Journal of Semiconductors最新文献_第4页

11.2 W/mm power density AlGaN/GaN high electron-mobility transistors on a GaN substrate 氮化镓衬底上的 11.2 W/mm 功率密度氮化镓/氮化镓高电子迁移率晶体管

IF 5.1 4区物理与天体物理

Journal of Semiconductors Pub Date : 2024-01-01 DOI: 10.1088/1674-4926/45/1/012501

Yansheng Hu, Yuangang Wang, Wei Wang, Yuanjie Lv, Hongyu Guo, Zhirong Zhang, Hao Yu, Xubo Song, Xingye zhou, Tingting Han, Shaobo Dun, Hongyu Liu, Aimin Bu, Zhihong Feng

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GaN based ultraviolet laser diodes 基于氮化镓的紫外激光二极管

IF 5.1 4区物理与天体物理

Journal of Semiconductors Pub Date : 2024-01-01 DOI: 10.1088/1674-4926/45/1/011501

Jing Yang, Degang Zhao, Zongshun Liu, Yujie Huang, Baibin Wang, Xiaowei Wang, Yuheng Zhang, Zhenzhuo Zhang, Feng Liang, Lihong Duan, Hai Wang, Yongsheng Shi

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240 nm AlGaN-based deep ultraviolet micro-LEDs: size effect versus edge effect 240 纳米氮化铝基深紫色微型发光二极管：尺寸效应与边缘效应

IF 5.1 4区物理与天体物理

Journal of Semiconductors Pub Date : 2024-01-01 DOI: 10.1088/1674-4926/45/1/012504

Shunpeng Lu, Jiangxiao Bai, Hongbo Li, Ke Jiang, Jianwei Ben, Shanli Zhang, Zi-Hui Zhang, Xiaojuan Sun, Dabing Li

{"title":"240 nm AlGaN-based deep ultraviolet micro-LEDs: size effect versus edge effect","authors":"Shunpeng Lu, Jiangxiao Bai, Hongbo Li, Ke Jiang, Jianwei Ben, Shanli Zhang, Zi-Hui Zhang, Xiaojuan Sun, Dabing Li","doi":"10.1088/1674-4926/45/1/012504","DOIUrl":"https://doi.org/10.1088/1674-4926/45/1/012504","url":null,"abstract":"240 nm AlGaN-based micro-LEDs with different sizes are designed and fabricated. Then, the external quantum efficiency (EQE) and light extraction efficiency (LEE) are systematically investigated by comparing size and edge effects. Here, it is revealed that the peak optical output power increases by 81.83% with the size shrinking from 50.0 to 25.0 <italic toggle=\"yes\">μ</italic>m. Thereinto, the LEE increases by 26.21% and the LEE enhancement mainly comes from the sidewall light extraction. Most notably, transverse-magnetic (TM) mode light intensifies faster as the size shrinks due to the tilted mesa side-wall and Al reflector design. However, when it turns to 12.5 <italic toggle=\"yes\">μ</italic>m sized micro-LEDs, the output power is lower than 25.0 <italic toggle=\"yes\">μ</italic>m sized ones. The underlying mechanism is that even though protected by SiO2 passivation, the edge effect which leads to current leakage and Shockley-Read-Hall (SRH) recombination deteriorates rapidly with the size further shrinking. Moreover, the ratio of the p-contact area to mesa area is much lower, which deteriorates the p-type current spreading at the mesa edge. These findings show a role of thumb for the design of high efficiency micro-LEDs with wavelength below 250 nm, which will pave the way for wide applications of deep ultraviolet (DUV) micro-LEDs.","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":"19 1","pages":""},"PeriodicalIF":5.1,"publicationDate":"2024-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139509722","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Anisotropic etching mechanisms of 4H-SiC: Experimental and first-principles insights 4H-SiC 的各向异性蚀刻机制：实验和第一原理的启示

IF 5.1 4区物理与天体物理

Journal of Semiconductors Pub Date : 2024-01-01 DOI: 10.1088/1674-4926/45/1/012502

Guang Yang, Lingbo Xu, Can Cui, Xiaodong Pi, Deren Yang, Rong Wang

{"title":"Anisotropic etching mechanisms of 4H-SiC: Experimental and first-principles insights","authors":"Guang Yang, Lingbo Xu, Can Cui, Xiaodong Pi, Deren Yang, Rong Wang","doi":"10.1088/1674-4926/45/1/012502","DOIUrl":"https://doi.org/10.1088/1674-4926/45/1/012502","url":null,"abstract":"Molten-alkali etching has been widely used to reveal dislocations in 4H silicon carbide (4H-SiC), which has promoted the identification and statistics of dislocation density in 4H-SiC single crystals. However, the etching mechanism of 4H-SiC is limited misunderstood. In this letter, we reveal the anisotropic etching mechanism of the Si face and C face of 4H-SiC by combining molten-KOH etching, X-ray photoelectron spectroscopy (XPS) and first-principles investigations. The activation energies for the molten-KOH etching of the C face and Si face of 4H-SiC are calculated to be 25.09 and 35.75 kcal/mol, respectively. The molten-KOH etching rate of the C face is higher than the Si face. Combining XPS analysis and first-principles calculations, we find that the molten-KOH etching of 4H-SiC is proceeded by the cycling of the oxidation of 4H-SiC by the dissolved oxygen and the removal of oxides by molten KOH. The faster etching rate of the C face is caused by the fact that the oxides on the C face are unstable, and easier to be removed with molten alkali, rather than the C face being easier to be oxidized.","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":"70 1","pages":""},"PeriodicalIF":5.1,"publicationDate":"2024-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139509723","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Stretchable organic electrochemical transistors with micro-/nano-structures 具有微/纳米结构的可拉伸有机电化学晶体管

