Physico−mathematical model of the voltage−current characteristics of light-emitting diodes with quantum wells based on the Sah−Noyce−Shockley recombination mechanism

IF 4.8 4区 物理与天体物理 Q2 PHYSICS, CONDENSED MATTER
Fedor I. Manyakhin, Dmitry O. Varlamov, Vladimir P. Krylov, Lyudmila O. Morketsova, Arkady A. Skvortsov and Vladimir K. Nikolaev
{"title":"Physico−mathematical model of the voltage−current characteristics of light-emitting diodes with quantum wells based on the Sah−Noyce−Shockley recombination mechanism","authors":"Fedor I. Manyakhin, Dmitry O. Varlamov, Vladimir P. Krylov, Lyudmila O. Morketsova, Arkady A. Skvortsov and Vladimir K. Nikolaev","doi":"10.1088/1674-4926/23120044","DOIUrl":null,"url":null,"abstract":"Herein, a physical and mathematical model of the voltage−current characteristics of a p−n heterostructure with quantum wells (QWs) is prepared using the Sah−Noyce−Shockley (SNS) recombination mechanism to show the SNS recombination rate of the correction function of the distribution of QWs in the space charge region of diode configuration. A comparison of the model voltage−current characteristics (VCCs) with the experimental ones reveals their adequacy. The technological parameters of the structure of the VCC model are determined experimentally using a nondestructive capacitive approach for determining the impurity distribution profile in the active region of the diode structure with a profile depth resolution of up to 10 Å. The correction function in the expression of the recombination rate shows the possibility of determining the derivative of the VCCs of structures with QWs with a nonideality factor of up to 4.","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":null,"pages":null},"PeriodicalIF":4.8000,"publicationDate":"2024-07-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Semiconductors","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1088/1674-4926/23120044","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
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Abstract

Herein, a physical and mathematical model of the voltage−current characteristics of a p−n heterostructure with quantum wells (QWs) is prepared using the Sah−Noyce−Shockley (SNS) recombination mechanism to show the SNS recombination rate of the correction function of the distribution of QWs in the space charge region of diode configuration. A comparison of the model voltage−current characteristics (VCCs) with the experimental ones reveals their adequacy. The technological parameters of the structure of the VCC model are determined experimentally using a nondestructive capacitive approach for determining the impurity distribution profile in the active region of the diode structure with a profile depth resolution of up to 10 Å. The correction function in the expression of the recombination rate shows the possibility of determining the derivative of the VCCs of structures with QWs with a nonideality factor of up to 4.
基于 Sah-Noyce-Shockley 重组机制的量子阱发光二极管电压-电流特性物理数学模型
本文利用 Sah-Noyce-Shockley (SNS) 重组机制,建立了带有量子阱(QWs)的 p-n 异质结构电压-电流特性的物理和数学模型,以显示 QWs 在二极管配置的空间电荷区分布的校正函数 SNS 重组率。将模型电压-电流特性(VCC)与实验特性进行比较后,发现它们是适当的。VCC 模型结构的技术参数是通过实验确定的,采用无损电容方法确定二极管结构有源区杂质分布轮廓,轮廓深度分辨率高达 10 Å。
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来源期刊
Journal of Semiconductors
Journal of Semiconductors PHYSICS, CONDENSED MATTER-
CiteScore
6.70
自引率
9.80%
发文量
119
期刊介绍: Journal of Semiconductors publishes articles that emphasize semiconductor physics, materials, devices, circuits, and related technology.
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