发布求助
文献互助 智能选刊 最新文献

ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics最新文献

筛选
英文 中文
Electrical and mechanical properties of core-shell type structures in doped BaTiO/sub 3/ 掺BaTiO/ sub3 /中核壳型结构的电学和力学性能
ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics Pub Date : 1996-08-18 DOI: 10.1109/ISAF.1996.598168
R. Buchanan, R. Roseman, K.R. Eufinger
{"title":"Electrical and mechanical properties of core-shell type structures in doped BaTiO/sub 3/","authors":"R. Buchanan, R. Roseman, K.R. Eufinger","doi":"10.1109/ISAF.1996.598168","DOIUrl":"https://doi.org/10.1109/ISAF.1996.598168","url":null,"abstract":"Ferroelectric, core-shell type structures consisting of grains having a diffuse shell and a well defined ferroelectric core, have been developed. These materials were processed in such a way as to: (1) yield a gradient in dopant concentration through each grain, generating either a highly doped shell with a virtually dopant free core, or a uniformly modified grain interior; or, (2) generate a core-shell material, with a gradient from dielectric to semiconductor behavior through the material thickness. These type microstructures, derived from controlled isovalent (ZrO/sub 2/) and/or aliovalent (Y/sub 2/O/sub 3/, Nd/sub 2/O/sub 3/) doping of the base BaTiO/sub 3/ material, were investigated for use as sensors, high strain response materials and high permittivity capacitors. Characteristic of these materials is a stress gradient in the grain, controlled by dopant inhomogeneity, creating a clamping of either the dielectric, resistance or piezoelectric properties.","PeriodicalId":14772,"journal":{"name":"ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics","volume":"29 1","pages":"887-890 vol.2"},"PeriodicalIF":0.0,"publicationDate":"1996-08-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75148930","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Characterization of the linear and non-linear dynamic performance of RAINBOW actuator RAINBOW作动器线性和非线性动态性能的表征
ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics Pub Date : 1996-08-18 DOI: 10.1109/ISAF.1996.598131
S. Chandran, V. Kugel, L. E. Cross
{"title":"Characterization of the linear and non-linear dynamic performance of RAINBOW actuator","authors":"S. Chandran, V. Kugel, L. E. Cross","doi":"10.1109/ISAF.1996.598131","DOIUrl":"https://doi.org/10.1109/ISAF.1996.598131","url":null,"abstract":"In the last few years the technology of using piezoelectric actuators for applications requiring large displacements such as loudspeakers and noise-cancelling devices has undergone significant development. RAINBOW (Reduced and INternally Biased Wafer) is a novel high displacement actuator and knowledge of its dynamic response is indeed essential for these applications. In an attempt to characterize the RAINBOW, measurements were made of important lumped mechanical and electrical parameters. Cantilevers of different dimensions were cut from RAINBOW discs. The data include measurements of the mechanical displacement (under both quasistatic conditions and electromechanical resonance), hysteresis, mechanical quality factor and the electrical impedance of RAINBOW cantilevers. These measurements demonstrate the macroscopic effects of the sinusoidal applied electric field and indicate significant non-linearities in the RAINBOW device.","PeriodicalId":14772,"journal":{"name":"ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics","volume":"227 1","pages":"743-746 vol.2"},"PeriodicalIF":0.0,"publicationDate":"1996-08-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75783225","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
Ferroelectric nonvolatile memory technology with bismuth layer-structured ferroelectric materials 铋层结构铁电材料的铁电非易失性存储技术
ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics Pub Date : 1996-08-18 DOI: 10.1109/ISAF.1996.602702
K. Arita, Y. Shimada, Y. Uemoto, S. Hayashi, M. Azuma, Y. Judai, T. Sumi, E. Fujii, T. Otsuki, L. Mcmillan, C. D. de Araujo