IF 5.1 4区物理与天体物理

Journal of Semiconductors Pub Date : 2023-12-01 DOI: 10.1088/1674-4926/44/12/120201

Jianhua Chen, Yiming Sun, Jieting Sun, Junqiao Ding, Liming Ding

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A review on GaN HEMTs: nonlinear mechanisms and improvement methods GaN HEMT 综述：非线性机制和改进方法

IF 5.1 4区物理与天体物理

Journal of Semiconductors Pub Date : 2023-12-01 DOI: 10.1088/1674-4926/44/12/121801

Chen-Chung Du, Ran Ye, Xiaolong Cai, Xiangyang Duan, Haijun Liu, Yu Zhang, Gang Qiu, Minhan Mi

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Multiple SiGe/Si layers epitaxy and SiGe selective etching for vertically stacked DRAM 用于垂直堆叠 DRAM 的多硅锗/硅层外延和硅锗选择性蚀刻技术

IF 5.1 4区物理与天体物理

Journal of Semiconductors Pub Date : 2023-12-01 DOI: 10.1088/1674-4926/44/12/124101

Zhenzhen Kong, Hongxiao Lin, Hailing Wang, Yanpeng Song, Junjie Li, Xiaomeng Liu, Anyan Du, Yuanhao Miao, Yiwen Zhang, Yuhui Ren, Chen Li, Jiahan Yu, Jinbiao Liu, Jingxiong Liu, Qinzhu Zhang, Jianfeng Gao, Huihui Li, Xiangsheng Wang, Junfeng Li, Henry H. Radamson, Chao Zhao, Tianchun Ye, Guilei Wang

{"title":"Multiple SiGe/Si layers epitaxy and SiGe selective etching for vertically stacked DRAM","authors":"Zhenzhen Kong, Hongxiao Lin, Hailing Wang, Yanpeng Song, Junjie Li, Xiaomeng Liu, Anyan Du, Yuanhao Miao, Yiwen Zhang, Yuhui Ren, Chen Li, Jiahan Yu, Jinbiao Liu, Jingxiong Liu, Qinzhu Zhang, Jianfeng Gao, Huihui Li, Xiangsheng Wang, Junfeng Li, Henry H. Radamson, Chao Zhao, Tianchun Ye, Guilei Wang","doi":"10.1088/1674-4926/44/12/124101","DOIUrl":"https://doi.org/10.1088/1674-4926/44/12/124101","url":null,"abstract":"Fifteen periods of Si/Si0.7Ge0.3 multilayers (MLs) with various SiGe thicknesses are grown on a 200 mm Si substrate using reduced pressure chemical vapor deposition (RPCVD). Several methods were utilized to characterize and analyze the ML structures. The high resolution transmission electron microscopy (HRTEM) results show that the ML structure with 20 nm Si0.7Ge0.3 features the best crystal quality and no defects are observed. Stacked Si0.7Ge0.3 ML structures etched by three different methods were carried out and compared, and the results show that they have different selectivities and morphologies. In this work, the fabrication process influences on Si/SiGe MLs are studied and there are no significant effects on the Si layers, which are the channels in lateral gate all around field effect transistor (L-GAAFET) devices. For vertically-stacked dynamic random access memory (VS-DRAM), it is necessary to consider the dislocation caused by strain accumulation and stress release after the number of stacked layers exceeds the critical thickness. These results pave the way for the manufacture of high-performance multivertical-stacked Si nanowires, nanosheet L-GAAFETs, and DRAM devices.","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":"4 1","pages":""},"PeriodicalIF":5.1,"publicationDate":"2023-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139761869","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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High-temperature annealing of ( ) β-Ga2O3 substrates for reducing structural defects after diamond sawing 对 ( ) β-Ga2O3 衬底进行高温退火，以减少金刚石锯切后的结构缺陷

IF 5.1 4区物理与天体物理

Journal of Semiconductors Pub Date : 2023-12-01 DOI: 10.1088/1674-4926/44/12/122801

Pavel Butenko, Michael Boiko, Mikhail Sharkov, Aleksei Almaev, Aleksnder Kitsay, Vladimir Krymov, Anton Zarichny, Vladimir Nikolaev

