3D Finite Element Schrödinger equation corrected Monte Carlo simulations of nanoscale FinFETs

Abstract

A 3D Finite Element Monte Carlo simulation with 2D Schrödinger based quantum correction are employed to forecast the performance of SOI Si FinFET devices scaled to gate length of 10.7 nm. The performance of these devices are greatly affected by the exact device geometry and thus the accurate description of cross-sections is essential. We chose three cross-sections: rectangular (REC), wide- (WTRI) and narrow-triangular (NTRI), with rounded corners, in 〈100〉 and 〈110〉 channel orientations. We found that the REC FinFETs give a larger drive current per perimeter than the WTRI (8%) and NTRI (26%) ones but are outperformed by the NTRI devices when normalised by the channel area [WTRI (18%) and REC (20%)]. The sub-threshold slopes are about 71, 69 and 66 mV/dec for REC, WTRI and NTRI, respectively.