Journal of Semiconductors最新文献_第5页

Incomplete charge transfer in CMOS image sensor caused by Si/SiO2 interface states in the TG channel TG 沟道中的 Si/SiO2 界面态导致 CMOS 图像传感器中电荷转移不完全

IF 5.1 4区物理与天体物理

Journal of Semiconductors Pub Date : 2023-11-01 DOI: 10.1088/1674-4926/44/11/114104

Xi Lu, Changju Liu, Pinyuan Zhao, Yu Zhang, Bei Li, Zhenzhen Zhang, Jiangtao Xu

{"title":"Incomplete charge transfer in CMOS image sensor caused by Si/SiO2 interface states in the TG channel","authors":"Xi Lu, Changju Liu, Pinyuan Zhao, Yu Zhang, Bei Li, Zhenzhen Zhang, Jiangtao Xu","doi":"10.1088/1674-4926/44/11/114104","DOIUrl":"https://doi.org/10.1088/1674-4926/44/11/114104","url":null,"abstract":"CMOS image sensors produced by the existing CMOS manufacturing process usually have difficulty achieving complete charge transfer owing to the introduction of potential barriers or Si/SiO2 interface state traps in the charge transfer path, which reduces the charge transfer efficiency and image quality. Until now, scholars have only considered mechanisms that limit charge transfer from the perspectives of potential barriers and spill back effect under high illumination condition. However, the existing models have thus far ignored the charge transfer limitation due to Si/SiO2 interface state traps in the transfer gate channel, particularly under low illumination. Therefore, this paper proposes, for the first time, an analytical model for quantifying the incomplete charge transfer caused by Si/SiO2 interface state traps in the transfer gate channel under low illumination. This model can predict the variation rules of the number of untransferred charges and charge transfer efficiency when the trap energy level follows Gaussian distribution, exponential distribution and measured distribution. The model was verified with technology computer-aided design simulations, and the results showed that the simulation results exhibit the consistency with the proposed model.","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":"20 1","pages":""},"PeriodicalIF":5.1,"publicationDate":"2023-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138679967","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Multilayered PdTe2/thin Si heterostructures as self-powered flexible photodetectors with heart rate monitoring ability 多层碲化镉/薄硅异质结构作为具有心率监测能力的自供电柔性光电探测器

IF 5.1 4区物理与天体物理

Journal of Semiconductors Pub Date : 2023-11-01 DOI: 10.1088/1674-4926/44/11/112001

Chengyun Dong, Xiang An, Zhicheng Wu, Zhiguo Zhu, Chao Xie, Jian-An Huang, Linbao Luo

{"title":"Multilayered PdTe2/thin Si heterostructures as self-powered flexible photodetectors with heart rate monitoring ability","authors":"Chengyun Dong, Xiang An, Zhicheng Wu, Zhiguo Zhu, Chao Xie, Jian-An Huang, Linbao Luo","doi":"10.1088/1674-4926/44/11/112001","DOIUrl":"https://doi.org/10.1088/1674-4926/44/11/112001","url":null,"abstract":"Two-dimensional layered material/semiconductor heterostructures have emerged as a category of fascinating architectures for developing highly efficient and low-cost photodetection devices. Herein, we present the construction of a highly efficient flexible light detector operating in the visible-near infrared wavelength regime by integrating a PdTe2 multilayer on a thin Si film. A representative device achieves a good photoresponse performance at zero bias including a sizeable current on/off ratio exceeding 105, a decent responsivity of ~343 mA/W, a respectable specific detectivity of ~2.56 × 1012 Jones, and a rapid response time of 4.5/379 <italic toggle=\"yes\">μ</italic>s, under 730 nm light irradiation. The detector also displays an outstanding long-term air stability and operational durability. In addition, thanks to the excellent flexibility, the device can retain its prominent photodetection performance at various bending radii of curvature and upon hundreds of bending tests. Furthermore, the large responsivity and rapid response speed endow the photodetector with the ability to accurately probe heart rate, suggesting a possible application in the area of flexible and wearable health monitoring.","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":"3 1","pages":""},"PeriodicalIF":5.1,"publicationDate":"2023-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138679676","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Modulation bandwidth enhancement in monolithic integrated two-section DFB lasers based on the detuned loading effect 基于失谐加载效应的单片集成双截面 DFB 激光器调制带宽增强技术

