ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics最新文献

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High resolution monochromatic synchrotron X-radiation diffraction imaging of triglycine sulfate (TGS) crystals 硫酸甘油三酯(TGS)晶体的高分辨率单色同步辐射衍射成像
R. Lal, A. K. Batra, B. Steiner, U. Laor
{"title":"High resolution monochromatic synchrotron X-radiation diffraction imaging of triglycine sulfate (TGS) crystals","authors":"R. Lal, A. K. Batra, B. Steiner, U. Laor","doi":"10.1109/ISAF.1996.598090","DOIUrl":"https://doi.org/10.1109/ISAF.1996.598090","url":null,"abstract":"In order to shed light on the principal irregularities found in various optical crystals for infrared detectors, their origins, and their influence on device performance, we have carried out high resolution monochromatic synchrotron X-ray diffraction imaging of triglycine sulfate (TGS) crystals. Images of crystals grown during the First International Microgravity Laboratory (IML-1) flight in 1992 were taken and compared with others of terrestrially-grown crystals. The local acceptance angle for diffraction from the uncut TGS crystal grown on the IML-1 mission was found to be 1-2 arc seconds, indicating extraordinary crystal uniformity. The only inclusions visible in the topographs were polystyrene particles intentionally introduced into the growth solution of the space crystal. No demarcation was seen between the terrestrial seed and the new growth of the crystal grown in space. TGS crystals grown on the ground were found to have edge dislocations near the cleaved surface. The results of the topographic studies of the space- and ground-grown crystals are discussed and their implications identified.","PeriodicalId":14772,"journal":{"name":"ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics","volume":"91 1","pages":"631-634 vol.2"},"PeriodicalIF":0.0,"publicationDate":"1996-08-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84806977","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Characterization of the surface potential of PZT-films for an electrostatic printing process 静电印刷过程中pzt薄膜表面电位的表征
W. Hassler, H. Hulz, J. Edelmann, B. Ploss
{"title":"Characterization of the surface potential of PZT-films for an electrostatic printing process","authors":"W. Hassler, H. Hulz, J. Edelmann, B. Ploss","doi":"10.1109/ISAF.1996.602764","DOIUrl":"https://doi.org/10.1109/ISAF.1996.602764","url":null,"abstract":"The materials investigated in this paper are PZT thick films on polycrystalline Al/sub 2/O/sub 3/-substrates metallized with a Pt-electrode. The uniformly polarized films were locally polarized in the opposite direction with a metallic electrode as well as with an electron beam in the SEM. The surface potential resulting from the latent charge image at the film surface was measured after polarization and after contrast enhancement by corona charging. Furthermore, the potential contrast could be visualized in the SEM at small accelerating voltages and minimal sample currents. The depth profile of the polarization perpendicular to the film surface was measured by the pyroelectric laser intensity modulation method (LIMM). The influence of film inhomogeneities on the surface potential is discussed.","PeriodicalId":14772,"journal":{"name":"ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics","volume":"2 1","pages":"347-350 vol.1"},"PeriodicalIF":0.0,"publicationDate":"1996-08-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85594935","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Behavior of piezoelectric actuators under high electric field 高电场作用下压电致动器的性能
V. Kugel, Q.M. Zhang, Baomin Xu, Qing-ming Wang, S. Chandran, L. E. Cross
{"title":"Behavior of piezoelectric actuators under high electric field","authors":"V. Kugel, Q.M. Zhang, Baomin Xu, Qing-ming Wang, S. Chandran, L. E. Cross","doi":"10.1109/ISAF.1996.598100","DOIUrl":"https://doi.org/10.1109/ISAF.1996.598100","url":null,"abstract":"Behavior of piezoelectric actuators (bimorph, unimorph, RAINBOW, and shear-mode) fabricated from soft ceramics has been investigated in a wide electric field and frequency range. The electrical admittance, mechanical displacement, and blocking force of these transducers have been found to be highly dependent on the magnitude of driving field. The resonant frequency and mechanical quality factor of bending vibrations for all but shear-mode actuators decreases significantly with increasing driving field. Analysis shows that despite a large variation in the quasi-static electrical admittance and reduced tip displacement of bimorph, unimorph, and RAINBOW cantilevers with driving field, their ratio is almost a constant, which characterizes the ratio of dielectric permittivity /spl epsi//sub 33//sup T/ to piezoelectric coefficient d/sub 31/.","PeriodicalId":14772,"journal":{"name":"ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics","volume":"73 1","pages":"655-658 vol.2"},"PeriodicalIF":0.0,"publicationDate":"1996-08-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80054337","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
