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Surface and Grain-boundary Effects in Copper interconnects Thin Films Modeling with an Atomistic Basis 基于原子基的铜互连薄膜模型中的表面和晶界效应
2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2018-09-01 DOI: 10.1109/SISPAD.2018.8551705
Daniel Valencia, Kuang-Chung Wang, Yuanchen Chu, Gerhard Klimeck, M. Povolotskyi
{"title":"Surface and Grain-boundary Effects in Copper interconnects Thin Films Modeling with an Atomistic Basis","authors":"Daniel Valencia, Kuang-Chung Wang, Yuanchen Chu, Gerhard Klimeck, M. Povolotskyi","doi":"10.1109/SISPAD.2018.8551705","DOIUrl":"https://doi.org/10.1109/SISPAD.2018.8551705","url":null,"abstract":"As interconnects become smaller, their conductivity increases along with the parasitic effects in MOSFET technologies [1] Therefore, investigating how to model the scattering effects on the nanoscale is important to determine how to engineer interconnects toreduce those parasitic effects. In this work, a fully atomistic method is studied to model the electronic transport properties of copper thin films. For this purpose, a tight binding basis previously benchmarked against first principles calculations [2] is used todescribe surface roughness and grain boundary effects on comparablepper thin films with a thickness comparable to the values suggested by ITRS roadmap [3]. In contrast with traditional models, the results show that the tight binding method can quantify those scattering effects at low temperature without fitting any experimental parameters [4], [5].","PeriodicalId":170070,"journal":{"name":"2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"1971 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130044059","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Investigation of the Electrode Materials in Conductive Bridging RAM from First-Principle 从第一性原理研究导电桥接存储器中电极材料
2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2018-09-01 DOI: 10.1109/SISPAD.2018.8551694
F. Ducry, K. Portner, S. Andermatt, M. Luisier
{"title":"Investigation of the Electrode Materials in Conductive Bridging RAM from First-Principle","authors":"F. Ducry, K. Portner, S. Andermatt, M. Luisier","doi":"10.1109/SISPAD.2018.8551694","DOIUrl":"https://doi.org/10.1109/SISPAD.2018.8551694","url":null,"abstract":"Conductive bridging random access memories (CBRAM) are emerging non-volatile data storage devices whose switching mechanisms are not fully understood. Here, we present a modelling framework based on ab-initio simulations to investigate CBRAM cells. It combines density-functional theory and the Non-equilibrium Greens Function formalism. Realistic metallic filaments connecting two electrodes are constructed and their ballistic transport characteristics studied. For a given filament the type of counter electrode material has little influence on the magnitude of the ON-state current, but affects its spatial distribution. The conductance mainly depends on the material of the active electrode and the shape of the thinnest part of the filament.","PeriodicalId":170070,"journal":{"name":"2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"184 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116201413","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Analysis of the Effect of Field Enhancement at Fin Corners on Program Characteristics of FinFET Split-Gate MONOS 鳍角场增强对分闸单频单管晶体管程序特性的影响分析
2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2018-09-01 DOI: 10.1109/SISPAD.2018.8551742
K. Sonoda, E. Tsukuda, S. Tsuda, Tomohiro Hayashi, Y. Akiyama, Y. Yamaguchi, T. Yamashita
{"title":"Analysis of the Effect of Field Enhancement at Fin Corners on Program Characteristics of FinFET Split-Gate MONOS","authors":"K. Sonoda, E. Tsukuda, S. Tsuda, Tomohiro Hayashi, Y. Akiyama, Y. Yamaguchi, T. Yamashita","doi":"10.1109/SISPAD.2018.8551742","DOIUrl":"https://doi.org/10.1109/SISPAD.2018.8551742","url":null,"abstract":"The effect of field enhancement at Fin corners on program characteristics of FinFET Split-gate metal oxide nitride oxide silicon (SG-MONOS) is analyzed. The program characteristics using source-side injection (SSI) are found to be insensitive to the variation of the curvature radius at Fin corners, which shows the robustness of FinFET SG-MONOS to Fin shape variation inthe fabrication process.","PeriodicalId":170070,"journal":{"name":"2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"103 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116546743","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Modelling on Aging Induced Time Dependent Variability of Z2FET for Memory Applications 记忆用Z2FET老化诱导时间相关变异性的建模
2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2018-09-01 DOI: 10.1109/SISPAD.2018.8551718
M. Duan, B. Cheng, C. Bailón, F. Adamu-Lema, P. Asenov, C. Millar, P. Pfaeffli, A. Asenov
