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2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)最新文献

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Investigation on degradation mechanism and optimization for SiC power MOSFETs under long-term short-circuit stress 长期短路应力下SiC功率mosfet的退化机理及优化研究
2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Pub Date : 2018-05-13 DOI: 10.1109/ISPSD.2018.8393687
Jiaxing Wei, Siyang Liu, Jiong Fang, Sheng Li, Ting Li, Weifeng Sun
{"title":"Investigation on degradation mechanism and optimization for SiC power MOSFETs under long-term short-circuit stress","authors":"Jiaxing Wei, Siyang Liu, Jiong Fang, Sheng Li, Ting Li, Weifeng Sun","doi":"10.1109/ISPSD.2018.8393687","DOIUrl":"https://doi.org/10.1109/ISPSD.2018.8393687","url":null,"abstract":"In this paper, the degradation mechanism of silicon carbide (SiC) power metal-oxide-semiconductor field-effect transistors (MOSFETs) under long-term short-circuit (SC) stress is investigated. With the help of Silvaco TCAD simulations and measurements on degraded parameters, the injection of electrons into gate oxide above channel region of the device is demonstrated to be the dominant degradation mechanism. It results in the positive shift of threshold voltage (Vth) and the increase of on-state resistance (Rdson) under low gate voltage bias condition. Simulated electrical properties of the device with electrons trapped into gate oxide above channel region share similar degradation trend with measured ones, proving the correctness of our analysis. Furthermore, an improved device structure with an additional shallow inverted-doping p-well, which can effectively lower the impact ionization rate (I.I.) along the SiC/SiO2 interface above channel region during SC process, is proposed to restrict the degradations under long-term SC stress.","PeriodicalId":166809,"journal":{"name":"2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131084954","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Characterization of 1.2 kV SiC super-junction SBD implemented by trench and implantation technique 利用沟槽和注入技术实现的1.2 kV SiC超结SBD的表征
2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Pub Date : 2018-05-13 DOI: 10.1109/ISPSD.2018.8393681
Baozhu Wang, Hengyu Wang, Xueqian Zhong, Shu Yang, Qing Guo, Kuang Sheng
{"title":"Characterization of 1.2 kV SiC super-junction SBD implemented by trench and implantation technique","authors":"Baozhu Wang, Hengyu Wang, Xueqian Zhong, Shu Yang, Qing Guo, Kuang Sheng","doi":"10.1109/ISPSD.2018.8393681","DOIUrl":"https://doi.org/10.1109/ISPSD.2018.8393681","url":null,"abstract":"This paper presents the characterizations of SiC Super-Junction SBD, which can break the theoretical one dimensional limit of the SiC unipolar devices. The Super-Junction structure is implemented by trench and implantation technique. The mesa width of Super-Junction device is a key structure parameter, therefore its impacts on device forward and reverse characteristics are analyzed by measurement and numeric simulations. The temperature dependence of the specific on-resistance (Rsp, on) of this device is measured and compared with that of a conventional SiC SBD. SiC Super-Junction SBD shows a slower increase in Rsp, on with temperature. The switching capability of SiC Super-Junction device is demonstrated for the first time by double pulse tester.","PeriodicalId":166809,"journal":{"name":"2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)","volume":"72 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133858655","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Bidirectional threshold voltage shift and gate leakage in 650 V p-GaN AlGaN/GaN HEMTs: The role of electron-trapping and hole-injection 650 V p-GaN GaN/GaN hemt中双向阈值电压偏移和栅极泄漏:电子俘获和空穴注入的作用
2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Pub Date : 2018-05-13 DOI: 10.1109/ISPSD.2018.8393611
Yuanyuan Shi, Qi Zhou, Qian Cheng, P. Wei, L. Zhu, D. Wei, A. Zhang, Wanjun Chen, Bo Zhang
{"title":"Bidirectional threshold voltage shift and gate leakage in 650 V p-GaN AlGaN/GaN HEMTs: The role of electron-trapping and hole-injection","authors":"Yuanyuan Shi, Qi Zhou, Qian Cheng, P. Wei, L. Zhu, D. Wei, A. Zhang, Wanjun Chen, Bo Zhang","doi":"10.1109/ISPSD.2018.8393611","DOIUrl":"https://doi.org/10.1109/ISPSD.2018.8393611","url":null,"abstract":"The threshold voltage (VTH) instability of a 650 V p-GaN gate AlGaN/GaN HEMTs and its underlying physical mechanism was investigated by forward gate stress. A uniquely bidirectional shift in the VTH with the critical gate voltage Vcritical of 6 V was observed in the device after the static and dynamic gate stress. The temperature- and time-dependent gate leakage current revealed that the occurrence of electron-trapping and hole-injection in sequence with the increasing gate bias responsible for the inhomogeneous shift in VTH. At small positive gate bias (Vg<6V), the positive shift in VTH is induced by electron filling of acceptor-like traps in AlGaN barrier, while the gate leakage is accordingly dominated by trap-dominated SCLC. At large positive gate bias (VG>6V), the hole-injection is triggered that results in a negative shift in VTH and the gate leakage exhibits a substantial increase due to the forward turn on of the gate pn junction. Besides, the effective hole-injection also leads to a significant increase in OFF-state drain leakage, which is believed to be the pronounced electron-hole recombination in the channel.","PeriodicalId":166809,"journal":{"name":"2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133449792","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 34
