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2014 International Workshop on Computational Electronics (IWCE)最新文献

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Reduction of the normal-superfluid transition temperature in gated bilayer graphene 门控双层石墨烯中正超流转变温度的降低
2014 International Workshop on Computational Electronics (IWCE) Pub Date : 2014-06-03 DOI: 10.1109/IWCE.2014.6865817
M. Fischetti, S. Aboud
{"title":"Reduction of the normal-superfluid transition temperature in gated bilayer graphene","authors":"M. Fischetti, S. Aboud","doi":"10.1109/IWCE.2014.6865817","DOIUrl":"https://doi.org/10.1109/IWCE.2014.6865817","url":null,"abstract":"We show that the normal-superfluid transition in bilayer graphene (BLG) predicted to occur at high temperature is strongly affected not only by the dielectric constants of the insulators, but also by the proximity of ideal metal gates. Even assuming optimistically an unscreened interlayer Coulomb interaction, we find that for a gate-insulator thickness smaller than 2-to-5 nm of equivalent SiO2 thickness, the transition temperature is depressed to the 1 K-1 mK range. Thus, thicker and low-κ gate insulators are required to design transistors exploiting the properties of the superfluid state.","PeriodicalId":168149,"journal":{"name":"2014 International Workshop on Computational Electronics (IWCE)","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129991386","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A comprehensive hydrodynamical model for charge transport in graphene 石墨烯中电荷输运的综合流体动力学模型
2014 International Workshop on Computational Electronics (IWCE) Pub Date : 2014-06-03 DOI: 10.1109/IWCE.2014.6865866
G. Mascali, V. Romano
{"title":"A comprehensive hydrodynamical model for charge transport in graphene","authors":"G. Mascali, V. Romano","doi":"10.1109/IWCE.2014.6865866","DOIUrl":"https://doi.org/10.1109/IWCE.2014.6865866","url":null,"abstract":"In this paper we present a hydrodynamical model for the charge and the heat transport in graphene. The macroscopic variables are moments of the electron, hole and phonon distribution functions, and their evolution equations are derived from the Boltzmann equations by integration. The system of equations is closed by means of the maximum entropy principle and all the main scattering mechanisms are taken into account. Numerical simulations are presented in the case of a suspended graphene monolayer.","PeriodicalId":168149,"journal":{"name":"2014 International Workshop on Computational Electronics (IWCE)","volume":"17 8","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134411382","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
Study of electric field caused by semiconductor quantum dots in close proximity to DNA origami 接近DNA折纸的半导体量子点引起的电场研究
2014 International Workshop on Computational Electronics (IWCE) Pub Date : 2014-06-03 DOI: 10.1109/IWCE.2014.6865880
Ke Xu, X. Meshik, M. Choi, M. Dutta, M. Stroscio, Tsai-Chin Wu, Masudur Rahman, M. Norton
{"title":"Study of electric field caused by semiconductor quantum dots in close proximity to DNA origami","authors":"Ke Xu, X. Meshik, M. Choi, M. Dutta, M. Stroscio, Tsai-Chin Wu, Masudur Rahman, M. Norton","doi":"10.1109/IWCE.2014.6865880","DOIUrl":"https://doi.org/10.1109/IWCE.2014.6865880","url":null,"abstract":"Fluorescent semiconductor quantum dots (QDs) are frequently used in conjunction with biological molecules in a wide variety of applications. A negative 30-nm shift in QD emission has been observed upon binding CdSe QDs to DNA origami, a large scaffolded double-stranded DNA molecule. This paper effectively explains the observed emission shift by modeling the effect of the electric field generated by the DNA origami on the band structure of the QD. A relationship between photon energy shift and QD-origami distance is also presented.","PeriodicalId":168149,"journal":{"name":"2014 International Workshop on Computational Electronics (IWCE)","volume":"75 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133696442","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Device Simulation of P-InAlN-Gate AlGaN/GaN high electron mobility transistor p - inaln栅极AlGaN/GaN高电子迁移率晶体管器件仿真
2014 International Workshop on Computational Electronics (IWCE) Pub Date : 2014-06-03 DOI: 10.1109/IWCE.2014.6865876
N. Shrestha, Yueh-Chin Lin, Han-Tung Chang, Yiming Li, E. Chang
