{"title":"利用沟槽和注入技术实现的1.2 kV SiC超结SBD的表征","authors":"Baozhu Wang, Hengyu Wang, Xueqian Zhong, Shu Yang, Qing Guo, Kuang Sheng","doi":"10.1109/ISPSD.2018.8393681","DOIUrl":null,"url":null,"abstract":"This paper presents the characterizations of SiC Super-Junction SBD, which can break the theoretical one dimensional limit of the SiC unipolar devices. The Super-Junction structure is implemented by trench and implantation technique. The mesa width of Super-Junction device is a key structure parameter, therefore its impacts on device forward and reverse characteristics are analyzed by measurement and numeric simulations. The temperature dependence of the specific on-resistance (Rsp, on) of this device is measured and compared with that of a conventional SiC SBD. SiC Super-Junction SBD shows a slower increase in Rsp, on with temperature. The switching capability of SiC Super-Junction device is demonstrated for the first time by double pulse tester.","PeriodicalId":166809,"journal":{"name":"2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)","volume":"72 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":"{\"title\":\"Characterization of 1.2 kV SiC super-junction SBD implemented by trench and implantation technique\",\"authors\":\"Baozhu Wang, Hengyu Wang, Xueqian Zhong, Shu Yang, Qing Guo, Kuang Sheng\",\"doi\":\"10.1109/ISPSD.2018.8393681\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents the characterizations of SiC Super-Junction SBD, which can break the theoretical one dimensional limit of the SiC unipolar devices. The Super-Junction structure is implemented by trench and implantation technique. The mesa width of Super-Junction device is a key structure parameter, therefore its impacts on device forward and reverse characteristics are analyzed by measurement and numeric simulations. The temperature dependence of the specific on-resistance (Rsp, on) of this device is measured and compared with that of a conventional SiC SBD. SiC Super-Junction SBD shows a slower increase in Rsp, on with temperature. The switching capability of SiC Super-Junction device is demonstrated for the first time by double pulse tester.\",\"PeriodicalId\":166809,\"journal\":{\"name\":\"2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)\",\"volume\":\"72 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-05-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD.2018.8393681\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.2018.8393681","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Characterization of 1.2 kV SiC super-junction SBD implemented by trench and implantation technique
This paper presents the characterizations of SiC Super-Junction SBD, which can break the theoretical one dimensional limit of the SiC unipolar devices. The Super-Junction structure is implemented by trench and implantation technique. The mesa width of Super-Junction device is a key structure parameter, therefore its impacts on device forward and reverse characteristics are analyzed by measurement and numeric simulations. The temperature dependence of the specific on-resistance (Rsp, on) of this device is measured and compared with that of a conventional SiC SBD. SiC Super-Junction SBD shows a slower increase in Rsp, on with temperature. The switching capability of SiC Super-Junction device is demonstrated for the first time by double pulse tester.