Journal of Semiconductors最新文献_第3页

A highly sensitive ratiometric near-infrared nanosensor based on erbium-hyperdoped silicon quantum dots for iron(Ⅲ) detection 基于铒-超掺杂硅量子点的高灵敏近红外比率测量法纳米传感器，用于铁(Ⅲ)检测

IF 5.1 4区物理与天体物理

Journal of Semiconductors Pub Date : 2024-07-31 DOI: 10.1088/1674-4926/24020018

Kun Wang, Wenxuan Lai, Zhenyi Ni, Deren Yang and Xiaodong Pi

引用次数: 0

A 128 × 128 SPAD LiDAR sensor with column-parallel 25 ps resolution TA-ADCs 配备列并行 25 ps 分辨率 TA-ADC 的 128 × 128 SPAD 激光雷达传感器

IF 5.1 4区物理与天体物理

Journal of Semiconductors Pub Date : 2024-07-31 DOI: 10.1088/1674-4926/24030019

Na Tian, Zhe Wang, Kai Ma, Xu Yang, Nan Qi, Jian Liu, Nanjian Wu, Runjiang Dou and Liyuan Liu

引用次数: 0

Enhanced thermal emission from metal-free, fully epitaxial structures with epsilon-near-zero InAs layers 具有ε近零砷化镓层的无金属全外延结构的热辐射增强效应

IF 5.1 4区物理与天体物理

Journal of Semiconductors Pub Date : 2024-02-01 DOI: 10.1088/1674-4926/45/2/022101

Karolis Stašys, Andrejus Geižutis, Jan Devenson

引用次数: 0

Controllable thermal rectification design for buildings based on phase change composites 基于相变复合材料的建筑物可控热整流设计

IF 5.1 4区物理与天体物理

Journal of Semiconductors Pub Date : 2024-02-01 DOI: 10.1088/1674-4926/45/2/022301

Hengbin Ding, Xiaoshi Li, Tianhang Li, Xiaoyong Zhao, He Tian

{"title":"Controllable thermal rectification design for buildings based on phase change composites","authors":"Hengbin Ding, Xiaoshi Li, Tianhang Li, Xiaoyong Zhao, He Tian","doi":"10.1088/1674-4926/45/2/022301","DOIUrl":"https://doi.org/10.1088/1674-4926/45/2/022301","url":null,"abstract":"Phase-change material (PCM) is widely used in thermal management due to their unique thermal behavior. However, related research in thermal rectifier is mainly focused on exploring the principles at the fundamental device level, which results in a gap to real applications. Here, we propose a controllable thermal rectification design towards building applications through the direct adhesion of composite thermal rectification material (TRM) based on PCM and reduced graphene oxide (rGO) aerogel to ordinary concrete walls (CWs). The design is evaluated in detail by combining experiments and finite element analysis. It is found that, TRM can regulate the temperature difference on both sides of the TRM/CWs system by thermal rectification. The difference in two directions reaches to 13.8 K at the heat flow of 80 W/m2. In addition, the larger the change of thermal conductivity before and after phase change of TRM is, the more effective it is for regulating temperature difference in two directions. The stated technology has a wide range of applications for the thermal energy control in buildings with specific temperature requirements.","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":"42 1","pages":""},"PeriodicalIF":5.1,"publicationDate":"2024-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139761890","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Efficient flexible dye-sensitized solar cells from rear illumination based on different morphologies of titanium dioxide photoanode 基于不同形态二氧化钛光阳极的高效柔性背照式染料敏化太阳能电池

IF 5.1 4区物理与天体物理

Journal of Semiconductors Pub Date : 2024-02-01 DOI: 10.1088/1674-4926/45/2/022801

Zhe He, Gentian Yue, Yueyue Gao, Chen Dong, Furui Tan

引用次数: 0

Progress in efficient doping of Al-rich AlGaN 高效掺杂富铝氮化铝的进展

IF 5.1 4区物理与天体物理

Journal of Semiconductors Pub Date : 2024-02-01 DOI: 10.1088/1674-4926/45/2/021501

