利用沟槽和注入技术实现的1.2 kV SiC超结SBD的表征

2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Pub Date : 2018-05-13 DOI:10.1109/ISPSD.2018.8393681

Baozhu Wang, Hengyu Wang, Xueqian Zhong, Shu Yang, Qing Guo, Kuang Sheng

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引用次数: 9

摘要

本文介绍了SiC超结SBD的特性，它可以突破SiC单极器件的一维极限。采用沟槽和注入技术实现了超结结构。平台宽度是超结器件的关键结构参数，通过测量和数值仿真分析了平台宽度对器件正向和反向特性的影响。测量了该器件的比导通电阻(Rsp, on)的温度依赖性，并与传统的SiC SBD进行了比较。SiC超级结SBD随温度的升高，Rsp的增加速度较慢。通过双脉冲测试，首次验证了SiC超结器件的开关性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Characterization of 1.2 kV SiC super-junction SBD implemented by trench and implantation technique

This paper presents the characterizations of SiC Super-Junction SBD, which can break the theoretical one dimensional limit of the SiC unipolar devices. The Super-Junction structure is implemented by trench and implantation technique. The mesa width of Super-Junction device is a key structure parameter, therefore its impacts on device forward and reverse characteristics are analyzed by measurement and numeric simulations. The temperature dependence of the specific on-resistance (Rsp, on) of this device is measured and compared with that of a conventional SiC SBD. SiC Super-Junction SBD shows a slower increase in Rsp, on with temperature. The switching capability of SiC Super-Junction device is demonstrated for the first time by double pulse tester.

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来源期刊

2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

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