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InGaZnO-based photoelectric synaptic devices for neuromorphic computing 基于 InGaZnO 的神经形态计算光电突触器件
IF 5.1 4区 物理与天体物理
Journal of Semiconductors Pub Date : 2024-09-01 DOI: 10.1088/1674-4926/24040038
Jieru Song, Jialin Meng, Tianyu Wang, Changjin Wan, Hao Zhu, Qingqing Sun, David Wei Zhang, Lin Chen
{"title":"InGaZnO-based photoelectric synaptic devices for neuromorphic computing","authors":"Jieru Song, Jialin Meng, Tianyu Wang, Changjin Wan, Hao Zhu, Qingqing Sun, David Wei Zhang, Lin Chen","doi":"10.1088/1674-4926/24040038","DOIUrl":"https://doi.org/10.1088/1674-4926/24040038","url":null,"abstract":"Photoelectric synaptic devices could emulate synaptic behaviors utilizing photoelectric effects and offer promising prospects with their high-speed operation and low crosstalk. In this study, we introduced a novel InGaZnO-based photoelectric memristor. Under both electrical and optical stimulation, the device successfully emulated synaptic characteristics including excitatory postsynaptic current (EPSC), paired-pulse facilitation (PPF), long-term potentiation (LTP), and long-term depression (LTD). Furthermore, we demonstrated the practical application of our synaptic devices through the recognition of handwritten digits. The devices have successfully shown their ability to modulate synaptic weights effectively through light pulse stimulation, resulting in a recognition accuracy of up to 93.4%. The results illustrated the potential of IGZO-based memristors in neuromorphic computing, particularly their ability to simulate synaptic functionalities and contribute to image recognition tasks.","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":"3 1","pages":""},"PeriodicalIF":5.1,"publicationDate":"2024-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142215755","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Localized-states quantum confinement induced by roughness in CdMnTe/CdTe heterostructures grown on Si(111) substrates 硅（111）衬底上生长的碲镉合金/碲镉合金异质结构中粗糙度诱导的局域态量子约束
IF 5.1 4区 物理与天体物理
Journal of Semiconductors Pub Date : 2024-09-01 DOI: 10.1088/1674-4926/24030022
Leonarde N. Rodrigues, Wesley F. Inoch, Marcos L. F. Gomes, Odilon D. D. Couto Jr., Bráulio S. Archanjo, Sukarno O. Ferreira
{"title":"Localized-states quantum confinement induced by roughness in CdMnTe/CdTe heterostructures grown on Si(111) substrates","authors":"Leonarde N. Rodrigues, Wesley F. Inoch, Marcos L. F. Gomes, Odilon D. D. Couto Jr., Bráulio S. Archanjo, Sukarno O. Ferreira","doi":"10.1088/1674-4926/24030022","DOIUrl":"https://doi.org/10.1088/1674-4926/24030022","url":null,"abstract":"This work shows that despite a lattice mismatch of almost 20%, CdMnTe/CdTe/CdMnTe heterostructures grown directly on Si(111) have surprisingly good optical emission properties. The investigated structures were grown by molecular beam epitaxy and characterized by scanning transmission electron microscopy, macro- and micro-photoluminescence. Low temperature macro-photoluminescence experiments indicate three emission bands which depend on the CdTe layer thickness and have different confinement characteristics. Temperature measurements reveal that the lower energy emission band (at 1.48 eV) is associated to defects and bound exciton states, while the main emission at 1.61 eV has a weak 2D character and the higher energy one at 1.71 eV has a well-defined (zero-dimensional, 0D) 0D nature. Micro-photoluminescence measurements show the existence of sharp and strongly circularly polarized (up to 40%) emission lines which can be related to the presence of Mn in the heterostructure. This result opens the possibility of producing photon sources with the typical spin control of the diluted magnetic semiconductors using the low-cost silicon technology.","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":"277 1","pages":""},"PeriodicalIF":5.1,"publicationDate":"2024-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142215731","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effects of 1 MeV electron radiation on the AlGaN/GaN high electron mobility transistors 1 MeV 电子辐射对氮化铝/氮化镓高电子迁移率晶体管的影响