PVDF/SiO/sub 2/ electronic flexible hybrid composite films PVDF/SiO/ sub2 /电子柔性杂化复合薄膜
D. Yang, W. Bai, Yadong Jiang, Zhiming Wu, Shaohong Wang
{"title":"PVDF/SiO/sub 2/ electronic flexible hybrid composite films","authors":"D. Yang, W. Bai, Yadong Jiang, Zhiming Wu, Shaohong Wang","doi":"10.1109/ISAF.1996.598045","DOIUrl":"https://doi.org/10.1109/ISAF.1996.598045","url":null,"abstract":"A new electronic flexible hybrid composite film in organic-inorganic two-phase system PVDF/SiO/sub 2/ by Sol-Gel process is described. The PVDF/SiO/sub 2/ film preparation and composite techniques, hybrid microstructure, dielectric, piezo- and pyroelectric, charge storage properties, effects, and origin mechanism analysis are discussed.","PeriodicalId":14772,"journal":{"name":"ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics","volume":"67 1","pages":"577-580 vol.2"},"PeriodicalIF":0.0,"publicationDate":"1996-08-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78072059","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Driven structures using piezoelectric coatings 压电涂层驱动结构
R. Noteboom, M. Sayer, D. A. Barrow
{"title":"Driven structures using piezoelectric coatings","authors":"R. Noteboom, M. Sayer, D. A. Barrow","doi":"10.1109/ISAF.1996.598184","DOIUrl":"https://doi.org/10.1109/ISAF.1996.598184","url":null,"abstract":"Flexure mode oscillations in steel membranes at frequencies in the kilohertz range can be induced by piezoelectric coatings. The application of such macroscopic structures in the design of film thickness deposition monitors are demonstrated.","PeriodicalId":14772,"journal":{"name":"ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics","volume":"48 1","pages":"951-954 vol.2"},"PeriodicalIF":0.0,"publicationDate":"1996-08-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78207842","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Sol-gel derived Pb/sub 1-x/Ca/sub x/TiO/sub 3/ thin films 溶胶凝胶法制备Pb/sub - 1-x/Ca/sub -x/ TiO/sub - 3/薄膜
G. Teowee, K. McCarthy, T. Alexander, T. Bukowski, D. Uhlmann
{"title":"Sol-gel derived Pb/sub 1-x/Ca/sub x/TiO/sub 3/ thin films","authors":"G. Teowee, K. McCarthy, T. Alexander, T. Bukowski, D. Uhlmann","doi":"10.1109/ISAF.1996.602795","DOIUrl":"https://doi.org/10.1109/ISAF.1996.602795","url":null,"abstract":"A series of sol-gel derived CaTiO/sub 3/-PbTiO/sub 3/ thin films were prepared on platinized Si substrates and fired to temperatures ranging from 550 C to 650 C. Multiple spincoating, with an intermediate firing of 400 C between coatings, was performed to obtain films up to 0.5 /spl mu/m thick. All the films were single phase perovskite after firing to 600 C. The dielectric constant ranged from 100-300 depending on the amount of Ca. Leakage currents as low as 2&10/sup -9/ A/cm/sup 2/ were obtained in these films.","PeriodicalId":14772,"journal":{"name":"ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics","volume":"65 1","pages":"487-490 vol.1"},"PeriodicalIF":0.0,"publicationDate":"1996-08-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77627440","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Dielectric properties of PZT thin films derived by a chemical solution-deposition process on steel substrates 钢衬底化学溶液沉积法制备PZT薄膜的介电性能
S. Seifert, S. Merklein, S. Wahl, D. Sporn
{"title":"Dielectric properties of PZT thin films derived by a chemical solution-deposition process on steel substrates","authors":"S. Seifert, S. Merklein, S. Wahl, D. Sporn","doi":"10.1109/ISAF.1996.602720","DOIUrl":"https://doi.org/10.1109/ISAF.1996.602720","url":null,"abstract":"PZT (53/47) thin films with a lead excess of up to 30 mol% were prepared by a chemical solution-deposition process on steel substrates, the steel acting both as substrate and electrode. The films were deposited using the doctor blade method and rapid furnace-annealed at 600/spl deg/C. Single layer film thickness was up to 1 /spl mu/m; with repeated deposition procedures overall film thicknesses of about 4 /spl mu/m were obtained. XRD measurements show a perovskite phase formation; no phases due to chemical interactions with the substrate were found. By TEM investigations grain sizes up to 1 /spl mu/m were found, pores of about 50 nm in diameter were detected within the grains. Small signal dielectric measurements showed permittivity values of about 400, independent on film thickness. After postannealing the samples at 700/spl deg/C the permittivity slightly increases. Hysteresis measurements show decreasing coercive field values with increasing film thickness; typical coercivity values are in the range of 10 V//spl mu/m. Polarization values were found to be about 35 /spl mu/C/cm/sup 2/, for postannealed samples a somewhat higher polarization was obtained. A frequency dependence was found by large signal dielectric measurements, resulting in a broadening of the hysteresis loops with decreasing frequency due to conductivity. Fatigue measurements show a decay of the ferroelectric properties after 10/sup 4/ poling cycles.","PeriodicalId":14772,"journal":{"name":"ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics","volume":"70 1","pages":"113-116 vol.1"},"PeriodicalIF":0.0,"publicationDate":"1996-08-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76079377","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Selection of piezoelectric powders for 0-3 piezoceramic-polymer composites 0-3压电陶瓷-聚合物复合材料中压电粉的选择
