{"title":"硅纳米线场效应管中的远端软光学声子散射","authors":"J. Barker, A. Martinez","doi":"10.1109/IWCE.2014.6865851","DOIUrl":null,"url":null,"abstract":"In this work we calculate the impact of remote SO phonon scattering on the transfer characteristics of gate-all-around Si nanowire transistors. The polar SO phonons are confined to the HfO2/Si interface. Nanowire transistors with two different cross-sections are considered. The results show that the impact on the drain current is of the same order and of the same importance as other commonly used bulk-type phonons.","PeriodicalId":168149,"journal":{"name":"2014 International Workshop on Computational Electronics (IWCE)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Remote soft-optical phonon scattering in Si nanowire FETs\",\"authors\":\"J. Barker, A. Martinez\",\"doi\":\"10.1109/IWCE.2014.6865851\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work we calculate the impact of remote SO phonon scattering on the transfer characteristics of gate-all-around Si nanowire transistors. The polar SO phonons are confined to the HfO2/Si interface. Nanowire transistors with two different cross-sections are considered. The results show that the impact on the drain current is of the same order and of the same importance as other commonly used bulk-type phonons.\",\"PeriodicalId\":168149,\"journal\":{\"name\":\"2014 International Workshop on Computational Electronics (IWCE)\",\"volume\":\"25 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-06-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 International Workshop on Computational Electronics (IWCE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IWCE.2014.6865851\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 International Workshop on Computational Electronics (IWCE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWCE.2014.6865851","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Remote soft-optical phonon scattering in Si nanowire FETs
In this work we calculate the impact of remote SO phonon scattering on the transfer characteristics of gate-all-around Si nanowire transistors. The polar SO phonons are confined to the HfO2/Si interface. Nanowire transistors with two different cross-sections are considered. The results show that the impact on the drain current is of the same order and of the same importance as other commonly used bulk-type phonons.