2017 Iranian Conference on Electrical Engineering (ICEE)最新文献

Design and simulation of a 3rd-order Discrete-Time Time-Interleaved delta-sigma modulator with shared integrators between two paths 两路共享积分器的三阶离散时间交错δ - σ调制器的设计与仿真

2017 Iranian Conference on Electrical Engineering (ICEE) Pub Date : 2017-07-20 DOI: 10.1109/IRANIANCEE.2017.7985431

J. Talebzadeh, I. Kale

引用次数: 3

A distributed joint sentiment and topic modeling using Spark for big opinion mining 基于Spark的大意见挖掘的分布式联合情感和主题建模

2017 Iranian Conference on Electrical Engineering (ICEE) Pub Date : 2017-07-20 DOI: 10.1109/IRANIANCEE.2017.7985276

Esmaeil Zahedi, Zahra Baniasadi, M. Saraee

引用次数: 3

A family of LDPC codes for Binary Symmetric Channel with optimized rate 二进制对称信道的LDPC码族

2017 Iranian Conference on Electrical Engineering (ICEE) Pub Date : 2017-05-02 DOI: 10.1109/IRANIANCEE.2017.7985338

H. Tavakoli

引用次数: 2

Algebraic solution of source location estimation using TDOA and AOA measurements 利用TDOA和AOA测量估计源位置的代数解

2017 Iranian Conference on Electrical Engineering (ICEE) Pub Date : 2017-05-02 DOI: 10.1109/IRANIANCEE.2017.7985303

A. Noroozi, M. Sebt

引用次数: 3

A study of phase noise in MPRO MPRO中相位噪声的研究

2017 Iranian Conference on Electrical Engineering (ICEE) Pub Date : 2017-05-02 DOI: 10.1109/IRANIANCEE.2017.7985097

Sajjad Parvin, A. Tofangdarzade

引用次数: 0

Analysis and simulation of hybrid electric vehicles for sedan vehicle 轿车用混合动力汽车分析与仿真

2017 Iranian Conference on Electrical Engineering (ICEE) Pub Date : 2017-05-02 DOI: 10.1109/IRANIANCEE.2017.7985263

Araz Saleki, Saman Rezazade, Mahmudreza Changizian

引用次数: 19

Designing a new high performance 3-axis MEMS capacitive accelerometer 设计一种新型高性能三轴MEMS电容式加速度计

2017 Iranian Conference on Electrical Engineering (ICEE) Pub Date : 2017-05-02 DOI: 10.1109/IRANIANCEE.2017.7985093

H. Tavakoli, H. G. Momen, E. Sani

引用次数: 7

Design and manufacture of field-effect transistor based on reduced graphene oxide (RGO-FETs) 基于还原氧化石墨烯场效应晶体管(rgo - fet)的设计与制造

2017 Iranian Conference on Electrical Engineering (ICEE) Pub Date : 2017-05-02 DOI: 10.1109/IRANIANCEE.2017.7985492

S. Masoumi, H. Hajghasem, A. Erfanian, A. Molaei, Mahdi Rajipour

{"title":"Design and manufacture of field-effect transistor based on reduced graphene oxide (RGO-FETs)","authors":"S. Masoumi, H. Hajghasem, A. Erfanian, A. Molaei, Mahdi Rajipour","doi":"10.1109/IRANIANCEE.2017.7985492","DOIUrl":"https://doi.org/10.1109/IRANIANCEE.2017.7985492","url":null,"abstract":"Field-effect transistors with graphene (GFETs) as the conducting channels are under investigation as promising chemical and biological sensors. In order for graphene to fulfill this promise and become a material for the large-scale manufacture of high-performance electronics, large-area, high-quality graphene on substrates amenable to electrical device operation and sensors fabrication is needed. So the purpose of this paper is to provide in detail how reduced graphene oxide suspension (100 µ g RGO/ 1ml NMP) was developed, and functionalized the back gate FETs. Following an introduction, we report a solution-based method that allows uniform and controllable deposition of reduced graphene oxide thin films ranging from a single monolayer to several layers in thicknesses between the electrodes in FET. The Raman spectrum of graphene consists of a number of peaks which are well characterized and understood. Electrical transfer property tests revealed that both of the two FETs exhibit V-shaped ambipolar field effect behavior from p-type region to n-type region. This research investigared the preparation of back gate field effect transistor with reduced graphene oxide via a low-cost manufacturing method. The reasults suggest that our method is fast, facile, and substrate independent.","PeriodicalId":161929,"journal":{"name":"2017 Iranian Conference on Electrical Engineering (ICEE)","volume":"84 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126221817","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A ka-band phase shifter based on a new four-state MEMS switch 基于新型四态MEMS开关的ka波段移相器

2017 Iranian Conference on Electrical Engineering (ICEE) Pub Date : 2017-05-02 DOI: 10.1109/IRANIANCEE.2017.7985099

Saeed Akbari, Mostafa Amirpour, E. Sani, M. Azarmanesh, sina akbari

引用次数: 2

Area and performance evaluation of central DMA controller in Xilinx embedded FPGA designs Xilinx嵌入式FPGA设计中中央DMA控制器的面积和性能评估

2017 Iranian Conference on Electrical Engineering (ICEE) Pub Date : 2017-05-02 DOI: 10.1109/IRANIANCEE.2017.7985100

F. Shanehsazzadeh, Mohammad S. Sadri

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引用次数: 5