{"title":"掺BaTiO/ sub3 /中核壳型结构的电学和力学性能","authors":"R. Buchanan, R. Roseman, K.R. Eufinger","doi":"10.1109/ISAF.1996.598168","DOIUrl":null,"url":null,"abstract":"Ferroelectric, core-shell type structures consisting of grains having a diffuse shell and a well defined ferroelectric core, have been developed. These materials were processed in such a way as to: (1) yield a gradient in dopant concentration through each grain, generating either a highly doped shell with a virtually dopant free core, or a uniformly modified grain interior; or, (2) generate a core-shell material, with a gradient from dielectric to semiconductor behavior through the material thickness. These type microstructures, derived from controlled isovalent (ZrO/sub 2/) and/or aliovalent (Y/sub 2/O/sub 3/, Nd/sub 2/O/sub 3/) doping of the base BaTiO/sub 3/ material, were investigated for use as sensors, high strain response materials and high permittivity capacitors. Characteristic of these materials is a stress gradient in the grain, controlled by dopant inhomogeneity, creating a clamping of either the dielectric, resistance or piezoelectric properties.","PeriodicalId":14772,"journal":{"name":"ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics","volume":"29 1","pages":"887-890 vol.2"},"PeriodicalIF":0.0000,"publicationDate":"1996-08-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Electrical and mechanical properties of core-shell type structures in doped BaTiO/sub 3/\",\"authors\":\"R. Buchanan, R. Roseman, K.R. Eufinger\",\"doi\":\"10.1109/ISAF.1996.598168\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Ferroelectric, core-shell type structures consisting of grains having a diffuse shell and a well defined ferroelectric core, have been developed. These materials were processed in such a way as to: (1) yield a gradient in dopant concentration through each grain, generating either a highly doped shell with a virtually dopant free core, or a uniformly modified grain interior; or, (2) generate a core-shell material, with a gradient from dielectric to semiconductor behavior through the material thickness. These type microstructures, derived from controlled isovalent (ZrO/sub 2/) and/or aliovalent (Y/sub 2/O/sub 3/, Nd/sub 2/O/sub 3/) doping of the base BaTiO/sub 3/ material, were investigated for use as sensors, high strain response materials and high permittivity capacitors. Characteristic of these materials is a stress gradient in the grain, controlled by dopant inhomogeneity, creating a clamping of either the dielectric, resistance or piezoelectric properties.\",\"PeriodicalId\":14772,\"journal\":{\"name\":\"ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics\",\"volume\":\"29 1\",\"pages\":\"887-890 vol.2\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-08-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISAF.1996.598168\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISAF.1996.598168","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Electrical and mechanical properties of core-shell type structures in doped BaTiO/sub 3/
Ferroelectric, core-shell type structures consisting of grains having a diffuse shell and a well defined ferroelectric core, have been developed. These materials were processed in such a way as to: (1) yield a gradient in dopant concentration through each grain, generating either a highly doped shell with a virtually dopant free core, or a uniformly modified grain interior; or, (2) generate a core-shell material, with a gradient from dielectric to semiconductor behavior through the material thickness. These type microstructures, derived from controlled isovalent (ZrO/sub 2/) and/or aliovalent (Y/sub 2/O/sub 3/, Nd/sub 2/O/sub 3/) doping of the base BaTiO/sub 3/ material, were investigated for use as sensors, high strain response materials and high permittivity capacitors. Characteristic of these materials is a stress gradient in the grain, controlled by dopant inhomogeneity, creating a clamping of either the dielectric, resistance or piezoelectric properties.