{"title":"Ferroelectric nonvolatile memory technology with bismuth layer-structured ferroelectric materials","authors":"K. Arita, Y. Shimada, Y. Uemoto, S. Hayashi, M. Azuma, Y. Judai, T. Sumi, E. Fujii, T. Otsuki, L. Mcmillan, C. D. de Araujo","doi":"10.1109/ISAF.1996.602702","DOIUrl":"https://doi.org/10.1109/ISAF.1996.602702","url":null,"abstract":"Ferroelectric nonvolatile memory (FeRAM) technology using thin films of a bismuth layer-structured ferroelectric material (also known as \"Y-1\") is presented. The exemplified Y-1 FeRAM exhibits excellent characteristics with regard to data transfer rate, operating voltages, etc., which cannot be achieved by other nonvolatile memories such as EEPROMs and FLASH. Preparation and characterization of Y-1 capacitors are also described, which reveal Y-1 seems to be a promising candidate for FeRAM applications because of its fatigue-free behaviour.","PeriodicalId":14772,"journal":{"name":"ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics","volume":"15 1","pages":"13-16 vol.1"},"PeriodicalIF":0.0,"publicationDate":"1996-08-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74563128","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Ferroelectric ceramics in the Bi(Zn/sub 1/2/Zr/sub 1/2/)O/sub 3/-PbTiO/sub 3/ system Bi(Zn/sub 1/2/Zr/sub 1/2/)O/sub 3/-PbTiO/sub 3/体系中的铁电陶瓷
ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics Pub Date : 1996-08-18 DOI: 10.1109/ISAF.1996.598170
S. Gridnev, S. Ostapenko
{"title":"Ferroelectric ceramics in the Bi(Zn/sub 1/2/Zr/sub 1/2/)O/sub 3/-PbTiO/sub 3/ system","authors":"S. Gridnev, S. Ostapenko","doi":"10.1109/ISAF.1996.598170","DOIUrl":"https://doi.org/10.1109/ISAF.1996.598170","url":null,"abstract":"The dielectric, piezoelectric, mechanical properties, and structure of the complex perovskite ceramics in the Bi(Zn/sub 1/2/Zr/sub 1/2/)O/sub 3/-PbTiO/sub 3/ system have been measured in the temperature range from 283 K to 900 K with the intention of utilizing them in electromechanical transducer applications. The effect of complex PbLi/sub 1/4/Sb/sub 3/4/O/sub 3/ (PLS) modifications on the mechanical quality factor and piezoelectric properties was investigated for several xBZZ-(1-x)PT compositions. Additions of PLS resulted in gradual lowering of mechanical quality factor. All the properties allow them to be used in broadband electroacoustic transducers, accelerometers, and vibration pickups operating over a wide temperature range.","PeriodicalId":14772,"journal":{"name":"ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics","volume":"161 1","pages":"895-898 vol.2"},"PeriodicalIF":0.0,"publicationDate":"1996-08-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77908874","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Temperature-frequency dependence of electrostrictive properties of a polyurethane elastomer 聚氨酯弹性体电伸缩性能的温度-频率依赖性
ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics Pub Date : 1996-08-18 DOI: 10.1109/ISAF.1996.598178
J. Su, C. Kim, V. Kugel, Q.M. Zhang, R. Ting, R. Capps
{"title":"Temperature-frequency dependence of electrostrictive properties of a polyurethane elastomer","authors":"J. Su, C. Kim, V. Kugel, Q.M. Zhang, R. Ting, R. Capps","doi":"10.1109/ISAF.1996.598178","DOIUrl":"https://doi.org/10.1109/ISAF.1996.598178","url":null,"abstract":"It was discovered recently that a large electric-field-induced strain can be obtained in several polyurethane elastomers which show promises for the applications in the transducers and actuators. In this study, electrostrictive properties of a polyurethane elastomer were investigated systematically. The elastic, dielectric and DSC spectroscopy analysis indicated the existence of two transition processes in the polyurethane from -50/spl deg/C to 80/spl deg/C. The field-induced strain coefficients exhibited large increases at the transition regions, indicating that the transition processes have a significant effect on the field-induced strain response. From the elastic and dielectric constant data, the contribution of uniform Maxwell stress was calculated, It was found that the contribution of the Maxwell stress effect to the measured strain coefficient increased from about 10% below the glass transition temperature, T/sub g/, (/spl sim/-25/spl deg/C) to about 50% and 35% for the frequencies of 10 Hz and 100 Hz, respectively, at /spl sim/40/spl deg/C, which is above T/sub g/. The difference between the measured strain response and the calculated Maxwell stress effect indicates a significant contribution from other mechanisms such as electrostriction.","PeriodicalId":14772,"journal":{"name":"ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics","volume":"63 1","pages":"927-930 vol.2"},"PeriodicalIF":0.0,"publicationDate":"1996-08-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80510725","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Preparation and properties of Bi/sub 4/Ti/sub 3/O/sub 12/ thin films by electron cyclotron resonance sputtering 电子回旋共振溅射制备Bi/sub - 4/Ti/sub - 3/O/sub - 12/薄膜及其性能
ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics Pub Date : 1996-08-18 DOI: 10.1109/ISAF.1996.602787
H. Maiwa, N. Ichinose
{"title":"Preparation and properties of Bi/sub 4/Ti/sub 3/O/sub 12/ thin films by electron cyclotron resonance sputtering","authors":"H. Maiwa, N. Ichinose","doi":"10.1109/ISAF.1996.602787","DOIUrl":"https://doi.org/10.1109/ISAF.1996.602787","url":null,"abstract":"Thin films of ferroelectric Bi/sub 4/Ti/sub 3/O/sub 12/ were deposited on Pt- or Ir-coated oxidized Si substrate by electron cyclotron resonance (ECR) sputtering using ceramic targets. Crystal structure and dielectric properties of the films were investigated as functions of sputtering conditions such as substrate temperature, sputtering gas pressure and used substrate. Using a target with excess Bi content compared to stoichiometric composition was required to compensate Bi re-evaporation from the substrate and to obtain a perovskite single phase at 600/spl deg/C. (117)-oriented films exhibited ferroelectric hysteresis loops. The remanent polarization and coercive field of the Bi/sub 4/Ti/sub 3/O/sub 12/ films on Pt/SiO/sub 2//Si were 10.9 /spl mu/C/cm/sup 2/ and 139 kV/cm, respectively. Those of the films on Ir/SiO/sub 2//Si were 3.6 /spl mu/C/cm/sup 2/ and 99 kV/cm, respectively.","PeriodicalId":14772,"journal":{"name":"ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics","volume":"9 1","pages":"455-458 vol.1"},"PeriodicalIF":0.0,"publicationDate":"1996-08-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81877760","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effects of ZrO/sub 2/ spheroids in PZT on piezoelectric properties 压电陶瓷中ZrO/ sub2 /球体对压电性能的影响
ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics Pub Date : 1996-08-18 DOI: 10.1109/ISAF.1996.598179
S. Sugihara, M. Fujita
{"title":"Effects of ZrO/sub 2/ spheroids in PZT on piezoelectric properties","authors":"S. Sugihara, M. Fujita","doi":"10.1109/ISAF.1996.598179","DOIUrl":"https://doi.org/10.1109/ISAF.1996.598179","url":null,"abstract":"The zirconia (YTZ) spheroids were mixed with Pb(Zr,Ti)O/sub 3/, where the system forms the diphasic compound in the different sense of porous PZT. The diameter of spheroid was 0.3 mm and the amount of 2, 5, 10, 20 and 30 mol% were examined in the system. The relative permittivity reduced increasing the amount of spheroids which existed in the matrix of Pb(Zr,T)O/sub 3/ without chemical reaction. The depolarizing factor increased in the steeper slope in the porosity more than 0.14. Moreover, the frequency dependences of impedance were also discussed and the microstructure and strain were reported as well.","PeriodicalId":14772,"journal":{"name":"ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics","volume":"19 1","pages":"931-934 vol.2"},"PeriodicalIF":0.0,"publicationDate":"1996-08-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86037414","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Structural and ferroelectric properties of r.f. magnetron sputtered SrBi/sub 2/Ta/sub 2/O/sub 9/ thin films 射频磁控溅射SrBi/sub 2/Ta/sub 2/O/sub 9/薄膜的结构和铁电性能
ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics Pub Date : 1996-08-18 DOI: 10.1109/ISAF.1996.602792
T. Song, J. Lee, T.S. Kim, H. Jung
{"title":"Structural and ferroelectric properties of r.f. magnetron sputtered SrBi/sub 2/Ta/sub 2/O/sub 9/ thin films","authors":"T. Song, J. Lee, T.S. Kim, H. Jung","doi":"10.1109/ISAF.1996.602792","DOIUrl":"https://doi.org/10.1109/ISAF.1996.602792","url":null,"abstract":"Radio-frequency magnetron sputtering was used to deposit SrBi/sub 2/Ta/sub 2/O/sub 9/ ferroelectric thin films on Pt(111)/Ti/SiO/sub 2//Si(100) substrates with 15% Bi/sub 2/O/sub 3/ excess SrBi/sub 2/Ta/sub 2/O/sub 9/ ceramic target. Thin films were deposited at room temperature with argon pressures of 0.5/spl sim/100 mTorr and sputtering power of 200 W. Deposited thin films were post-annealed at 800/spl deg/C for 2 hours in O/sub 2/ atmosphere. Structural properties were investigated with X-ray