研究超多周期超晶格的先进理论方法:理论与实验

IF 4.8 4区 物理与天体物理 Q2 PHYSICS, CONDENSED MATTER
Alexander Sergeevich Dashkov, Semyon Andreevich Khakhulin, Dmitrii Alekseevich Shapran, Gennadii Fedorovich Glinskii, Nikita Andreevich Kostromin, Alexander Leonidovich Vasiliev, Sergey Nikolayevich Yakunin, Oleg Sergeevich Komkov, Evgeniy Viktorovich Pirogov, Maxim Sergeevich Sobolev, Leonid Ivanovich Goray, Alexei Dmitrievich Bouravleuv
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引用次数: 0

摘要

我们开发了一种新的理论方法来研究超多周期超晶格。该方法结合了 8 波段 kp 方法的精确性、射击方法的灵活性和蒙特卡罗方法。该方法被用于研究分子束外延生长的超多周期 Al0.3Ga0.7As/GaAs 超晶格的最优质样品。明示光反射光谱法被用来验证所提出的理论方法。首次对超多期超晶格的能带图进行了精确的理论分析和实验验证。所提出的方法高度精确地确定了跃迁峰位置,并能计算能带图、跃迁能量、弛豫速率和增益估计。与通常会产生 25% 误差的常用方法相比,该方法的误差明显降低到了 5%,而且还能恢复超晶格参数。找回的样品固有参数与 XRD 数据和生长参数一致。所提出的方法还准确预测了量子阱厚度小于 5 纳米时第二能级的逸出,正如光反射实验中所观察到的那样。所开发的方法为在室温下工作的太赫兹发光器件的新设计提供了建议。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
An advanced theoretical approach to study super-multiperiod superlattices: theory vs experiments
A new theoretical method to study super-multiperiod superlattices has been developed. The method combines the precision of the 8-band kp-method with the flexibility of the shooting method and the Monte Carlo approach. This method was applied to examine the finest quality samples of super-multiperiod Al0.3Ga0.7As/GaAs superlattices grown by molecular beam epitaxy. The express photoreflectance spectroscopy method was utilized to validate the proposed theoretical method. For the first time, the accurate theoretical analysis of the energy band diagram of super-multiperiod superlattices with experimental verification has been conducted. The proposed approach highly accurately determines transition peak positions and enables the calculation of the energy band diagram, transition energies, relaxation rates, and gain estimation. It has achieved a remarkably low 5% error compared to the commonly used method, which typically results in a 25% error, and allowed to recover the superlattice parameters. The retrieved intrinsic parameters of the samples aligned with XRD data and growth parameters. The proposed method also accurately predicted the escape of the second energy level for quantum well thicknesses less than 5 nm, as was observed in photoreflectance experiments. The new designs of THz light-emitting devices operating at room temperature were suggested by the developed method.
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来源期刊
Journal of Semiconductors
Journal of Semiconductors PHYSICS, CONDENSED MATTER-
CiteScore
6.70
自引率
9.80%
发文量
119
期刊介绍: Journal of Semiconductors publishes articles that emphasize semiconductor physics, materials, devices, circuits, and related technology.
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