IF 5.1 4区 物理与天体物理
Journal of Semiconductors Pub Date : 2024-09-01 DOI: 10.1088/1674-4926/24020020
Shijie Pan, Shiwei Feng, Xuan Li, Zixuan Feng, Xiaozhuang Lu, Kun Bai, Yamin Zhang
{"title":"Effects of 1 MeV electron radiation on the AlGaN/GaN high electron mobility transistors","authors":"Shijie Pan, Shiwei Feng, Xuan Li, Zixuan Feng, Xiaozhuang Lu, Kun Bai, Yamin Zhang","doi":"10.1088/1674-4926/24020020","DOIUrl":"https://doi.org/10.1088/1674-4926/24020020","url":null,"abstract":"In this study, the effects of 1 MeV electron radiation on the D-mode GaN-based high electron mobility transistors (HEMTs) were investigated after different radiation doses. The changes in electrical properties of the device were obtained, and the related physical mechanisms were analyzed. It indicated that under the radiation dose of 5 × 10<sup>14</sup> cm<sup>−2</sup>, the channel current cannot be completely pinched off even if the negative gate voltage was lower than the threshold voltage, and the gate leakage current increased significantly. The emission microscopy and scanning electron microscopy were used to determine the damage location. Besides, the radiation dose was adjusted ranging from 5 × 10<sup>12</sup> to 1 × 10<sup>14</sup> cm<sup>−2</sup>, and we noticed that the drain−source current increased and the threshold voltage presented slightly negative shift. By calculations, it suggested that the carrier density and electron mobility gradually increased. It provided a reference for the development of device radiation reinforcement technology.","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":"53 1","pages":""},"PeriodicalIF":5.1,"publicationDate":"2024-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142215728","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A mechanically coupled MEMS filter with high-Q width extensional mode resonators 具有高 Q 值宽度扩展模式谐振器的机械耦合 MEMS 滤波器
IF 5.1 4区 物理与天体物理
Journal of Semiconductors Pub Date : 2024-07-31 DOI: 10.1088/1674-4926/24050007
Wei Wang, Wenli Liu, Junyuan Zhao, Bo Niu, Zeyu Wu, Yinfang Zhu, Jinling Yang and Fuhua Yang
{"title":"A mechanically coupled MEMS filter with high-Q width extensional mode resonators","authors":"Wei Wang, Wenli Liu, Junyuan Zhao, Bo Niu, Zeyu Wu, Yinfang Zhu, Jinling Yang and Fuhua Yang","doi":"10.1088/1674-4926/24050007","DOIUrl":"https://doi.org/10.1088/1674-4926/24050007","url":null,"abstract":"This work presents a novel radio frequency (RF) narrowband Si micro-electro-mechanical systems (MEMS) filter based on capacitively transduced slotted width extensional mode (WEM) resonators. The flexibility of the plate leads to multiple modes near the target frequency. The high Q-factor resonators of around 100 000 enable narrow bandwidth filters with small size and simplified design. The 1-wavelength and 2-wavelength WEMs were first developed as a pair of coupled modes to form a passband. To reduce bandwidth, two plates are coupled with a λ-length coupling beam. The 79.69 MHz coupled plate filter (CPF) achieved a narrow bandwidth of 8.8 kHz, corresponding to a tiny 0.011%. The CPF exhibits an impressive 34.84 dB stopband rejection and 7.82 dB insertion loss with near-zero passband ripple. In summary, the RF MEMS filter presented in this work shows promising potential for application in RF transceiver front-ends.","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":"77 1","pages":""},"PeriodicalIF":5.1,"publicationDate":"2024-07-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141934469","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Physico−mathematical model of the voltage−current characteristics of light-emitting diodes with quantum wells based on the Sah−Noyce−Shockley recombination mechanism 基于 Sah-Noyce-Shockley 重组机制的量子阱发光二极管电压-电流特性物理数学模型
IF 5.1 4区 物理与天体物理
