Journal of Semiconductors最新文献

{"title":"From kesterite 2D nanosheets to wurtzite 1D nanorods: controllable synthesis of Cu−Zn−Sn−S and their application in electrocatalytic hydrogen evolution","authors":"Yu Li, Shuaibing Wang, Jie Chen, Ouyang Lin, Zhe Yin, Chunhe Yang, Aiwei Tang","doi":"10.1088/1674-4926/44/12/122701","DOIUrl":"https://doi.org/10.1088/1674-4926/44/12/122701","url":null,"abstract":"As typical quarternary copper-based chalcogenides, Cu–Zn–Sn–S nanocrystals (CZTS NCs) have emerged as a new-fashioned electrocatalyst in hydrogen evolution reactions (HERs). Oleylamine (OM), a reducing surfactant and solvent, plays a significant role in the assisting synthesis of CZTS NCs due to the ligand effect. Herein, we adopted a facile one-pot colloidal method for achieving the structure evolution of CZTS NCs from 2D nanosheets to 1D nanorods assisted through the continuous addition of OM. During the process, the mechanism of OM-induced morphology evolution was further discussed. When merely adding pure 1-dodecanethiol (DDT) as the solvent, the CZTS nanosheets were obtained. As OM was gradually added to the reaction, the CZTS NCs began to grow along the sides of the nanosheets and gradually shrink at the top, followed by the formation of stable nanorods. In acidic electrolytic conditions, the CZTS NCs with 1.0 OM addition display the optimal HER activity with a low overpotential of 561 mV at 10 mA/cm² and a small Tafel slope of 157.6 mV/dec compared with other CZTS samples. The enhancement of HER activity could be attributed to the contribution of the synergistic effect of the diverse crystal facets to the reaction.","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":"53 1","pages":""},"PeriodicalIF":5.1,"publicationDate":"2023-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139761868","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Interface engineering yields efficient perovskite light-emitting diodes","authors":"Rashid Khan, Guangyi Shi, Wenjing Chen, Zhengguo Xiao, Liming Ding","doi":"10.1088/1674-4926/44/12/120501","DOIUrl":"https://doi.org/10.1088/1674-4926/44/12/120501","url":null,"abstract":"Interface engineering yields efficient perovskite light-emitting","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":"1401 ","pages":""},"PeriodicalIF":5.1,"publicationDate":"2023-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139019280","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"<ArticleTitle xmlns:ns0=\"http://www.w3.org/1998/Math/MathML\">OASIS: An interpretable, finite-sample valid alternative to Pearson's <ns0:math><ns0:msup><ns0:mrow><ns0:mi>X</ns0:mi></ns0:mrow><ns0:mrow><ns0:mn>2</ns0:mn></ns0:mrow></ns0:msup></ns0:math> for scientific discovery.","authors":"Tavor Z Baharav, David Tse, Julia Salzman","doi":"10.1101/2023.03.16.533008","DOIUrl":"10.1101/2023.03.16.533008","url":null,"abstract":"<p><p>Contingency tables, data represented as counts matrices, are ubiquitous across quantitative research and data-science applications. Existing statistical tests are insufficient however, as none are simultaneously computationally efficient and statistically valid for a finite number of observations. In this work, motivated by a recent application in reference-free genomic inference (1), we develop OASIS (Optimized Adaptive Statistic for Inferring Structure), a family of statistical tests for contingency tables. OASIS constructs a test-statistic which is linear in the normalized data matrix, providing closed form p-value bounds through classical concentration inequalities. In the process, OASIS provides a decomposition of the table, lending interpretability to its rejection of the null. We derive the asymptotic distribution of the OASIS test statistic, showing that these finite-sample bounds correctly characterize the test statistic's p-value up to a variance term. Experiments on genomic sequencing data highlight the power and interpretability of OASIS. The same method based on OASIS significance calls detects SARS-CoV-2 and Mycobacterium Tuberculosis strains de novo, which cannot be achieved with current approaches. We demonstrate in simulations that OASIS is robust to overdispersion, a common feature in genomic data like single cell RNA-sequencing, where under accepted noise models OASIS still provides good control of the false discovery rate, while Pearson's <math><msup><mrow><mi>X</mi></mrow><mrow><mn>2</mn></mrow></msup></math> test consistently rejects the null. Additionally, we show on synthetic data that OASIS is more powerful than Pearson's <math><msup><mrow><mi>X</mi></mrow><mrow><mn>2</mn></mrow></msup></math> test in certain regimes, including for some important two group alternatives, which we corroborate with approximate power calculations.