{"title":"Modelling on Aging Induced Time Dependent Variability of Z2FET for Memory Applications","authors":"M. Duan, B. Cheng, C. Bailón, F. Adamu-Lema, P. Asenov, C. Millar, P. Pfaeffli, A. Asenov","doi":"10.1109/SISPAD.2018.8551718","DOIUrl":"https://doi.org/10.1109/SISPAD.2018.8551718","url":null,"abstract":"Z2FET is a promising integrated DRAM device to replace the traditional 1 transistor 1 capacitor DRAM [1–4]. Memory products always require minimum cell size, high density and large volume memory arrays in the limited chip real estate. However, the downscaling of Z2FET dimensions leads to severe variability issues. A novel simulation methodology has been already proposed [5] to investigate the initial Z2FET Statistical Variability (SV), but the aging induced Time Dependent Variability (TDV) has never been considered.","PeriodicalId":170070,"journal":{"name":"2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"105 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131161032","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Efficient Modeling of Electron Transport with Plane Waves 平面波电子输运的有效模拟
2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2018-09-01 DOI: 10.1109/SISPAD.2018.8551730
M. L. Van de Put, A. Laturia, M. Fischetti, W. Vandenberghe
{"title":"Efficient Modeling of Electron Transport with Plane Waves","authors":"M. L. Van de Put, A. Laturia, M. Fischetti, W. Vandenberghe","doi":"10.1109/SISPAD.2018.8551730","DOIUrl":"https://doi.org/10.1109/SISPAD.2018.8551730","url":null,"abstract":"We present a method to simulate ballistic quantum transport in one-dimensional nanostructures, such as extremely scaled transistors, with a channel of nanowires or nanoribbons. In contrast to most popular approaches, we develop our method employing an accurate plane-wave basis at the atomic scale while retaining the numerical efficiency of a localized (tight-binding) basis at larger scales. At the core of our method is a finite-element expansion, where the finite element basis is enriched by a set of Bloch waves at high-symmetry points in the Brillouin zone of the crystal. We demonstrate the accuracy and efficiency of our method with the self-consistent simulation of ballistic transport in graphene nanoribbon FETs.","PeriodicalId":170070,"journal":{"name":"2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127770914","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Advanced Algorithms for Ab-initio Device Simulations Ab-initio设备模拟的高级算法
2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2018-09-01 DOI: 10.1109/SISPAD.2018.8551711
M. Luisier, F. Ducry, M. Hossein, Bani-Hashemian, S. Brück, M. Calderara, O. Schenk
{"title":"Advanced Algorithms for Ab-initio Device Simulations","authors":"M. Luisier, F. Ducry, M. Hossein, Bani-Hashemian, S. Brück, M. Calderara, O. Schenk","doi":"10.1109/SISPAD.2018.8551711","DOIUrl":"https://doi.org/10.1109/SISPAD.2018.8551711","url":null,"abstract":"Numerical algorithms dedicated to large-scale quantum transport problems from first-principles are presented in this paper. They can be decomposed into three main categories: (i) the calculation of the open boundary conditions that connect the simulation domain and its environment, (ii) the solution of the resulting Schrödinger equation in the ballistic limit of transport, and (iii) the extension of this case to situations involving scattering, e.g. electron-phonon interactions. It will be shown that ab-initio device simulations require algorithms specifically developed for that purpose and that graphics processing units (GPUs) can bring significant speed ups as compared to solvers based on CPUs only. As an illustration, the computational times coming from the investigation of a realistic conductive bridging random access memory cell will be reported.","PeriodicalId":170070,"journal":{"name":"2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"29 44","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132707454","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Nonequilibrium Green’s function method: Büttiker probes for carrier generation and recombination 非平衡格林函数法:用于载流子生成和重组的<s:1> ttiker探针
2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2018-09-01 DOI: 10.1109/SISPAD.2018.8551714
Kuang-Chung Wang, Yuanchen Chu, Daniel Valencia, J. Geng, J. Charles, Prasad Sarangapani, T. Kubis
{"title":"Nonequilibrium Green’s function method: Büttiker probes for carrier generation and recombination","authors":"Kuang-Chung Wang, Yuanchen Chu, Daniel Valencia, J. Geng, J. Charles, Prasad Sarangapani, T. Kubis","doi":"10.1109/SISPAD.2018.8551714","DOIUrl":"https://doi.org/10.1109/SISPAD.2018.8551714","url":null,"abstract":"The non-equilibrium Green function (NEGF) method is capable of nanodevice performance predictions including coherent and incoherent effects. To treat incoherent scattering, carrier generation and recombination is computationally very expensive. In this work, the numerically efficient Buttiker-probe model is expanded to cover recombination and generation effects in addition to various incoherent scattering processes. The capability of the new method to predict nanodevices is exemplified with quantum well III-N light-emitting diodes and anti-ambipolar 2D material hetero junctions.","PeriodicalId":170070,"journal":{"name":"2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"235 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133153309","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Multiscale Modeling of Ferroelectric Memories: Insights into Performances and Reliability 铁电存储器的多尺度建模:对性能和可靠性的见解