Journal of Semiconductors Pub Date : 2024-07-31 DOI: 10.1088/1674-4926/23120044
Fedor I. Manyakhin, Dmitry O. Varlamov, Vladimir P. Krylov, Lyudmila O. Morketsova, Arkady A. Skvortsov and Vladimir K. Nikolaev
{"title":"Physico−mathematical model of the voltage−current characteristics of light-emitting diodes with quantum wells based on the Sah−Noyce−Shockley recombination mechanism","authors":"Fedor I. Manyakhin, Dmitry O. Varlamov, Vladimir P. Krylov, Lyudmila O. Morketsova, Arkady A. Skvortsov and Vladimir K. Nikolaev","doi":"10.1088/1674-4926/23120044","DOIUrl":"https://doi.org/10.1088/1674-4926/23120044","url":null,"abstract":"Herein, a physical and mathematical model of the voltage−current characteristics of a p−n heterostructure with quantum wells (QWs) is prepared using the Sah−Noyce−Shockley (SNS) recombination mechanism to show the SNS recombination rate of the correction function of the distribution of QWs in the space charge region of diode configuration. A comparison of the model voltage−current characteristics (VCCs) with the experimental ones reveals their adequacy. The technological parameters of the structure of the VCC model are determined experimentally using a nondestructive capacitive approach for determining the impurity distribution profile in the active region of the diode structure with a profile depth resolution of up to 10 Å. The correction function in the expression of the recombination rate shows the possibility of determining the derivative of the VCCs of structures with QWs with a nonideality factor of up to 4.","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":"1 1","pages":""},"PeriodicalIF":5.1,"publicationDate":"2024-07-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141934515","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Self-powered UVC detectors based on α-Ga2O3 with enchanted speed performance 基于 α-Ga2O3 的自供电紫外线探测器，速度性能令人着迷
IF 5.1 4区 物理与天体物理
Journal of Semiconductors Pub Date : 2024-07-31 DOI: 10.1088/1674-4926/24020001
Aleksei Almaev, Alexander Tsymbalov, Bogdan Kushnarev, Vladimir Nikolaev, Alexei Pechnikov, Mikhail Scheglov and Andrei Chikiryaka
{"title":"Self-powered UVC detectors based on α-Ga2O3 with enchanted speed performance","authors":"Aleksei Almaev, Alexander Tsymbalov, Bogdan Kushnarev, Vladimir Nikolaev, Alexei Pechnikov, Mikhail Scheglov and Andrei Chikiryaka","doi":"10.1088/1674-4926/24020001","DOIUrl":"https://doi.org/10.1088/1674-4926/24020001","url":null,"abstract":"Detectors were developed for detecting irradiation in the short-wavelength ultraviolet (UVC) interval using high-quality single-crystalline α-Ga2O3 films with Pt interdigital contacts. The films of α-Ga2O3 were grown on planar sapphire substrates with c-plane orientation using halide vapor phase epitaxy. The spectral dependencies of the photo to dark current ratio, responsivity, external quantum efficiency and detectivity of the structures were investigated in the wavelength interval of 200−370 nm. The maximum of photo to dark current ratio, responsivity, external quantum efficiency, and detectivity of the structures were 1.16 × 104 arb. un., 30.6 A/W, 1.65 × 104%, and 6.95 × 1015 Hz0.5·cm/W at a wavelength of 230 nm and an applied voltage of 1 V. The high values of photoelectric properties were due to the internal enhancement of the photoresponse associated with strong hole trapping. The α-Ga2O3 film-based UVC detectors can function in self-powered operation mode due to the built-in electric field at the Pt/α-Ga2O3 interfaces. At a wavelength of 254 nm and zero applied voltage, the structures exhibit a responsivity of 0.13 mA/W and an external quantum efficiency of 6.2 × 10−2%. The UVC detectors based on the α-Ga2O3 films demonstrate high-speed performance with a rise time of 18 ms in self-powered mode.","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":"9 1","pages":""},"PeriodicalIF":5.1,"publicationDate":"2024-07-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141934516","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Review of the SiC LDMOS power device 碳化硅 LDMOS 功率器件回顾