IF 5.1 4区物理与天体物理

Journal of Semiconductors Pub Date : 2023-11-01 DOI: 10.1088/1674-4926/44/11/112301

Yunshan Zhang, Yifan Xu, Shijian Guan, Jilin Zheng, Hongming Gu, Lianyan Li, Rulei Xiao, Tao Fang, Hui Zou, Xiangfei Chen

引用次数: 0

High-performance enhancement-mode GaN-based p-FETs fabricated with O₃-Al₂O₃/HfO₂-stacked gate dielectric 用O3-Al2O3/ hfo2堆叠栅电介质制备高性能增强模式氮化镓基p- fet

4区物理与天体物理

Journal of Semiconductors Pub Date : 2023-10-01 DOI: 10.1088/1674-4926/44/10/102801

Hao Jin, Sen Huang, Qimeng Jiang, Yingjie Wang, Jie Fan, Haibo Yin, Xinhua Wang, Ke Wei, Jianxun Liu, Yaozong Zhong, Qian Sun, Xinyu Liu

引用次数: 0

Exploration of high-speed 3.0 THz imaging with a 65 nm CMOS process 利用65纳米CMOS工艺探索3.0太赫兹高速成像

4区物理与天体物理

Journal of Semiconductors Pub Date : 2023-10-01 DOI: 10.1088/1674-4926/44/10/102401

Min Liu, Ziteng Cai, Jian Liu, Nanjian Wu, Liyuan Liu

引用次数: 0

The measurement of responsivity of infrared photodetectors using a cavity blackbody 用空腔黑体测量红外探测器的响应性

4区物理与天体物理

Journal of Semiconductors Pub Date : 2023-10-01 DOI: 10.1088/1674-4926/44/10/102301

Nong Li, Dongwei Jiang, Guowei Wang, Weiqiang Chen, Wenguang Zhou, Junkai Jiang, Faran Chang, Hongyue Hao, Donghai Wu, Yingqiang Xu, Guiying Shen, Hui Xie, Jingming Liu, Youwen Zhao, Fenghua Wang, Zhichuan Niu

引用次数: 0

Forward stagewise regression with multilevel memristor for sparse coding 稀疏编码的多电平忆阻器前向逐级回归

4区物理与天体物理

Journal of Semiconductors Pub Date : 2023-10-01 DOI: 10.1088/1674-4926/44/10/104101

Chenxu Wu, Yibai Xue, Han Bao, Ling Yang, Jiancong Li, Jing Tian, Shengguang Ren, Yi Li, Xiangshui Miao

{"title":"Forward stagewise regression with multilevel memristor for sparse coding","authors":"Chenxu Wu, Yibai Xue, Han Bao, Ling Yang, Jiancong Li, Jing Tian, Shengguang Ren, Yi Li, Xiangshui Miao","doi":"10.1088/1674-4926/44/10/104101","DOIUrl":"https://doi.org/10.1088/1674-4926/44/10/104101","url":null,"abstract":"Abstract Sparse coding is a prevalent method for image inpainting and feature extraction, which can repair corrupted images or improve data processing efficiency, and has numerous applications in computer vision and signal processing. Recently, several memristor-based in-memory computing systems have been proposed to enhance the efficiency of sparse coding remarkably. However, the variations and low precision of the devices will deteriorate the dictionary, causing inevitable degradation in the accuracy and reliability of the application. In this work, a digital-analog hybrid memristive sparse coding system is proposed utilizing a multilevel Pt/Al 2 O 3 /AlO x /W memristor, which employs the forward stagewise regression algorithm: The approximate cosine distance calculation is conducted in the analog part to speed up the computation, followed by high-precision coefficient updates performed in the digital portion. We determine that four states of the aforementioned memristor are sufficient for the processing of natural images. Furthermore, through dynamic adjustment of the mapping ratio, the precision requirement for the digit-to-analog converters can be reduced to 4 bits. Compared to the previous system, our system achieves higher image reconstruction quality of the 38 dB peak-signal-to-noise ratio. Moreover, in the context of image inpainting, images containing 50% missing pixels can be restored with a reconstruction error of 0.0424 root-mean-squared error.","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":"149 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135850199","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Perovskite solar cells with NiO_x hole-transport layer 具有NiOx空穴传输层的钙钛矿太阳能电池

