1 MeV 电子辐射对氮化铝/氮化镓高电子迁移率晶体管的影响

IF 4.8 4区 物理与天体物理 Q2 PHYSICS, CONDENSED MATTER
Shijie Pan, Shiwei Feng, Xuan Li, Zixuan Feng, Xiaozhuang Lu, Kun Bai, Yamin Zhang
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引用次数: 0

摘要

本研究研究了不同辐射剂量后 1 MeV 电子辐射对 D 模式氮化镓基高电子迁移率晶体管(HEMT)的影响。获得了器件电学特性的变化,并分析了相关的物理机制。结果表明,在 5 × 1014 cm-2 的辐射剂量下,即使栅极负压低于阈值电压,沟道电流也不能被完全截断,栅极漏电流显著增加。利用发射显微镜和扫描电子显微镜确定了损伤位置。此外,我们还在 5 × 1012 至 1 × 1014 cm-2 的范围内调整了辐射剂量,结果发现漏极-源极电流增大,阈值电压略有负移。计算表明,载流子密度和电子迁移率逐渐增加。这为器件辐射强化技术的发展提供了参考。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Effects of 1 MeV electron radiation on the AlGaN/GaN high electron mobility transistors
In this study, the effects of 1 MeV electron radiation on the D-mode GaN-based high electron mobility transistors (HEMTs) were investigated after different radiation doses. The changes in electrical properties of the device were obtained, and the related physical mechanisms were analyzed. It indicated that under the radiation dose of 5 × 1014 cm−2, the channel current cannot be completely pinched off even if the negative gate voltage was lower than the threshold voltage, and the gate leakage current increased significantly. The emission microscopy and scanning electron microscopy were used to determine the damage location. Besides, the radiation dose was adjusted ranging from 5 × 1012 to 1 × 1014 cm−2, and we noticed that the drain−source current increased and the threshold voltage presented slightly negative shift. By calculations, it suggested that the carrier density and electron mobility gradually increased. It provided a reference for the development of device radiation reinforcement technology.
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来源期刊
Journal of Semiconductors
Journal of Semiconductors PHYSICS, CONDENSED MATTER-
CiteScore
6.70
自引率
9.80%
发文量
119
期刊介绍: Journal of Semiconductors publishes articles that emphasize semiconductor physics, materials, devices, circuits, and related technology.
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