IF 5.1 4区 物理与天体物理
Journal of Semiconductors Pub Date : 2024-07-31 DOI: 10.1088/1674-4926/24010029
Ziwei Hu, Jiafei Yao, Ang Li, Qi Sun, Man Li, Kemeng Yang, Jun Zhang, Jing Chen, Maolin Zhang and Yufeng Guo
{"title":"Review of the SiC LDMOS power device","authors":"Ziwei Hu, Jiafei Yao, Ang Li, Qi Sun, Man Li, Kemeng Yang, Jun Zhang, Jing Chen, Maolin Zhang and Yufeng Guo","doi":"10.1088/1674-4926/24010029","DOIUrl":"https://doi.org/10.1088/1674-4926/24010029","url":null,"abstract":"Silicon carbide (SiC), as a third-generation semiconductor material, possesses exceptional material properties that significantly enhance the performance of power devices. The SiC lateral double-diffused metal–oxide–semiconductor (LDMOS) power devices have undergone continuous optimization, resulting in an increase in breakdown voltage (BV) and ultra-low specific on-resistance (Ron,sp). This paper has summarized the structural optimizations and experimental progress of SiC LDMOS power devices, including the trench-gate technology, reduced surface field (RESURF) technology, doping technology, junction termination techniques and so on. The paper is aimed at enhancing the understanding of the operational mechanisms and providing guidelines for the further development of SiC LDMOS power devices.","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":"41 1","pages":""},"PeriodicalIF":5.1,"publicationDate":"2024-07-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141934520","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Embedded high-quality ternary GaAs1−x Sb x quantum dots in GaAs nanowires by molecular-beam epitaxy 通过分子束外延在砷化镓纳米线中嵌入高质量的 GaAs1-x Sb x 三元量子点
IF 5.1 4区 物理与天体物理
Journal of Semiconductors Pub Date : 2024-07-31 DOI: 10.1088/1674-4926/24030038
Xiyu Hou, Lianjun Wen, Fengyue He, Ran Zhuo, Lei Liu, Hailong Wang, Qing Zhong, Dong Pan and Jianhua Zhao
{"title":"Embedded high-quality ternary GaAs1−x Sb x quantum dots in GaAs nanowires by molecular-beam epitaxy","authors":"Xiyu Hou, Lianjun Wen, Fengyue He, Ran Zhuo, Lei Liu, Hailong Wang, Qing Zhong, Dong Pan and Jianhua Zhao","doi":"10.1088/1674-4926/24030038","DOIUrl":"https://doi.org/10.1088/1674-4926/24030038","url":null,"abstract":"Semiconductor quantum dots are promising candidates for preparing high-performance single photon sources. A basic requirement for this application is realizing the controlled growth of high-quality semiconductor quantum dots. Here, we report the growth of embedded GaAs1−xSbx quantum dots in GaAs nanowires by molecular-beam epitaxy. It is found that the size of the GaAs1−xSbx quantum dot can be well-defined by the GaAs nanowire. Energy dispersive spectroscopy analyses show that the antimony content x can be up to 0.36 by tuning the growth temperature. All GaAs1−xSbx quantum dots exhibit a pure zinc-blende phase. In addition, we have developed a new technology to grow GaAs passivation layers on the sidewalls of the GaAs1−xSbx quantum dots. Different from the traditional growth process of the passivation layer, GaAs passivation layers can be grown simultaneously with the growth of the embedded GaAs1−xSbx quantum dots. The spontaneous GaAs passivation layer shows a pure zinc-blende phase due to the strict epitaxial relationship between the quantum dot and the passivation layer. The successful fabrication of embedded high-quality GaAs1−xSbx quantum dots lays the foundation for the realization of GaAs1−xSbx-based single photon sources.","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":"193 1","pages":""},"PeriodicalIF":5.1,"publicationDate":"2024-07-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141934519","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Peripheral carbazole units-decorated MR emitter containing B−N covalent bond for highly efficient green OLEDs with low roll-off 含有 B-N 共价键的外围咔唑单元装饰 MR 发射器，用于制造低滚降的高效绿色 OLED
IF 5.1 4区 物理与天体物理
