对 ( ) β-Ga2O3 衬底进行高温退火,以减少金刚石锯切后的结构缺陷

IF 4.8 4区 物理与天体物理 Q2 PHYSICS, CONDENSED MATTER
Pavel Butenko, Michael Boiko, Mikhail Sharkov, Aleksei Almaev, Aleksnder Kitsay, Vladimir Krymov, Anton Zarichny, Vladimir Nikolaev
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引用次数: 0

摘要

研究人员将一块商用外延()β-Ga2O3 硅片用金刚石锯成 2.5 × 3 平方毫米的碎片。通过 X 射线衍射和选择性湿法蚀刻技术研究了切割样品中的缺陷结构和结晶度。根据计算出的蚀刻坑(包括近边缘区域)的平均值估算出缺陷密度,结果接近 109 cm-2。发现了晶格取向偏差角度为 1-3 弧分的块体,以及在[]方向上相对应变约为 (1.0-1.5) × 10-4 的非共沸物。晶体的完美性向样品的切割线方向明显降低。为了通过增加缺陷运动迁移率来减少结构缺陷的数量并提高样品的晶体完美度,采用了热退火工艺。在 1100 °C 下退火 3 小时后,观察到多边形化和马赛克结构的形成以及位错壁的出现。以非化学计量相和块状偏差为特征的馏分消失了。11 小时的退火提高了晶体的均匀性和完美性。蚀刻坑的平均密度显著下降至 8 × 106 cm-2。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
High-temperature annealing of ( ) β-Ga2O3 substrates for reducing structural defects after diamond sawing
A commercial epi-ready ( ) β-Ga2O3 wafer was investigated upon diamond sawing into pieces measuring 2.5 × 3 mm2. The defect structure and crystallinity in the cut samples has been studied by X-ray diffraction and a selective wet etching technique. The density of defects was estimated from the average value of etch pits calculated, including near-edge regions, and was obtained close to 109 cm−2. Blocks with lattice orientation deviated by angles of 1−3 arcmin, as well as non-stoichiometric fractions with a relative strain about (1.0−1.5) × 10−4 in the [ ] direction, were found. Crystal perfection was shown to decrease significantly towards the cutting lines of the samples. To reduce the number of structural defects and increase the crystal perfection of the samples via increasing defect motion mobility, the thermal annealing was employed. Polygonization and formation of a mosaic structure coupled with dislocation wall appearance upon 3 h of annealing at 1100 °C was observed. The fractions characterized by non-stoichiometry phases and the block deviation disappeared. The annealing for 11 h improved the homogeneity and perfection in the crystals. The average density of the etch pits dropped down significantly to 8 × 106 cm−2.
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来源期刊
Journal of Semiconductors
Journal of Semiconductors PHYSICS, CONDENSED MATTER-
CiteScore
6.70
自引率
9.80%
发文量
119
期刊介绍: Journal of Semiconductors publishes articles that emphasize semiconductor physics, materials, devices, circuits, and related technology.
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