场阻igbt导通电压降的温度依赖性

2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Pub Date : 2018-05-01 DOI:10.1109/ISPSD.2018.8393623

L. Maresca, M. Riccio, G. Breglio, A. Irace, P. Mirone, C. Sanfilippo, Luigi Merlin

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引用次数: 3

摘要

绝缘栅双极晶体管(IGBT)是中大功率应用范围内功率半导体开关的参考设计。在该器件的发展过程中，提出了不同的设计方案，但实际趋势是由场停止IGBT (FS-IGBT)概念主导。该设计的主要优点之一是在确定垂直PNP的射极喷射效率方面具有很高的准确性。然而，收集器侧的仔细设计必须进行，以避免不必要的影响，如负温度系数的器件的冯。在这项工作中，我们提出了上述效应的两个主要原因，并详细分析了低掺杂浓度下收集器接触处肖特基势垒(SB)产生的影响。

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Temperature dependence of the on-state voltage drop in field-stop IGBTs

Insulated Gate Bipolar Transistor (IGBT) is the reference design for power semiconductor switches in the range of the medium-high power applications. Different designs were proposed along the development story of this device, but the actual trend is leaded by the Field-Stop IGBT (FS-IGBT) concept. One of the main advantages of this design is the great accuracy in defining the Emitter injection efficiency of the vertical PNP. However a careful design of the Collector side has to be carried out to avoid unwanted effects such as a negative temperature coefficient for the Von of the device. In this work we present the two main cause of the aforementioned effect, with a detailed analysis of the effect of the arising of a Schottky Barrier (SB) at the Collector contact for low doping concentrations.

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2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

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