P. Tan, D. Hall, M. Williams, A. K. Wood
{"title":"Selection of piezoelectric powders for 0-3 piezoceramic-polymer composites","authors":"P. Tan, D. Hall, M. Williams, A. K. Wood","doi":"10.1109/ISAF.1996.602753","DOIUrl":"https://doi.org/10.1109/ISAF.1996.602753","url":null,"abstract":"Previous studies on 0-3 piezoelectric ceramic-polymer composites have emphasised the significance of the resistivity balance between the two constituent phases, in order to facilitate poling of the ferroelectric ceramic particles. Most of these investigations have employed lead titanate-based ceramics, with an inherent high coercive field, which necessitates the use of high fields for poling. The present study evaluates various ceramic powders for use in 0-3 composites, the main aim being to enable the use of lower poling voltages by the identification of suitable low-coercivity materials.","PeriodicalId":14772,"journal":{"name":"ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics","volume":"9 1","pages":"295-298 vol.1"},"PeriodicalIF":0.0,"publicationDate":"1996-08-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73862108","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Improvement in fatigue properties of ferroelectric Bi/sub 4/Ti/sub 3/O/sub 12/ thin films by heat treatment in O/sub 2/ gas at high pressure 在O/sub - 2/气体中高压热处理改善铁电Bi/sub - 4/Ti/sub - 3/O/sub - 12/薄膜的疲劳性能
S. Okamura, Y. Yagi, K. Mori, A. Kakimi, S. Ando, T. Tsukamoto
{"title":"Improvement in fatigue properties of ferroelectric Bi/sub 4/Ti/sub 3/O/sub 12/ thin films by heat treatment in O/sub 2/ gas at high pressure","authors":"S. Okamura, Y. Yagi, K. Mori, A. Kakimi, S. Ando, T. Tsukamoto","doi":"10.1109/ISAF.1996.602789","DOIUrl":"https://doi.org/10.1109/ISAF.1996.602789","url":null,"abstract":"Fabrication of ferroelectric Bi/sub 4/Ti/sub 3/O/sub 12/ thin films was carried out by spin-coating pyrolysis process of metal naphthenates. The films were finally sintered at 800/spl deg/C for 30 min in O/sub 2/ gas with the pressures ranging from 0.1 to 0.4 MPa. In any conditions, ferroelectric Bi/sub 4/Ti/sub 3/O/sub 12/ thin films with complete c-axis orientation were obtained. Remanent polarizations of the films were improved with increasing O/sub 2/ gas pressure in sintering while coercive fields were constant. The Bi/sub 4/Ti/sub 3/O/sub 12/ thin film sintered at the O/sub 2/ gas pressure of 0.4 MPa exhibited good ferroelectric properties: the remanent polarization of 2.1 /spl mu/C/cm/sup 2/ and the coercive field of 66 kV/cm. The remanent polarization of the film sintered at 0.4 MPa was observed to be 95 % of the initial value after the polarization reversal of 1/spl times/10/sup 9/ cycles while that of the film sintered at 0.1 MPa was reduced to about half of the initial one after 1/spl times/10/sup 7/ cycles. Sintering at high O/sub 2/ gas pressure had a great influence on the improvement of fatigue properties of ferroelectric Bi/sub 4/Ti/sub 3/O/sub 12/ thin films.","PeriodicalId":14772,"journal":{"name":"ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics","volume":"72 1","pages":"463-466 vol.1"},"PeriodicalIF":0.0,"publicationDate":"1996-08-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74124494","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
SHG thermal imaging in ferroelectric media 铁电介质中的SHG热成像
G. Liberts, V. Zauls
{"title":"SHG thermal imaging in ferroelectric media","authors":"G. Liberts, V. Zauls","doi":"10.1109/ISAF.1996.598091","DOIUrl":"https://doi.org/10.1109/ISAF.1996.598091","url":null,"abstract":"A method has been developed to determine the temperature distribution of ferroelectric surfaces and volumes. Based on the effect of optical second harmonic generation (SHG) in highly nonlinear ferroelectric coating demonstration of thermosensing has been performed in the wide temperature range (77 K-600 K).","PeriodicalId":14772,"journal":{"name":"ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics","volume":"5 1","pages":"635-638 vol.2"},"PeriodicalIF":0.0,"publicationDate":"1996-08-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78674924","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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