基于 α-Ga2O3 的自供电紫外线探测器,速度性能令人着迷

IF 4.8 4区 物理与天体物理 Q2 PHYSICS, CONDENSED MATTER
Aleksei Almaev, Alexander Tsymbalov, Bogdan Kushnarev, Vladimir Nikolaev, Alexei Pechnikov, Mikhail Scheglov and Andrei Chikiryaka
{"title":"基于 α-Ga2O3 的自供电紫外线探测器,速度性能令人着迷","authors":"Aleksei Almaev, Alexander Tsymbalov, Bogdan Kushnarev, Vladimir Nikolaev, Alexei Pechnikov, Mikhail Scheglov and Andrei Chikiryaka","doi":"10.1088/1674-4926/24020001","DOIUrl":null,"url":null,"abstract":"Detectors were developed for detecting irradiation in the short-wavelength ultraviolet (UVC) interval using high-quality single-crystalline α-Ga2O3 films with Pt interdigital contacts. The films of α-Ga2O3 were grown on planar sapphire substrates with c-plane orientation using halide vapor phase epitaxy. The spectral dependencies of the photo to dark current ratio, responsivity, external quantum efficiency and detectivity of the structures were investigated in the wavelength interval of 200−370 nm. The maximum of photo to dark current ratio, responsivity, external quantum efficiency, and detectivity of the structures were 1.16 × 104 arb. un., 30.6 A/W, 1.65 × 104%, and 6.95 × 1015 Hz0.5·cm/W at a wavelength of 230 nm and an applied voltage of 1 V. The high values of photoelectric properties were due to the internal enhancement of the photoresponse associated with strong hole trapping. The α-Ga2O3 film-based UVC detectors can function in self-powered operation mode due to the built-in electric field at the Pt/α-Ga2O3 interfaces. At a wavelength of 254 nm and zero applied voltage, the structures exhibit a responsivity of 0.13 mA/W and an external quantum efficiency of 6.2 × 10−2%. The UVC detectors based on the α-Ga2O3 films demonstrate high-speed performance with a rise time of 18 ms in self-powered mode.","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":"9 1","pages":""},"PeriodicalIF":4.8000,"publicationDate":"2024-07-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Self-powered UVC detectors based on α-Ga2O3 with enchanted speed performance\",\"authors\":\"Aleksei Almaev, Alexander Tsymbalov, Bogdan Kushnarev, Vladimir Nikolaev, Alexei Pechnikov, Mikhail Scheglov and Andrei Chikiryaka\",\"doi\":\"10.1088/1674-4926/24020001\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Detectors were developed for detecting irradiation in the short-wavelength ultraviolet (UVC) interval using high-quality single-crystalline α-Ga2O3 films with Pt interdigital contacts. The films of α-Ga2O3 were grown on planar sapphire substrates with c-plane orientation using halide vapor phase epitaxy. The spectral dependencies of the photo to dark current ratio, responsivity, external quantum efficiency and detectivity of the structures were investigated in the wavelength interval of 200−370 nm. The maximum of photo to dark current ratio, responsivity, external quantum efficiency, and detectivity of the structures were 1.16 × 104 arb. un., 30.6 A/W, 1.65 × 104%, and 6.95 × 1015 Hz0.5·cm/W at a wavelength of 230 nm and an applied voltage of 1 V. The high values of photoelectric properties were due to the internal enhancement of the photoresponse associated with strong hole trapping. The α-Ga2O3 film-based UVC detectors can function in self-powered operation mode due to the built-in electric field at the Pt/α-Ga2O3 interfaces. At a wavelength of 254 nm and zero applied voltage, the structures exhibit a responsivity of 0.13 mA/W and an external quantum efficiency of 6.2 × 10−2%. The UVC detectors based on the α-Ga2O3 films demonstrate high-speed performance with a rise time of 18 ms in self-powered mode.\",\"PeriodicalId\":17038,\"journal\":{\"name\":\"Journal of Semiconductors\",\"volume\":\"9 1\",\"pages\":\"\"},\"PeriodicalIF\":4.8000,\"publicationDate\":\"2024-07-31\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Semiconductors\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.1088/1674-4926/24020001\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"PHYSICS, CONDENSED MATTER\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Semiconductors","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1088/1674-4926/24020001","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
引用次数: 0

摘要

利用带有铂相互接触的高质量单晶α-Ga2O3 薄膜,开发了用于检测短波长紫外线(UVC)区间辐照的探测器。α-Ga2O3薄膜是利用卤化物气相外延技术在具有c平面取向的平面蓝宝石衬底上生长的。在 200-370 nm 波长范围内,研究了该结构的光暗电流比、响应度、外部量子效率和检测度的光谱依赖性。在波长为 230 nm、外加电压为 1 V 时,该结构的光暗电流比、响应率、外部量子效率和检测率分别达到 1.16 × 104 arb.由于 Pt/α-Ga2O3 界面的内置电场,基于 α-Ga2O3 薄膜的紫外线检测器可在自供电运行模式下工作。在波长为 254 nm、外加电压为零的条件下,该结构的响应率为 0.13 mA/W,外部量子效率为 6.2 × 10-2%。基于 α-Ga2O3 薄膜的紫外线检测器具有高速性能,在自供电模式下上升时间为 18 毫秒。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Self-powered UVC detectors based on α-Ga2O3 with enchanted speed performance
Detectors were developed for detecting irradiation in the short-wavelength ultraviolet (UVC) interval using high-quality single-crystalline α-Ga2O3 films with Pt interdigital contacts. The films of α-Ga2O3 were grown on planar sapphire substrates with c-plane orientation using halide vapor phase epitaxy. The spectral dependencies of the photo to dark current ratio, responsivity, external quantum efficiency and detectivity of the structures were investigated in the wavelength interval of 200−370 nm. The maximum of photo to dark current ratio, responsivity, external quantum efficiency, and detectivity of the structures were 1.16 × 104 arb. un., 30.6 A/W, 1.65 × 104%, and 6.95 × 1015 Hz0.5·cm/W at a wavelength of 230 nm and an applied voltage of 1 V. The high values of photoelectric properties were due to the internal enhancement of the photoresponse associated with strong hole trapping. The α-Ga2O3 film-based UVC detectors can function in self-powered operation mode due to the built-in electric field at the Pt/α-Ga2O3 interfaces. At a wavelength of 254 nm and zero applied voltage, the structures exhibit a responsivity of 0.13 mA/W and an external quantum efficiency of 6.2 × 10−2%. The UVC detectors based on the α-Ga2O3 films demonstrate high-speed performance with a rise time of 18 ms in self-powered mode.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
Journal of Semiconductors
Journal of Semiconductors PHYSICS, CONDENSED MATTER-
CiteScore
6.70
自引率
9.80%
发文量
119
期刊介绍: Journal of Semiconductors publishes articles that emphasize semiconductor physics, materials, devices, circuits, and related technology.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信