4区物理与天体物理

Journal of Semiconductors Pub Date : 2023-10-01 DOI: 10.1088/1674-4926/44/10/100201

Mengjia Li, Zuolin Zhang, Jie Sun, Fan Liu, Jiangzhao Chen, Liming Ding, Cong Chen

引用次数: 0

A wearable sweat patch for non-invasive and wireless monitoring inflammatory status 一种用于非侵入性和无线监测炎症状态的可穿戴汗贴

4区物理与天体物理

Journal of Semiconductors Pub Date : 2023-10-01 DOI: 10.1088/1674-4926/44/10/100401

Qilin Hua, Guozhen Shen

引用次数: 0

THz plasmonics and electronics in germanene nanostrips 锗纳米带的太赫兹等离子体和电子学

4区物理与天体物理

Journal of Semiconductors Pub Date : 2023-10-01 DOI: 10.1088/1674-4926/44/10/102001

Talia Tene, Marco Guevara, Gabriela Tubon-Usca, Oswaldo Villacrés Cáceres, Gabriel Moreano, Cristian Vacacela Gomez, Stefano Bellucci

{"title":"THz plasmonics and electronics in germanene nanostrips","authors":"Talia Tene, Marco Guevara, Gabriela Tubon-Usca, Oswaldo Villacrés Cáceres, Gabriel Moreano, Cristian Vacacela Gomez, Stefano Bellucci","doi":"10.1088/1674-4926/44/10/102001","DOIUrl":"https://doi.org/10.1088/1674-4926/44/10/102001","url":null,"abstract":"Abstract Germanene nanostrips (GeNSs) have garnered significant attention in modern semiconductor technology due to their exceptional physical characteristics, positioning them as promising candidates for a wide range of applications. GeNSs exhibit a two-dimensional (buckled) honeycomb-like lattice, which is similar to germanene but with controllable bandgaps. The modeling of GeNSs is essential for developing appropriate synthesis methods as it enables understanding and controlling the growth process of these systems. Indeed, one can adjust the strip width, which in turn can tune the bandgap and plasmonic response of the material to meet specific device requirements. In this study, the objective is to investigate the electronic behavior and THz plasmon features of GeNSs (≥100 nm wide). A semi-analytical model based on the charge-carrier velocity of freestanding germanene is utilized for this purpose. The charge-carrier velocity of freestanding germanene is determined through the GW approximation ( <?CDATA ${v}_{mathrm{F}}=0.702 times {10}^{6} $?> m·s −1 ). Within the width range of 100 to 500 nm, GeNSs exhibit narrow bandgaps, typically measuring only a few meV. Specifically, upon analysis, it was found that the bandgaps of the investigated GeNSs ranged between 29 and 6 meV. As well, these nanostrips exhibit <?CDATA $ sqrt{q} $?> -like plasmon dispersions, with their connected plasmonic frequency (≤30 THz) capable of being manipulated by varying parameters such as strip width, excitation plasmon angle, and sample quality. These manipulations can lead to frequency variations, either increasing or decreasing, as well as shifts towards larger momentum values. The outcomes of our study serve as a foundational motivation for future experiments, and further confirmation is needed to validate the reported results.","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":"64 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135921935","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1