{"title":"High-temperature annealing of ( ) β-Ga2O3 substrates for reducing structural defects after diamond sawing","authors":"Pavel Butenko, Michael Boiko, Mikhail Sharkov, Aleksei Almaev, Aleksnder Kitsay, Vladimir Krymov, Anton Zarichny, Vladimir Nikolaev","doi":"10.1088/1674-4926/44/12/122801","DOIUrl":"https://doi.org/10.1088/1674-4926/44/12/122801","url":null,"abstract":"A commercial epi-ready (<inline-formula>\u0000<tex-math><?CDATA $ {bar 2}01 $?></tex-math>\u0000<inline-graphic xlink:href=\"jos_44_12_122801_M2.jpg\" xlink:type=\"simple\"></inline-graphic>\u0000</inline-formula>) <italic toggle=\"yes\">β</italic>-Ga2O3 wafer was investigated upon diamond sawing into pieces measuring 2.5 × 3 mm2. The defect structure and crystallinity in the cut samples has been studied by X-ray diffraction and a selective wet etching technique. The density of defects was estimated from the average value of etch pits calculated, including near-edge regions, and was obtained close to 109 cm−2. Blocks with lattice orientation deviated by angles of 1−3 arcmin, as well as non-stoichiometric fractions with a relative strain about (1.0−1.5) × 10−4 in the [<inline-formula>\u0000<tex-math><?CDATA $ {bar 2}01 $?></tex-math>\u0000<inline-graphic xlink:href=\"jos_44_12_122801_M3.jpg\" xlink:type=\"simple\"></inline-graphic>\u0000</inline-formula>] direction, were found. Crystal perfection was shown to decrease significantly towards the cutting lines of the samples. To reduce the number of structural defects and increase the crystal perfection of the samples via increasing defect motion mobility, the thermal annealing was employed. Polygonization and formation of a mosaic structure coupled with dislocation wall appearance upon 3 h of annealing at 1100 °C was observed. The fractions characterized by non-stoichiometry phases and the block deviation disappeared. The annealing for 11 h improved the homogeneity and perfection in the crystals. The average density of the etch pits dropped down significantly to 8 × 106 cm−2.","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":"185 1","pages":""},"PeriodicalIF":5.1,"publicationDate":"2023-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140613427","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Demonstration of a manufacturable SOT-MRAM multiplexer array towards industrial applications 面向工业应用的可制造 SOT-MRAM 多路复用器阵列演示

IF 5.1 4区物理与天体物理

Journal of Semiconductors Pub Date : 2023-12-01 DOI: 10.1088/1674-4926/44/12/122501

Chuanpeng Jiang, Jinhao Li, Hongchao Zhang, Shiyang Lu, Pengbin Li, Chao Wang, Zhongkui Zhang, Zhengyi Hou, Xu Liu, Jiagao Feng, He Zhang, Hui Jin, Gefei Wang, Hongxi Liu, Kaihua Cao, Zhaohao Wang, Weisheng Zhao

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Controllable growth of wafer-scale PdS and PdS2 nanofilms via chemical vapor deposition combined with an electron beam evaporation technique 通过化学气相沉积结合电子束蒸发技术实现晶圆级 PdS 和 PdS2 纳米薄膜的可控生长

IF 5.1 4区物理与天体物理

Journal of Semiconductors Pub Date : 2023-12-01 DOI: 10.1088/1674-4926/44/12/122001

Hui Gao, Hongyi Zhou, Yulong Hao, Guoliang Zhou, Huan Zhou, Fenglin Gao, Jinbiao Xiao, Pinghua Tang, Guolin Hao

{"title":"Controllable growth of wafer-scale PdS and PdS2 nanofilms via chemical vapor deposition combined with an electron beam evaporation technique","authors":"Hui Gao, Hongyi Zhou, Yulong Hao, Guoliang Zhou, Huan Zhou, Fenglin Gao, Jinbiao Xiao, Pinghua Tang, Guolin Hao","doi":"10.1088/1674-4926/44/12/122001","DOIUrl":"https://doi.org/10.1088/1674-4926/44/12/122001","url":null,"abstract":"Palladium (Pd)-based sulfides have triggered extensive interest due to their unique properties and potential applications in the fields of electronics and optoelectronics. However, the synthesis of large-scale uniform PdS and PdS2 nanofilms (NFs) remains an enormous challenge. In this work, 2-inch wafer-scale PdS and PdS2 NFs with excellent stability can be controllably prepared via chemical vapor deposition combined with electron beam evaporation technique. The thickness of the pre-deposited Pd film and the sulfurization temperature are critical for the precise synthesis of PdS and PdS2 NFs. A corresponding growth mechanism has been proposed based on our experimental results and Gibbs free energy calculations. The electrical transport properties of PdS and PdS2 NFs were explored by conductive atomic force microscopy. Our findings have achieved the controllable growth of PdS and PdS2 NFs, which may provide a pathway to facilitate PdS and PdS2 based applications for next-generation high performance optoelectronic devices.","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":"7 1","pages":""},"PeriodicalIF":5.1,"publicationDate":"2023-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139761873","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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