Modelling on Aging Induced Time Dependent Variability of Z2FET for Memory Applications

Abstract

Z2FET is a promising integrated DRAM device to replace the traditional 1 transistor 1 capacitor DRAM [1–4]. Memory products always require minimum cell size, high density and large volume memory arrays in the limited chip real estate. However, the downscaling of Z2FET dimensions leads to severe variability issues. A novel simulation methodology has been already proposed [5] to investigate the initial Z2FET Statistical Variability (SV), but the aging induced Time Dependent Variability (TDV) has never been considered.