diffraction techniques. And microstructures were observed by the scanning electron microscope. Crystal orientations and microstructures of the thin films were strongly affected by the argon pressures during the deposition. Ferroelectric properties of the Pt/SrBi/sub 2/Ta/sub 2/O/sub 9//Pt capacitors were obtained. The physical properties of the c-axis oriented and polycrystalline SrBi/sub 2/Ta/sub 2/O/sub 9/ were compared. The c-axis oriented thin films show good ferroelectric properties, (P*/sub r/-P/sup /spl circ///sub r/) and E/sub c/ were 10.4 /spl mu/C/cm/sup 2/ and 50 kV/cm, respectively. And for the polycrystalline thin film, (P*/sub r/-P/sup /spl circ///sub r/) and E/sub c/ were 6.5 /spl mu/C/cm/sup 2/ and 43 kV/cm, respectively.","PeriodicalId":14772,"journal":{"name":"ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics","volume":"403 1","pages":"475-478 vol.1"},"PeriodicalIF":0.0,"publicationDate":"1996-08-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78291781","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Resistance degradation of CVD (Ba,Sr)TiO/sub 3/ thin films for DRAMs and integrated decoupling capacitors dram和集成去耦电容器用CVD (Ba,Sr)TiO/sub 3/薄膜的电阻退化
ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics Pub Date : 1996-08-18 DOI: 10.1109/ISAF.1996.602709
C. Basceri, M. Wells, S. Streiffer, A. Kingon, S. Bilodeau, R. Carl, P. Van Buskirk, S. Summerfelt, P. McIntyre
{"title":"Resistance degradation of CVD (Ba,Sr)TiO/sub 3/ thin films for DRAMs and integrated decoupling capacitors","authors":"C. Basceri, M. Wells, S. Streiffer, A. Kingon, S. Bilodeau, R. Carl, P. Van Buskirk, S. Summerfelt, P. McIntyre","doi":"10.1109/ISAF.1996.602709","DOIUrl":"https://doi.org/10.1109/ISAF.1996.602709","url":null,"abstract":"We have investigated the important failure mechanism of resistance degradation for polycrystalline MOCVD (Ba,Sr)TiO/sub 3/ thin films appropriate for use in DRAMs, as a function of voltage (field), thickness and temperature. At constant field, the measured degradation lifetime decreases with increasing film thickness, resulting from a decrease in the activation energy with respect to temperature for thicker films. Similarly, there are clear indications that thicker films are more field sensitive. Predicted resistance degradation lifetimes obtained from both temperature and voltage extrapolations for DRAM operating conditions of 85/spl deg/C and 1.6 V exceed the current benchmark of 10 years for all the films studied.","PeriodicalId":14772,"journal":{"name":"ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics","volume":"40 1","pages":"51-54 vol.1"},"PeriodicalIF":0.0,"publicationDate":"1996-08-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82277171","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Electrical output performance of PZT-based piezoelectric ceramics pz基压电陶瓷的电输出性能
ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics Pub Date : 1996-08-18 DOI: 10.1109/ISAF.1996.598189
C. Xu, M. Akiyama, K. Nonaka, K. Shobu, T. Watanabe
{"title":"Electrical output performance of PZT-based piezoelectric ceramics","authors":"C. Xu, M. Akiyama, K. Nonaka, K. Shobu, T. Watanabe","doi":"10.1109/ISAF.1996.598189","DOIUrl":"https://doi.org/10.1109/ISAF.1996.598189","url":null,"abstract":"The electrical output characteristics of Mn-doped PZT ceramics responding to slow mechanical stress as well as to impact stress have been investigated. Although both the slow and impact stress induce reversible electrical response, their output properties are distinctly different. Slow stress releases two output current flows with opposite directions, responding to the increasing and decreasing parts of the stress respectively. However, impact stress produces almost one direction signal. The output charge and energy produced by slow stress are found to be thousands of times higher than that produced by impact stress. This work shows that the energy conversion efficiency of piezoelectric ceramics strongly depends on the way the stress is applied.","PeriodicalId":14772,"journal":{"name":"ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics","volume":"2 1","pages":"967-970 vol.2"},"PeriodicalIF":0.0,"publicationDate":"1996-08-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78852964","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：481959085
Book学术官方微信