铋层结构铁电材料的铁电非易失性存储技术

ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics Pub Date : 1996-08-18 DOI:10.1109/ISAF.1996.602702

K. Arita, Y. Shimada, Y. Uemoto, S. Hayashi, M. Azuma, Y. Judai, T. Sumi, E. Fujii, T. Otsuki, L. Mcmillan, C. D. de Araujo

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引用次数: 6

摘要

提出了利用铋层结构铁电材料(也称为“Y-1”)薄膜的铁电非易失性存储器(FeRAM)技术。所述Y-1 FeRAM在数据传输速率、工作电压等方面表现出优异的特性，这是其他非易失性存储器(如eeprom和FLASH)所无法实现的。Y-1电容器的制备和表征也被描述，这表明Y-1似乎是FeRAM应用的一个有前途的候选者，因为它的无疲劳行为。

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Ferroelectric nonvolatile memory technology with bismuth layer-structured ferroelectric materials

Ferroelectric nonvolatile memory (FeRAM) technology using thin films of a bismuth layer-structured ferroelectric material (also known as "Y-1") is presented. The exemplified Y-1 FeRAM exhibits excellent characteristics with regard to data transfer rate, operating voltages, etc., which cannot be achieved by other nonvolatile memories such as EEPROMs and FLASH. Preparation and characterization of Y-1 capacitors are also described, which reveal Y-1 seems to be a promising candidate for FeRAM applications because of its fatigue-free behaviour.

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ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics

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