平面波电子输运的有效模拟

M. L. Van de Put, A. Laturia, M. Fischetti, W. Vandenberghe
{"title":"平面波电子输运的有效模拟","authors":"M. L. Van de Put, A. Laturia, M. Fischetti, W. Vandenberghe","doi":"10.1109/SISPAD.2018.8551730","DOIUrl":null,"url":null,"abstract":"We present a method to simulate ballistic quantum transport in one-dimensional nanostructures, such as extremely scaled transistors, with a channel of nanowires or nanoribbons. In contrast to most popular approaches, we develop our method employing an accurate plane-wave basis at the atomic scale while retaining the numerical efficiency of a localized (tight-binding) basis at larger scales. At the core of our method is a finite-element expansion, where the finite element basis is enriched by a set of Bloch waves at high-symmetry points in the Brillouin zone of the crystal. We demonstrate the accuracy and efficiency of our method with the self-consistent simulation of ballistic transport in graphene nanoribbon FETs.","PeriodicalId":170070,"journal":{"name":"2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Efficient Modeling of Electron Transport with Plane Waves\",\"authors\":\"M. L. Van de Put, A. Laturia, M. Fischetti, W. Vandenberghe\",\"doi\":\"10.1109/SISPAD.2018.8551730\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present a method to simulate ballistic quantum transport in one-dimensional nanostructures, such as extremely scaled transistors, with a channel of nanowires or nanoribbons. In contrast to most popular approaches, we develop our method employing an accurate plane-wave basis at the atomic scale while retaining the numerical efficiency of a localized (tight-binding) basis at larger scales. At the core of our method is a finite-element expansion, where the finite element basis is enriched by a set of Bloch waves at high-symmetry points in the Brillouin zone of the crystal. We demonstrate the accuracy and efficiency of our method with the self-consistent simulation of ballistic transport in graphene nanoribbon FETs.\",\"PeriodicalId\":170070,\"journal\":{\"name\":\"2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SISPAD.2018.8551730\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SISPAD.2018.8551730","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

摘要

我们提出了一种方法来模拟一维纳米结构中的弹道量子输运,例如用纳米线或纳米带通道的极尺度晶体管。与大多数流行的方法相比,我们开发的方法在原子尺度上使用精确的平面波基,同时在更大尺度上保留局部(紧密结合)基的数值效率。我们的方法的核心是一个有限元展开,其中在晶体布里渊区高对称点的一组布洛赫波丰富了有限元基。我们通过石墨烯纳米带场效应管的弹道输运自一致模拟证明了我们方法的准确性和效率。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Efficient Modeling of Electron Transport with Plane Waves
We present a method to simulate ballistic quantum transport in one-dimensional nanostructures, such as extremely scaled transistors, with a channel of nanowires or nanoribbons. In contrast to most popular approaches, we develop our method employing an accurate plane-wave basis at the atomic scale while retaining the numerical efficiency of a localized (tight-binding) basis at larger scales. At the core of our method is a finite-element expansion, where the finite element basis is enriched by a set of Bloch waves at high-symmetry points in the Brillouin zone of the crystal. We demonstrate the accuracy and efficiency of our method with the self-consistent simulation of ballistic transport in graphene nanoribbon FETs.
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