2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2018-09-01 DOI: 10.1109/SISPAD.2018.8551722
Milan Pešiü, V. D. Lecce, D. Pramanik, L. Larcher
{"title":"Multiscale Modeling of Ferroelectric Memories: Insights into Performances and Reliability","authors":"Milan Pešiü, V. D. Lecce, D. Pramanik, L. Larcher","doi":"10.1109/SISPAD.2018.8551722","DOIUrl":"https://doi.org/10.1109/SISPAD.2018.8551722","url":null,"abstract":"Despite large efforts in research of HfO2-based ferroelectric (FE) random access memories (FRAM), mechanisms underlying the device behavior of and its reliability (premature degradation) are poorly understood. To tackle this issue, we used a multiscale modeling framework that allows investigating the interplay between the FE switching, defects and polycrystalline nature of the HfO2 material. This multiscale model allows connecting the electrical performances of FE devices (e.g. switching) to the atomic material properties, including defects and morphology (e.g. material phase). We used this simulation platform to both study wake-up process and the device-to-device variability in different memory architectures, i.e. capacitor-based FRAM and ferroelectric tunnel junction (FTJ) and the ferroelectric FET (FeFET) subjected to high field program/erase stress.","PeriodicalId":170070,"journal":{"name":"2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129664477","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
DTCO and TCAD for a 12 Layer-EUV Ultra-Scaled Surrounding Gate Transistor 6T-SRAM 12层euv超尺度环绕栅晶体管6T-SRAM的DTCO和TCAD
2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2018-09-01 DOI: 10.1109/SISPAD.2018.8551632
P. Matagne, H. Nakamura, M. Kim, Y. Kikuchi, T. Huynh-Bao, Z. Tao, W. Li, K. Devriendt, L. Ragnarsson, J. Boemmels, A. Mallik, E. Altamirano-Sachez, F. Sebaai, C. Lorant, N. Jourdan, C. Porret, D. Mocuta, N. Harada, F. Masuoka
{"title":"DTCO and TCAD for a 12 Layer-EUV Ultra-Scaled Surrounding Gate Transistor 6T-SRAM","authors":"P. Matagne, H. Nakamura, M. Kim, Y. Kikuchi, T. Huynh-Bao, Z. Tao, W. Li, K. Devriendt, L. Ragnarsson, J. Boemmels, A. Mallik, E. Altamirano-Sachez, F. Sebaai, C. Lorant, N. Jourdan, C. Porret, D. Mocuta, N. Harada, F. Masuoka","doi":"10.1109/SISPAD.2018.8551632","DOIUrl":"https://doi.org/10.1109/SISPAD.2018.8551632","url":null,"abstract":"A flow, module steps and key structural elements enabling a surrounding gate transistor (SGT) based 6T-SRAM with 50nm pillar pitch and 0.0205 um2 are presented, with emphasis on process challenges and innovations. A new DTCO/TCAD methodology is used to explore the design space, demonstrate the bit cell functionality and optimize the process. In particular, it is shown that vertical SGT are extremely sensitive to gate misalignment and that buried bottom contact makes the process immune to doping variations and misalignments.","PeriodicalId":170070,"journal":{"name":"2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132030137","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
New physical insight for analog application in PSP bulk compact model 新的物理见解模拟应用在PSP散装紧凑模型
2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2018-09-01 DOI: 10.1109/SISPAD.2018.8551712
S. Martinie, O. Rozeau, T. Poiroux, J. Barbe, F. Gilibert, X. Montagner, Salim El Ghouli, A. Juge, D. J. Geert Smit, A. Scholten
{"title":"New physical insight for analog application in PSP bulk compact model","authors":"S. Martinie, O. Rozeau, T. Poiroux, J. Barbe, F. Gilibert, X. Montagner, Salim El Ghouli, A. Juge, D. J. Geert Smit, A. Scholten","doi":"10.1109/SISPAD.2018.8551712","DOIUrl":"https://doi.org/10.1109/SISPAD.2018.8551712","url":null,"abstract":"With the maturity of CMOS technologies and their use for low voltage analog applications, some additional parasitic effects must be modeled to improve again the accuracy of SPICE models. Indeed, with the decrease of supply voltage, devices operate close to the weak inversion, where some effects such as parasitic sidewall transistor, also called hump effect [1], and the interface states effect [2], can have a significant impact on the model accuracy. This paper describes the latest significant improvements of PSP model related to version 103.6 including new compact models of parasitic MOSFET and interface states. The major challenge is to provide accurate solutions with a low impact on CPU times for large analog circuit designs. The model extensions are validated against Silicon experiments from devices with channel length down to 40nm, and including low voltage and body bias operation.","PeriodicalId":170070,"journal":{"name":"2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"106 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121947916","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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