{"title":"Device Simulation of P-InAlN-Gate AlGaN/GaN high electron mobility transistor","authors":"N. Shrestha, Yueh-Chin Lin, Han-Tung Chang, Yiming Li, E. Chang","doi":"10.1109/IWCE.2014.6865876","DOIUrl":"https://doi.org/10.1109/IWCE.2014.6865876","url":null,"abstract":"Enhancement mode AlGaN/GaN high electron mobility transistor with p-InAlN gate is designed and successfully studied its electrical properties. Threshold voltage of the device is 1.9 V, which is required magnitude of threshold voltage for real device. Similarly, the maximum drain current is 520 mA/mm and trasconductance is 183 mS/mm, which is the record estimation for enhancement-mode (e-mode) device with recorded threshold voltage. P-InAlN layer injects hole to the barrier at higher gate voltage and results in comparatively larger drain current. Selective area etching and re-grow AlInN causes thin barrier layer beneath the gate. This recess like p-InAlN structure can reduce the concentration of 2DEG; and thus results the high magnitude of threshold voltage.","PeriodicalId":168149,"journal":{"name":"2014 International Workshop on Computational Electronics (IWCE)","volume":"205 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123055720","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Conduction gap of strained/unstrained graphene junctions: Direction dependence 应变/非应变石墨烯结的传导间隙:方向依赖性
2014 International Workshop on Computational Electronics (IWCE) Pub Date : 2014-06-03 DOI: 10.1109/IWCE.2014.6865868
M. Nguyen, V. H. Nguyen, P. Dollfus, H. Viet Nguyen
{"title":"Conduction gap of strained/unstrained graphene junctions: Direction dependence","authors":"M. Nguyen, V. H. Nguyen, P. Dollfus, H. Viet Nguyen","doi":"10.1109/IWCE.2014.6865868","DOIUrl":"https://doi.org/10.1109/IWCE.2014.6865868","url":null,"abstract":"Though the energy bandgap of strained graphene remains zero, the shift of Dirac points in the k-space due to strain-induced deformation of graphene lattice can lead to the appearance of a finite conduction gap of several hundreds meV in strained/unstrained junctions with a strain of only a few percent. This conduction gap strongly depends on the direction of applied strain and the transport direction. Here, we study its properties with respect to these quantities. This work provides useful information for further exploiting graphene strained junctions in electronic applications.","PeriodicalId":168149,"journal":{"name":"2014 International Workshop on Computational Electronics (IWCE)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115184284","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
3D Finite Element Schrödinger equation corrected Monte Carlo simulations of nanoscale FinFETs 三维有限元Schrödinger方程修正蒙特卡罗模拟纳米级finfet
2014 International Workshop on Computational Electronics (IWCE) Pub Date : 2014-06-03 DOI: 10.1109/IWCE.2014.6865822
D. Nagy, M. Elmessary, M. Aldegunde, J. Lindberg, W. Dettmer, D. Peric, A. Loureiro, K. Kalna
{"title":"3D Finite Element Schrödinger equation corrected Monte Carlo simulations of nanoscale FinFETs","authors":"D. Nagy, M. Elmessary, M. Aldegunde, J. Lindberg, W. Dettmer, D. Peric, A. Loureiro, K. Kalna","doi":"10.1109/IWCE.2014.6865822","DOIUrl":"https://doi.org/10.1109/IWCE.2014.6865822","url":null,"abstract":"A 3D Finite Element Monte Carlo simulation with 2D Schrödinger based quantum correction are employed to forecast the performance of SOI Si FinFET devices scaled to gate length of 10.7 nm. The performance of these devices are greatly affected by the exact device geometry and thus the accurate description of cross-sections is essential. We chose three cross-sections: rectangular (REC), wide- (WTRI) and narrow-triangular (NTRI), with rounded corners, in 〈100〉 and 〈110〉 channel orientations. We found that the REC FinFETs give a larger drive current per perimeter than the WTRI (8%) and NTRI (26%) ones but are outperformed by the NTRI devices when normalised by the channel area [WTRI (18%) and REC (20%)]. The sub-threshold slopes are about 71, 69 and 66 mV/dec for REC, WTRI and NTRI, respectively.","PeriodicalId":168149,"journal":{"name":"2014 International Workshop on Computational Electronics (IWCE)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131525996","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Time-domain Monte Carlo simulation of GaN planar Gunn nanodiodes in resonant circuits 谐振电路中GaN平面Gunn纳米二极管的时域蒙特卡罗模拟
2014 International Workshop on Computational Electronics (IWCE) Pub Date : 2014-06-03 DOI: 10.1109/IWCE.2014.6865816
B. G. Vasallo, J. Millithaler, I. Íñiguez-de-la-Torre, T. González, J. Mateos
{"title":"Time-domain Monte Carlo simulation of GaN planar Gunn nanodiodes in resonant circuits","authors":"B. G. Vasallo, J. Millithaler, I. Íñiguez-de-la-Torre, T. González, J. Mateos","doi":"10.1109/IWCE.2014.6865816","DOIUrl":"https://doi.org/10.1109/IWCE.2014.6865816","url":null,"abstract":"In this work we present a theoretical study based on time-domain Monte Carlo (MC) simulations of GaN-based Self-Switching Diodes (SSDs) oriented to the experimental achievement and control of the sub-THz Gunn-oscillations potentially provided by these devices. With this aim, an analysis of the frequency performance of SSDs connected to a resonant RLC parallel circuit, is reported here. V-shaped SSDs have been found to be more efficient, in terms of the DC to AC conversion efficiency η, than similar square-shape ones. Indeed, a value of η of at least 0.80%, can be achieved with appropriate RLC elements, even when considering heating effects. When the influence of parasitic elements such as the crosstalk capacitance Ctalk is evaluated, MC simulations have shown that the resonant