Remote soft-optical phonon scattering in Si nanowire FETs

Abstract

In this work we calculate the impact of remote SO phonon scattering on the transfer characteristics of gate-all-around Si nanowire transistors. The polar SO phonons are confined to the HfO2/Si interface. Nanowire transistors with two different cross-sections are considered. The results show that the impact on the drain current is of the same order and of the same importance as other commonly used bulk-type phonons.