Jiaming Wang, Fujun Xu, Lisheng Zhang, Jing Lang, Xuzhou Fang, Ziyao Zhang, Xueqi Guo, Chen Ji, Chengzhi Ji, Fuyun Tan, Xuelin Yang, Xiangning Kang, Zhixin Qin, Ning Tang, Xinqiang Wang, Weikun Ge, Bo Shen

{"title":"Progress in efficient doping of Al-rich AlGaN","authors":"Jiaming Wang, Fujun Xu, Lisheng Zhang, Jing Lang, Xuzhou Fang, Ziyao Zhang, Xueqi Guo, Chen Ji, Chengzhi Ji, Fuyun Tan, Xuelin Yang, Xiangning Kang, Zhixin Qin, Ning Tang, Xinqiang Wang, Weikun Ge, Bo Shen","doi":"10.1088/1674-4926/45/2/021501","DOIUrl":"https://doi.org/10.1088/1674-4926/45/2/021501","url":null,"abstract":"The development of semiconductors is always accompanied by the progress in controllable doping techniques. Taking AlGaN-based ultraviolet (UV) emitters as an example, despite a peak wall-plug efficiency of 15.3% at the wavelength of 275 nm, there is still a huge gap in comparison with GaN-based visible light-emitting diodes (LEDs), mainly attributed to the inefficient doping of AlGaN with increase of the Al composition. First, p-doping of Al-rich AlGaN is a long-standing challenge and the low hole concentration seriously restricts the carrier injection efficiency. Although p-GaN cladding layers are widely adopted as a compromise, the high injection barrier of holes as well as the inevitable loss of light extraction cannot be neglected. While in terms of n-doping the main issue is the degradation of the electrical property when the Al composition exceeds 80%, resulting in a low electrical efficiency in sub-250 nm UV-LEDs. This review summarizes the recent advances and outlines the major challenges in the efficient doping of Al-rich AlGaN, meanwhile the corresponding approaches pursued to overcome the doping issues are discussed in detail.","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":"60 1","pages":""},"PeriodicalIF":5.1,"publicationDate":"2024-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139761807","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Controllable step-flow growth of GaN on patterned freestanding substrate 图案化独立衬底上氮化镓的可控阶跃流生长

IF 5.1 4区物理与天体物理

Journal of Semiconductors Pub Date : 2024-02-01 DOI: 10.1088/1674-4926/45/2/022501

Peng Wu, Jianping Liu, Lei Hu, Xiaoyu Ren, Aiqin Tian, Wei Zhou, Fan Zhang, Xuan Li, Masao Ikeda, Hui Yang

引用次数: 0

Two-step growth of β-Ga2O3 on c-plane sapphire using MOCVD for solar-blind photodetector 利用 MOCVD 技术在 c 平面蓝宝石上两步生长β-Ga2O3，用于日盲式光电探测器

IF 5.1 4区物理与天体物理

Journal of Semiconductors Pub Date : 2024-02-01 DOI: 10.1088/1674-4926/45/2/022502

Peipei Ma, Jun Zheng, Xiangquan Liu, Zhi Liu, Yuhua Zuo, Buwen Cheng

{"title":"Two-step growth of β-Ga2O3 on c-plane sapphire using MOCVD for solar-blind photodetector","authors":"Peipei Ma, Jun Zheng, Xiangquan Liu, Zhi Liu, Yuhua Zuo, Buwen Cheng","doi":"10.1088/1674-4926/45/2/022502","DOIUrl":"https://doi.org/10.1088/1674-4926/45/2/022502","url":null,"abstract":"In this work, a two-step metal organic chemical vapor deposition (MOCVD) method was applied for growing <italic toggle=\"yes\">β</italic>-Ga2O3 film on <italic toggle=\"yes\">c</italic>-plane sapphire. Optimized buffer layer growth temperature (<italic toggle=\"yes\">T</italic>\u0000B) was found at 700 °C and the <italic toggle=\"yes\">β</italic>-Ga2O3 film with full width at half maximum (FWHM) of 0.66° was achieved. A metal−semiconductor−metal (MSM) solar-blind photodetector (PD) was fabricated based on the <italic toggle=\"yes\">β</italic>-Ga2O3 film. Ultrahigh responsivity of 1422 A/W @ 254 nm and photo-to-dark current ratio (PDCR) of 106 at 10 V bias were obtained. The detectivity of 2.5 × 1015 Jones proved that the photodetector has outstanding performance in detecting weak signals. Moreover, the photodetector exhibited superior wavelength selectivity with rejection ratio (<italic toggle=\"yes\">R</italic>\u0000250 nm/<italic toggle=\"yes\">R</italic>\u0000400 nm) of 105. These results indicate that the two-step method is a promising approach for preparation of high-quality <italic toggle=\"yes\">β</italic>-Ga2O3 films for high-performance solar-blind photodetectors.","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":"6 1","pages":""},"PeriodicalIF":5.1,"publicationDate":"2024-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139762016","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