circuit must contain a capacitance C higher than Ctalk in order to obtain experimentally useful values of η. This condition can be reached by integrating a sufficiently high number N of parallel SSDs in the fabricated devices. MC simulations have also shown that when several diodes are fabricated in parallel the oscillations of all the SSDs are not synchronized, but this problem is solved by the attachment of a resonant RLC tank.","PeriodicalId":168149,"journal":{"name":"2014 International Workshop on Computational Electronics (IWCE)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128340618","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Microscopic modeling of quantum devices at high carrier densities via Lindblad-type scattering superoperators 高载流子密度下量子器件的lindblade型散射超算子微观建模
2014 International Workshop on Computational Electronics (IWCE) Pub Date : 2014-06-03 DOI: 10.1109/IWCE.2014.6865848
R. Rosati, R. Iotti, F. Rossi
{"title":"Microscopic modeling of quantum devices at high carrier densities via Lindblad-type scattering superoperators","authors":"R. Rosati, R. Iotti, F. Rossi","doi":"10.1109/IWCE.2014.6865848","DOIUrl":"https://doi.org/10.1109/IWCE.2014.6865848","url":null,"abstract":"We derive a local equation of motion for the electronic single-particle density matrix in the presence of one- as well as two-body scattering processes. This is done by applying the mean-field approximation to the many-electron dynamics obtained via a recently proposed Markov limit, able to furnish many-body Lindblad-type scattering superoperators. The resulting time evolution at finite/high carrier densities turns out to be non-linear (and therefore non-Lindblad), and to recover a Lindblad form in the low-density limit.","PeriodicalId":168149,"journal":{"name":"2014 International Workshop on Computational Electronics (IWCE)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126885207","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Phonon-induced spin relaxation of conduction electrons in silicon crystals 硅晶体中传导电子的声子诱导自旋弛豫
2014 International Workshop on Computational Electronics (IWCE) Pub Date : 2014-06-03 DOI: 10.1109/IWCE.2014.6865863
D. P. Adorno, N. Pizzolato, C. Graceffa
{"title":"Phonon-induced spin relaxation of conduction electrons in silicon crystals","authors":"D. P. Adorno, N. Pizzolato, C. Graceffa","doi":"10.1109/IWCE.2014.6865863","DOIUrl":"https://doi.org/10.1109/IWCE.2014.6865863","url":null,"abstract":"Experimental works managing electrical injection of spin polarization in n-type and p-type silicon have been recently carried out up to room-temperature. In spite of these promising experimental results, a comprehensive theoretical framework concerning the influence of transport conditions on phonon-induced electron spin depolarization in silicon structures, in a wide range of values of lattice temperature, doping concentration and amplitude of external fields, is still at a developing stage. In order to investigate the spin transport of conduction electrons in lightly doped n-type Si crystals, a set of semiclassical multiparticle Monte Carlo simulations has been carried out. The mean spin depolarization time and length of drifting electrons, heated by an electric field, have been calculated. A good agreement is found between our numerical findings and those computed by using different theoretical approaches and recent experimental results obtained in spin transport devices. Our Monte Carlo outcomes, in ranges of temperature and field amplitude yet unexplored, can be used as a guide for future experimental studies oriented towards a more effective optimization of room-temperature silicon-based spintronic devices.","PeriodicalId":168149,"journal":{"name":"2014 International Workshop on Computational Electronics (IWCE)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114344681","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Remote soft-optical phonon scattering in Si nanowire FETs 硅纳米线场效应管中的远端软光学声子散射
2014 International Workshop on Computational Electronics (IWCE) Pub Date : 2014-06-03 DOI: 10.1109/IWCE.2014.6865851
J. Barker, A. Martinez
{"title":"Remote soft-optical phonon scattering in Si nanowire FETs","authors":"J. Barker, A. Martinez","doi":"10.1109/IWCE.2014.6865851","DOIUrl":"https://doi.org/10.1109/IWCE.2014.6865851","url":null,"abstract":"In this work we calculate the impact of remote SO phonon scattering on the transfer characteristics of gate-all-around Si nanowire transistors. The polar SO phonons are confined to the HfO2/Si interface. Nanowire transistors with two different cross-sections are considered. The results show that the impact on the drain current is of the same order and of the same importance as other commonly used bulk-type phonons.","PeriodicalId":168149,"journal":{"name":"2014 International Workshop on Computational Electronics (IWCE)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122139241","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
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