Investigation on total-ionizing-dose radiation response for high voltage ultra-thin layer SOI LDMOS 高压超薄层SOI LDMOS总电离剂量辐射响应研究
2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Pub Date : 2018-05-13 DOI: 10.1109/ISPSD.2018.8393603
Xin Zhou, Ling Zhang, M. Qiao, Zhangyi’an Yuan, Ping Luo, Lei Shu, Zhaoji Li, Bo Zhang
{"title":"Investigation on total-ionizing-dose radiation response for high voltage ultra-thin layer SOI LDMOS","authors":"Xin Zhou, Ling Zhang, M. Qiao, Zhangyi’an Yuan, Ping Luo, Lei Shu, Zhaoji Li, Bo Zhang","doi":"10.1109/ISPSD.2018.8393603","DOIUrl":"https://doi.org/10.1109/ISPSD.2018.8393603","url":null,"abstract":"Total-ionizing-dose radiation response for 600V ultra-thin layer SOI LDMOS transistor is investigated. Radiation conduction modulation model is proposed to reveal the degradation mechanism of conduction current and breakdown voltage. Multi-interface irradiation damage cause positive net trapped charge, which reduces on-resistance equivalently and enhance conduction current. Meanwhile, they suppress the depletion in the drift region at off-state and then decrease breakdown voltage. Based on the model, irradiation induced net trapped charge density are extracted to evaluate the irradiation damage in drift region.","PeriodicalId":166809,"journal":{"name":"2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)","volume":"576 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124216236","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
Surge current failure mechanisms in 4H-SiC JBS rectifiers 4H-SiC JBS整流器的浪涌电流失效机理
2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Pub Date : 2018-05-13 DOI: 10.1109/ISPSD.2018.8393691
E. van Brunt, Thomas Barbieri, A. Barkley, Jim Solovey, J. Richmond, B. Hull
{"title":"Surge current failure mechanisms in 4H-SiC JBS rectifiers","authors":"E. van Brunt, Thomas Barbieri, A. Barkley, Jim Solovey, J. Richmond, B. Hull","doi":"10.1109/ISPSD.2018.8393691","DOIUrl":"https://doi.org/10.1109/ISPSD.2018.8393691","url":null,"abstract":"4H-SÍC Junction Barrier Schottky (JBS) rectifiers can operate in both a purely unipolar mode during normal operation, and a bipolar mode during surge conditions. The transition between operation modes is not only a function of the static device physics, but also the dynamic heating that occurs during a surge transient. For long surge transients on the order of 1ms, heat diffusion into the package allows for 4H-SiC JBS diodes to absorb up to an order of magnitude more energy than surge transients that occur in the 10 μβ time scale. Data from surge operation of 4H-SiC diodes at varying time scales was used to map surge currents to an allowed operation space.","PeriodicalId":166809,"journal":{"name":"2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124879879","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Low noise superjunction MOSFET with integrated snubber structure 集成缓冲结构的低噪声超结MOSFET
2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Pub Date : 2018-05-13 DOI: 10.1109/ISPSD.2018.8393595
Hiroaki Yamashita, S. Ono, H. Ichijo, M. Tsuji, T. Yasuzumi, M. Izumisawa, W. Saito
{"title":"Low noise superjunction MOSFET with integrated snubber structure","authors":"Hiroaki Yamashita, S. Ono, H. Ichijo, M. Tsuji, T. Yasuzumi, M. Izumisawa, W. Saito","doi":"10.1109/ISPSD.2018.8393595","DOIUrl":"https://doi.org/10.1109/ISPSD.2018.8393595","url":null,"abstract":"Novel superjunction (SJ)-MOSFET structure with distributed internal snubber area is proposed. RC network composed by gate electrode, oxide and P-type pillar provides frequency-dependent capacitive coupling between each terminal. The snubber area acts as gate-drain capacitance (Cgd) only at high-frequency band. Switching noise generated during turn-off transient is absorbed by the snubber without increasing switching loss. We verified the concept by simulation and experiments, and confirmed better trade-off between EMI (Electromagnetic interference) and efficiency.","PeriodicalId":166809,"journal":{"name":"2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)","volume":"06 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129298337","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Silicon, GaN and SiC: There's room for all: An application space overview of device considerations 硅，GaN和SiC:有足够的空间:器件考虑的应用空间概述
2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Pub Date : 2018-05-13 DOI: 10.1109/ISPSD.2018.8393590
L. Spaziani, Lucas Lu