</p>","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":"37 1","pages":""},"PeriodicalIF":5.1,"publicationDate":"2023-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10634974/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82539827","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Development of a simple two-step lithography fabrication process for resonant tunneling diode using air-bridge technology","authors":"Swagata Samanta, Jue Wang, Edward Wasige","doi":"10.1088/1674-4926/44/11/114101","DOIUrl":"https://doi.org/10.1088/1674-4926/44/11/114101","url":null,"abstract":"This article reports on the development of a simple two-step lithography process for double barrier quantum well (DBQW) InGaAs/AlAs resonant tunneling diode (RTD) on a semi-insulating indium phosphide (InP) substrate using an air-bridge technology. This approach minimizes processing steps, and therefore the processing time as well as the required resources. It is particularly suited for material qualification of new epitaxial layer designs. A DC performance comparison between the proposed process and the conventional process shows approximately the same results. We expect that this novel technique will aid in the recent and continuing rapid advances in RTD technology.","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":"37 1","pages":""},"PeriodicalIF":5.1,"publicationDate":"2023-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138679796","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Photocatalytic removal of heavy metal ions and antibiotics in agricultural wastewater: A review","authors":"Jiaxin Song, Malik Ashtar, Ying Yang, Yuan Liu, Mingming Chen, Dawei Cao","doi":"10.1088/1674-4926/44/11/111701","DOIUrl":"https://doi.org/10.1088/1674-4926/44/11/111701","url":null,"abstract":"In recent years, the treatment of agricultural wastewater has been an important aspect of environmental protection. The purpose of photocatalytic technology is to degrade pollutants by utilizing solar light energy to stimulate the migration of photocarriers to the surface of photocatalysts and occur reduction-oxidation reaction with pollutants in agricultural wastewater. Photocatalytic technology has the characteristics of high efficiency, sustainability, low-energy and free secondary pollution. It is an environmental and economical method to recover water quality that only needs sunlight. In this paper, the mechanism and research progress of photocatalytic removal of heavy metal ions and antibiotics from agricultural water pollution were reviewed by combining photocatalytic degradation process with agricultural treatment technology. The mechanism of influencing factors of photocatalytic degradation efficiency was discussed in detail and corresponding strategies were proposed, which has certain reference value for the development of photocatalytic degradation.","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":"1 1","pages":""},"PeriodicalIF":5.1,"publicationDate":"2023-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138679809","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Study of the influence of virtual guard ring width on the performance of SPAD detectors in 180 nm standard CMOS technology","authors":"Danlu Liu, Ming Li, Tang Xu, Jie Dong, Yuming Fang, Yue Xu","doi":"10.1088/1674-4926/44/11/114102","DOIUrl":"https://doi.org/10.1088/1674-4926/44/11/114102","url":null,"abstract":"The influence of the virtual guard ring width (GRW) on the performance of the p-well/deep n-well single-photon avalanche diode (SPAD) in a 180 nm standard CMOS process was investigated. TCAD simulation demonstrates that the electric field strength and current density in the guard ring are obviously enhanced when GRW is decreased to 1 μm. It is experimentally found that, compared with an SPAD with GRW = 2 μm, the dark count rate (DCR) and afterpulsing probability (AP) of the SPAD with GRW = 1 μm is significantly increased by 2.7 times and twofold, respectively, meanwhile, its photon detection probability (PDP) is saturated and hard to be promoted at over 2 V excess bias voltage. Although the fill factor (FF) can be enlarged by reducing GRW, the dark noise of devices is negatively affected due to the enhanced trap-assisted tunneling (TAT) effect in the 1 μm guard ring region. By comparison, the SPAD with GRW = 2 μm can achieve a better trade-off between the FF and noise performance. Our study provides a design guideline for guard rings to realize a low-noise SPAD for large-array applications.","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":"6 1","pages":""},"PeriodicalIF":5.1,"publicationDate":"2023-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138679968","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Study of enhancement-mode GaN pFET with H plasma treated gate recess","authors":"Xiaotian Gao, Guohao Yu, Jiaan Zhou, Zheming Wang, Yu Li, Jijun Zhang, Xiaoyan Liang, Zhongming Zeng, Baoshun Zhang","doi":"10.1088/1674-4926/44/11/112801","DOIUrl":"https://doi.org/10.1088/1674-4926/44/11/112801","url":null,"abstract":"This letter showcases the successful fabrication of an enhancement-mode (E-mode) buried p-channel GaN field-effect-transistor on a standard p-GaN/AlGaN/GaN-on-Si power HEMT substrate. The transistor exhibits a threshold voltage (<italic toggle=\"yes\">V</italic>\u0000_TH) of −3.8 V, a maximum ON-state current (<italic toggle=\"yes\">I</italic>\u0000_ON) of 1.12 mA/mm, and an impressive <italic toggle=\"yes\">I</italic>\u0000_ON/<italic toggle=\"yes\">I</italic>\u0000_OFF ratio of 10⁷. To achieve these remarkable results, an H plasma treatment was strategically applied to the gated p-GaN region, where a relatively thick GaN layer (i.e., 70 nm) was kept intact without aggressive gate recess. Through this treatment, the top portion of the GaN layer was converted to be hole-free, leaving only the bottom portion p-type and spatially separated from the etched GaN surface and gate-oxide/GaN interface. This approach allows for E-mode operation while retaining high-quality p-channel characteristics.","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":"33 