An advanced theoretical approach to study super-multiperiod superlattices: theory vs experiments 研究超多周期超晶格的先进理论方法：理论与实验

IF 5.1 4区物理与天体物理

Journal of Semiconductors Pub Date : 2024-02-01 DOI: 10.1088/1674-4926/45/2/022701

Alexander Sergeevich Dashkov, Semyon Andreevich Khakhulin, Dmitrii Alekseevich Shapran, Gennadii Fedorovich Glinskii, Nikita Andreevich Kostromin, Alexander Leonidovich Vasiliev, Sergey Nikolayevich Yakunin, Oleg Sergeevich Komkov, Evgeniy Viktorovich Pirogov, Maxim Sergeevich Sobolev, Leonid Ivanovich Goray, Alexei Dmitrievich Bouravleuv

{"title":"An advanced theoretical approach to study super-multiperiod superlattices: theory vs experiments","authors":"Alexander Sergeevich Dashkov, Semyon Andreevich Khakhulin, Dmitrii Alekseevich Shapran, Gennadii Fedorovich Glinskii, Nikita Andreevich Kostromin, Alexander Leonidovich Vasiliev, Sergey Nikolayevich Yakunin, Oleg Sergeevich Komkov, Evgeniy Viktorovich Pirogov, Maxim Sergeevich Sobolev, Leonid Ivanovich Goray, Alexei Dmitrievich Bouravleuv","doi":"10.1088/1674-4926/45/2/022701","DOIUrl":"https://doi.org/10.1088/1674-4926/45/2/022701","url":null,"abstract":"A new theoretical method to study super-multiperiod superlattices has been developed. The method combines the precision of the 8-band <italic toggle=\"yes\">kp</italic>-method with the flexibility of the shooting method and the Monte Carlo approach. This method was applied to examine the finest quality samples of super-multiperiod Al0.3Ga0.7As/GaAs superlattices grown by molecular beam epitaxy. The express photoreflectance spectroscopy method was utilized to validate the proposed theoretical method. For the first time, the accurate theoretical analysis of the energy band diagram of super-multiperiod superlattices with experimental verification has been conducted. The proposed approach highly accurately determines transition peak positions and enables the calculation of the energy band diagram, transition energies, relaxation rates, and gain estimation. It has achieved a remarkably low 5% error compared to the commonly used method, which typically results in a 25% error, and allowed to recover the superlattice parameters. The retrieved intrinsic parameters of the samples aligned with XRD data and growth parameters. The proposed method also accurately predicted the escape of the second energy level for quantum well thicknesses less than 5 nm, as was observed in photoreflectance experiments. The new designs of THz light-emitting devices operating at room temperature were suggested by the developed method.","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":"3 1","pages":""},"PeriodicalIF":5.1,"publicationDate":"2024-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139761810","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Research progress of alkaline earth metal iron-based oxides as anodes for lithium-ion batteries 作为锂离子电池阳极的碱土金属铁基氧化物的研究进展

IF 5.1 4区物理与天体物理

Journal of Semiconductors Pub Date : 2024-02-01 DOI: 10.1088/1674-4926/45/2/021801

Mingyuan Ye, Xiaorui Hao, Jinfeng Zeng, Lin Li, Pengfei Wang, Chenglin Zhang, Li Liu, Fanian Shi, Yuhan Wu

引用次数: 0