{"title":"Silicon, GaN and SiC: There's room for all: An application space overview of device considerations","authors":"L. Spaziani, Lucas Lu","doi":"10.1109/ISPSD.2018.8393590","DOIUrl":"https://doi.org/10.1109/ISPSD.2018.8393590","url":null,"abstract":"The discrete power device marketplace is estimated between 15 and 22 billion dollars and is comprised primarily of transistors and diodes in a variety of voltage, current, packaging and power ratings. It is an area of intense focus as new technologies such as wide bandgap emerge and new applications such as electric vehicles emerge. Decision makers from Engineers to CEO's are faced with the same decisions they have always faced, comparing power, efficiency and size, yet the decisions are more difficult given the fast-moving pace of these emerging technologies. In this paper, several application spaces ranging from consumer to vehicle to motors will be reviewed, comparing the most critical aspects of the applications against semiconductor choices these decision makes have available. Considerations of the appropriate technologies will be reviewed comparing where the technologies have been, are today, and where they will be in the next 5 years.","PeriodicalId":166809,"journal":{"name":"2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130840448","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 40
A comparison of close-cell, stripe-cell, and orthogonal-cell low voltage superjunction trench power MOSFETs for linear mode application 线性模式应用的闭合单元、条纹单元和正交单元低压超结沟槽功率mosfet之比较
2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Pub Date : 2018-05-01 DOI: 10.1109/ISPSD.2018.8393669
Yi Su, M. Bobde, Sik Lui, H. Chang, Qinhai Jin, Lei Zhang
{"title":"A comparison of close-cell, stripe-cell, and orthogonal-cell low voltage superjunction trench power MOSFETs for linear mode application","authors":"Yi Su, M. Bobde, Sik Lui, H. Chang, Qinhai Jin, Lei Zhang","doi":"10.1109/ISPSD.2018.8393669","DOIUrl":"https://doi.org/10.1109/ISPSD.2018.8393669","url":null,"abstract":"Trade-offs between the On Resistance and Linear Mode performance have been compared for different Low Voltage superjunction cell structures, including stripe-cell, closed-cell & orthogonal-cell. The closed-cell has measured RSP of 4.4mΩ·mm2, which is 20% lower than that of the stripe-cell for the same die size and same pitch at the same package. Despite higher trans-conductance, the closed-cell linear mode performance is the same as that of the stripe-cell. The orthogonal-cell has the best linear mode performance, but has high Rds(on) due to current conduction path partially blocked by p-type superjunction column. The tested maximum load current is 38.4A at a drain voltage Vds of 10V and turn-on time of 10 mSec from the orthogonal-cell, which is the highest among the competitors' parts for a power 5×6 clip package. The Rds(on) for orthogonal-cell can be further improved by device optimization.","PeriodicalId":166809,"journal":{"name":"2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)","volume":"219 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115665195","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Temperature dependence of the on-state voltage drop in field-stop IGBTs 场阻igbt导通电压降的温度依赖性
2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Pub Date : 2018-05-01 DOI: 10.1109/ISPSD.2018.8393623
L. Maresca, M. Riccio, G. Breglio, A. Irace, P. Mirone, C. Sanfilippo, Luigi Merlin
{"title":"Temperature dependence of the on-state voltage drop in field-stop IGBTs","authors":"L. Maresca, M. Riccio, G. Breglio, A. Irace, P. Mirone, C. Sanfilippo, Luigi Merlin","doi":"10.1109/ISPSD.2018.8393623","DOIUrl":"https://doi.org/10.1109/ISPSD.2018.8393623","url":null,"abstract":"Insulated Gate Bipolar Transistor (IGBT) is the reference design for power semiconductor switches in the range of the medium-high power applications. Different designs were proposed along the development story of this device, but the actual trend is leaded by the Field-Stop IGBT (FS-IGBT) concept. One of the main advantages of this design is the great accuracy in defining the Emitter injection efficiency of the vertical PNP. However a careful design of the Collector side has to be carried out to avoid unwanted effects such as a negative temperature coefficient for the Von of the device. In this work we present the two main cause of the aforementioned effect, with a detailed analysis of the effect of the arising of a Schottky Barrier (SB) at the Collector contact for low doping concentrations.","PeriodicalId":166809,"journal":{"name":"2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)","volume":"19 8","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114124969","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Design of LED driver ICs for high-performance miniaturized lighting systems 用于高性能小型化照明系统的LED驱动ic设计
2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Pub Date : 2018-05-01 DOI: 10.1109/ISPSD.2018.8393714
Yuan Gao, Lisong Li, P. Mok
{"title":"Design of LED driver ICs for high-performance miniaturized lighting systems","authors":"Yuan Gao, Lisong Li, P. Mok","doi":"10.1109/ISPSD.2018.8393714","DOIUrl":"https://doi.org/10.1109/ISPSD.2018.8393714","url":null,"abstract":"This paper presents several high-performance LED driver ICs for AC-powered miniaturized lighting systems. With the help of presented techniques, the value of bulky inductors can be effectively reduced for the switching-converter-based LED drivers, while the flicker reduction and visible-light communication can be integrated into the compact inductor-less drivers. In addition, a hybrid driver with improved efficiency is achieved by combing two conventional driving approaches.","PeriodicalId":166809,"journal":{"name":"2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126416378","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
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