Journal of Semiconductors Pub Date : 2024-07-31 DOI: 10.1088/1674-4926/24040008
Danrui Wan, Jianping Zhou, Guoyun Meng, Ning Su, Dongdong Zhang, Lian Duan and Junqiao Ding
{"title":"Peripheral carbazole units-decorated MR emitter containing B−N covalent bond for highly efficient green OLEDs with low roll-off","authors":"Danrui Wan, Jianping Zhou, Guoyun Meng, Ning Su, Dongdong Zhang, Lian Duan and Junqiao Ding","doi":"10.1088/1674-4926/24040008","DOIUrl":"https://doi.org/10.1088/1674-4926/24040008","url":null,"abstract":"Boron−nitrogen doped multiple resonance (BN-MR) emitters, characterized by B−N covalent bonds, offer distinctive advantages as pivotal building blocks for facile access to novel MR emitters featuring narrowband spectra and high efficiency. However, there remains a scarcity of exploration concerning synthetic methods and structural derivations to expand the library of novel BN-MR emitters. Herein, we present the synthesis of a BN-MR emitter, tCz[B−N]N, through a one-pot borylation reaction directed by the amine group, achieving an impressive yield of 94%. The emitter is decorated by incorporating two 3,6-di-t-butylcarbazole (tCz) units into a B−N covalent bond doped BN-MR parent molecule via para-C−π−D and para-N−π−D conjugations. This peripheral decoration strategy enhances the reverse intersystem crossing process and shifts the emission band towards the pure green region, peaking at 526 nm with a narrowband full-width at half maximum (FWHM) of 41 nm. Consequently, organic light emitting diodes (OLEDs) employing this emitter achieved a maximum external quantum efficiency (EQEmax) value of 27.7%, with minimal efficiency roll-off. Even at a practical luminance of 1000 cd∙m−2, the device maintains a high EQE value of 24.6%.","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":"86 1","pages":""},"PeriodicalIF":5.1,"publicationDate":"2024-07-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141934468","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Achievable hole concentration at room temperature as a function of Mg concentration for MOCVD-grown p-GaN after sufficient annealing 充分退火后 MOCVD 生长的 p-GaN 在室温下的可实现空穴浓度与镁浓度的函数关系
IF 5.1 4区 物理与天体物理
Journal of Semiconductors Pub Date : 2024-07-31 DOI: 10.1088/1674-4926/24010017
Siyi Huang, Masao Ikeda, Feng Zhang, Minglong Zhang, Jianjun Zhu, Shuming Zhang and Jianping Liu
{"title":"Achievable hole concentration at room temperature as a function of Mg concentration for MOCVD-grown p-GaN after sufficient annealing","authors":"Siyi Huang, Masao Ikeda, Feng Zhang, Minglong Zhang, Jianjun Zhu, Shuming Zhang and Jianping Liu","doi":"10.1088/1674-4926/24010017","DOIUrl":"https://doi.org/10.1088/1674-4926/24010017","url":null,"abstract":"Relationship between the hole concentration at room temperature and the Mg doping concentration in p-GaN grown by MOCVD after sufficient annealing was studied in this paper. Different annealing conditions were applied to obtain sufficient activation for p-GaN samples with different Mg doping ranges. Hole concentration, resistivity and mobility were characterized by room-temperature Hall measurements. The Mg doping concentration and the residual impurities such as H, C, O and Si were measured by secondary ion mass spectroscopy, confirming negligible compensations by the impurities. The hole concentration, resistivity and mobility data are presented as a function of Mg concentration, and are compared with literature data. The appropriate curve relating the Mg doping concentration to the hole concentration is derived using a charge neutrality equation and the ionized-acceptor-density [ ] (cm−3) dependent ionization energy of Mg acceptor was determined as = 184 − 2.66 × 10−5 × [ ]1/3 meV.","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":"27 Pt 4 1","pages":""},"PeriodicalIF":5.1,"publicationDate":"2024-07-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141934517","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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