1","pages":""},"PeriodicalIF":5.1,"publicationDate":"2023-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138679955","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Waveguide-integrated optical modulators with two-dimensional materials","authors":"Haitao Chen, Hongyuan Cao, Zejie Yu, Weike Zhao, Daoxin Dai","doi":"10.1088/1674-4926/44/11/111301","DOIUrl":"https://doi.org/10.1088/1674-4926/44/11/111301","url":null,"abstract":"Waveguide-integrated optical modulators are indispensable for on-chip optical interconnects and optical computing. To cope with the ever-increasing amount of data being generated and consumed, ultrafast waveguide-integrated optical modulators with low energy consumption are highly demanded. In recent years, two-dimensional (2D) materials have attracted a lot of attention and have provided tremendous opportunities for the development of high-performance waveguide-integrated optical modulators because of their extraordinary optoelectronic properties and versatile compatibility. This paper reviews the state-of-the-art waveguide-integrated optical modulators with 2D materials, providing researchers with the developing trends in the field and allowing them to identify existing challenges and promising potential solutions. First, the concept and fundamental mechanisms of optical modulation with 2D materials are summarized. Second, a review of waveguide-integrated optical modulators employing electro-optic, all-optic, and thermo-optic effects is provided. Finally, the challenges and perspectives of waveguide-integrated modulators with 2D materials are discussed.","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":"23 1","pages":""},"PeriodicalIF":5.1,"publicationDate":"2023-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138679857","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Metallic few-layered 1T-VS2 nanosheets for enhanced sodium storage","authors":"Liang Wu, Peng Wang, Xingwu Zhai, Hang Wang, Wenqi Zhan, Xinfeng Tang, Qianwen Li, Min Zhou","doi":"10.1088/1674-4926/44/11/112701","DOIUrl":"https://doi.org/10.1088/1674-4926/44/11/112701","url":null,"abstract":"Metallic few-layered 1T phase vanadium disulfide nanosheets have been employed for boosting sodium ion batteries. It can deliver a capacity of 241 mAh∙g⁻¹ at 100 mA∙g⁻¹ after 200 cycles. Such long-term stability is attributed to the facile ion diffusion and electron transport resulting from the well-designed two-dimensional (2D) electron-electron correlations among V atoms in the 1T phase and optimized in-planar electric transport. Our results highlight the phase engineering into electrode design for energy storage.","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":"31 1","pages":""},"PeriodicalIF":5.1,"publicationDate":"2023-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138680346","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Performance optimization of tri-gate junctionless FinFET using channel stack engineering for digital and analog/RF design","authors":"Devenderpal Singh, Shalini Chaudhary, Basudha Dewan, Menka Yadav","doi":"10.1088/1674-4926/44/11/114103","DOIUrl":"https://doi.org/10.1088/1674-4926/44/11/114103","url":null,"abstract":"This manuscript explores the behavior of a junctionless tri-gate FinFET at the nano-scale region using SiGe material for the channel. For the analysis, three different channel structures are used: (a) tri-layer stack channel (TLSC) (Si–SiGe–Si), (b) double layer stack channel (DLSC) (SiGe–Si), (c) single layer channel (SLC) (Si). The <italic toggle=\"yes\">I</italic>−<italic toggle=\"yes\">V</italic> characteristics, subthreshold swing (SS), drain-induced barrier lowering (DIBL), threshold voltage (<italic toggle=\"yes\">V</italic>\u0000_t), drain current (<italic toggle=\"yes\">I</italic>\u0000_ON), OFF current (<italic toggle=\"yes\">I</italic>\u0000_OFF), and ON-OFF current ratio (<italic toggle=\"yes\">I</italic>\u0000_ON/<italic toggle=\"yes\">I</italic>\u0000_OFF) are observed for the structures at a 20 nm gate length. It is seen that TLSC provides 21.3% and 14.3% more ON current than DLSC and SLC, respectively. The paper also explores the analog and RF factors such as input transconductance (<italic toggle=\"yes\">g</italic>\u0000_m), output transconductance (<italic toggle=\"yes\">g</italic>\u0000_ds), gain (<italic toggle=\"yes\">g</italic>\u0000_m/<italic toggle=\"yes\">g</italic>\u0000_ds), transconductance generation factor (TGF), cut-off frequency (<italic toggle=\"yes\">f</italic>\u0000_T), maximum oscillation frequency (<italic toggle=\"yes\">f</italic>\u0000_max), gain frequency product (GFP) and linearity performance parameters such as second and third-order harmonics (<italic toggle=\"yes\">g</italic>\u0000_m2, <italic toggle=\"yes\">g</italic>\u0000_m3), voltage intercept points (VIP₂, VIP₃) and 1-dB compression points for the three structures. The results show that the TLSC has a high analog performance due to more <italic toggle=\"yes\">g</italic>\u0000_m and provides 16.3%, 48.4% more gain than SLC and DLSC, respectively and it also provides better linearity. All the results are obtained using the VisualTCAD tool.","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":"59 1","pages":""},"PeriodicalIF":5.1,"publicationDate":"2023-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138679848","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}