在O/sub - 2/气体中高压热处理改善铁电Bi/sub - 4/Ti/sub - 3/O/sub - 12/薄膜的疲劳性能

ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics Pub Date : 1996-08-18 DOI:10.1109/ISAF.1996.602789

S. Okamura, Y. Yagi, K. Mori, A. Kakimi, S. Ando, T. Tsukamoto

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引用次数: 0

摘要

采用金属环烷酸盐自旋包覆热解法制备了Bi/sub - 4/Ti/sub - 3/O/sub - 12/铁电薄膜。最后在0/ sub / 2/气体中，在800/spl℃下烧结30 min，压力范围为0.1 ~ 0.4 MPa。在任何条件下均可获得具有完整c轴取向的Bi/sub 4/Ti/sub 3/O/sub 12/薄膜。烧结过程中，当矫顽力场一定时，随着O/sub / gas压力的增加，薄膜的剩余极化率有所提高。在0.4 MPa的O/sub 2/气体压力下烧结的Bi/sub 4/Ti/sub 3/O/sub 12/薄膜具有良好的铁电性能:剩余极化强度为2.1 /spl mu/C/cm/sup 2/，矫顽力为66 kV/cm。在0.4 MPa下烧结的膜经过1/spl次/10/sup 9/次极化反转后，其剩余极化值为初始值的95%，而在0.1 MPa下烧结的膜经过1/spl次/10/sup 7/次极化反转后，其剩余极化值降至初始值的一半左右。高O/sub - 2/气压烧结对铁电Bi/sub - 4/Ti/sub - 3/O/sub - 12/薄膜疲劳性能的改善有很大影响。

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Improvement in fatigue properties of ferroelectric Bi/sub 4/Ti/sub 3/O/sub 12/ thin films by heat treatment in O/sub 2/ gas at high pressure

Fabrication of ferroelectric Bi/sub 4/Ti/sub 3/O/sub 12/ thin films was carried out by spin-coating pyrolysis process of metal naphthenates. The films were finally sintered at 800/spl deg/C for 30 min in O/sub 2/ gas with the pressures ranging from 0.1 to 0.4 MPa. In any conditions, ferroelectric Bi/sub 4/Ti/sub 3/O/sub 12/ thin films with complete c-axis orientation were obtained. Remanent polarizations of the films were improved with increasing O/sub 2/ gas pressure in sintering while coercive fields were constant. The Bi/sub 4/Ti/sub 3/O/sub 12/ thin film sintered at the O/sub 2/ gas pressure of 0.4 MPa exhibited good ferroelectric properties: the remanent polarization of 2.1 /spl mu/C/cm/sup 2/ and the coercive field of 66 kV/cm. The remanent polarization of the film sintered at 0.4 MPa was observed to be 95 % of the initial value after the polarization reversal of 1/spl times/10/sup 9/ cycles while that of the film sintered at 0.1 MPa was reduced to about half of the initial one after 1/spl times/10/sup 7/ cycles. Sintering at high O/sub 2/ gas pressure had a great influence on the improvement of fatigue properties of ferroelectric Bi/sub 4/Ti/sub 3/O/sub 12/ thin films.

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ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics

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