge-on-Si separate absorption, charge, and multiplication (SACM) APDs are popular due to their straightforward fabrication process, low optical propagation loss, and high detection sensitivity in optical communications. This paper introduces a lateral SACM Ge-on-Si APD on a silicon-on-insulator (SOI) wafer, featuring a 10 μm-long, 0.5 μm-wide Ge layer at 1310 nm on a standard 8-inch silicon photonics platform. The dark current measures approximately 38.6 μA at −21 V, indicating a breakdown voltage greater than −21 V for the device. The APDs exhibit a unit-gain responsivity of 0.5 A/W at −10 V. At −15 V, their responsivity reaches 2.98 and 2.91 A/W with input powers of −10 and −25 dBm, respectively. The device's 3-dB bandwidth is 15 GHz with an input power of −15 dBm and a gain is 11.68. Experimental results show a peak in impedance at high bias voltages, attributed to inductor and capacitor (LC) circuit resonance, enhancing frequency response. Furthermore, 20 Gbps eye diagrams at −21 V and −9 dBm input power reveal signal to noise ratio (SNRs) of 5.30. This lateral SACM APD, compatible with the stand complementary metal oxide semiconductor (CMOS) process, shows that utilizing the peaking effect at low optical power increases bandwidth.","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":null,"pages":null},"PeriodicalIF":4.8,"publicationDate":"2024-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141697732","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0